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The device exhibits an extended cutoff wavelength exceeding 2.4\n                    <jats:italic toggle=\"yes\">\u03bc<\/jats:italic>\n                    m. The responsivity is measured to be 0.14 A\/W at unity gain under illumination from a 2\n                    <jats:italic toggle=\"yes\">\u03bc<\/jats:italic>\n                    m laser. A 3-dB bandwidth of 10.2 GHz is achieved for a 20-\n                    <jats:italic toggle=\"yes\">\u03bc<\/jats:italic>\n                    m diameter device. Furthermore, clear open eye diagrams are demonstrated at data rates up to 15 Gb\/s.\n                  <\/jats:p>","DOI":"10.1364\/oe.600320","type":"journal-article","created":{"date-parts":[[2026,5,22]],"date-time":"2026-05-22T03:00:08Z","timestamp":1779418808000},"page":"23847","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["High-speed InGaAs\/GaAsSb type-II superlattice avalanche photodiodes beyond 2\u2009\u00b5m"],"prefix":"10.1364","volume":"34","author":[{"given":"Wenyang","family":"Wang","sequence":"first","affiliation":[{"name":"ShanghaiTech University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-8061-1769","authenticated-orcid":true,"given":"Yan","family":"Liang","sequence":"additional","affiliation":[{"name":"Nanjing University"},{"name":"Institute of Semiconductors, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rongshu","family":"Guan","sequence":"additional","affiliation":[{"name":"ShanghaiTech University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zihao","family":"Wang","sequence":"additional","affiliation":[{"name":"ShanghaiTech University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yifan","family":"Fan","sequence":"additional","affiliation":[{"name":"ShanghaiTech University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuxuan","family":"Wang","sequence":"additional","affiliation":[{"name":"National Key Laboratory of Solid-State Microwave Devices and Circuits"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8416-4082","authenticated-orcid":true,"given":"Guowei","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0327-0332","authenticated-orcid":true,"given":"Donghai","family":"Wu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yingqiang","family":"Xu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1082-0315","authenticated-orcid":true,"given":"Yi","family":"Shi","sequence":"additional","affiliation":[{"name":"Nanjing University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3265-5787","authenticated-orcid":true,"given":"Baile","family":"Chen","sequence":"additional","affiliation":[{"name":"ShanghaiTech University"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2026,6,18]]},"reference":[{"key":"oe-34-13-23847-R1","doi-asserted-by":"publisher","first-page":"4139","DOI":"10.1038\/s41467-022-31884-2","type":"journal-article","volume":"13","author":"Kong","year":"2022","journal-title":"Nat. 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