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Express"],"published-print":{"date-parts":[[2026,10,5]]},"abstract":"<jats:p>\n                    Photonic integrated circuits require compact broadband passive components. We report an inverse-designed reflector integrated with a high-\n                    <jats:italic toggle=\"yes\">Q<\/jats:italic>\n                    Fabry-P\u00e9rot (F-P) cavity on a standard 220-nm silicon-on-insulator (SOI) platform. The 2\n                    <jats:italic toggle=\"yes\">\u00b5<\/jats:italic>\n                    m\u2009\u00d7\u20092\n                    <jats:italic toggle=\"yes\">\u00b5<\/jats:italic>\n                    m reflector is incorporated into a 400-\n                    <jats:italic toggle=\"yes\">\u00b5<\/jats:italic>\n                    m bus-coupled cavity. The fabricated device exhibits a loaded\n                    <jats:italic toggle=\"yes\">Q<\/jats:italic>\n                    of approximately 1\u2009\u00d7\u200910\n                    <jats:sup>5<\/jats:sup>\n                    and a round-trip-loss-limited effective reflectivity of 0.92\u20130.96 across 1500\u20131600 nm, providing a lower bound on the mirror reflectivity. The design includes a 250-nm minimum-feature constraint and \u00b110 nm lithographic-bias tolerance analysis. These results establish a compact, broadband, and fabrication-aware reflector-cavity building block for wavelength-selective silicon photonic circuits.\n                  <\/jats:p>","DOI":"10.1364\/oe.611221","type":"journal-article","created":{"date-parts":[[2026,9,16]],"date-time":"2026-09-16T05:00:07Z","timestamp":1789534807000},"page":"37844","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["On-chip ultracompact broadband reflector and high-\n                    <i>Q<\/i>\n                    Fabry-P\u00e9rot cavity based on inverse design"],"prefix":"10.1364","volume":"34","author":[{"given":"Liang-chen","family":"Si","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/01rxvg760","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Jiangsu Key Laboratory of Semiconductor Laser and Sensing Technology"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haoran","family":"Qin","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/01rxvg760","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Jiangsu Key Laboratory of Semiconductor Laser and Sensing Technology"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chunyu","family":"Huang","sequence":"additional","affiliation":[{"name":"National Laboratory of Solid-State Microstructures"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yan-qing","family":"Lu","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/01rxvg760","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Nanjing University"},{"name":"National Laboratory of Solid-State Microstructures"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0481-5149","authenticated-orcid":true,"given":"Jun-long","family":"Kou","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/01rxvg760","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Jiangsu Key Laboratory of Semiconductor Laser and Sensing Technology"},{"name":"National Key Laboratory of Transient Impact"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2026,9,28]]},"reference":[{"key":"oe-34-20-37844-R1","doi-asserted-by":"publisher","first-page":"2020","DOI":"10.1021\/acsphotonics.2c01529","type":"journal-article","volume":"10","author":"Su","year":"2023","journal-title":"ACS Photonics"},{"key":"oe-34-20-37844-R2","doi-asserted-by":"publisher","first-page":"4374","DOI":"10.1109\/JLT.2021.3066203","type":"journal-article","volume":"39","author":"Siew","year":"2021","journal-title":"J. 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