{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T18:24:33Z","timestamp":1785435873652,"version":"3.56.0"},"reference-count":30,"publisher":"Optica Publishing Group","issue":"17","license":[{"start":{"date-parts":[[2022,8,25]],"date-time":"2022-08-25T00:00:00Z","timestamp":1661385600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/doi.org\/10.1364\/OA_License_v2#VOR"},{"start":{"date-parts":[[2022,8,25]],"date-time":"2022-08-25T00:00:00Z","timestamp":1661385600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/opg.optica.org\/policies\/opg-tdm-policy.json"}],"funder":[{"DOI":"10.13039\/501100004663","name":"Ministry of Science and Technology, Taiwan","doi-asserted-by":"publisher","award":["MOST 110-2636-E-007-017"],"award-info":[{"award-number":["MOST 110-2636-E-007-017"]}],"id":[{"id":"10.13039\/501100004663","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["opg.optica.org"],"crossmark-restriction":false},"short-container-title":["Opt. Lett."],"published-print":{"date-parts":[[2022,9,1]]},"abstract":"<jats:p>\n                    THz photoconductive emitters based on III\u2013V materials have demonstrated excellent THz radiation properties, enabling many unique applications. However, the incompatibility with the complementary-metal-oxide-semiconductor (CMOS) foundry fabrication process and the challenging growth condition hampers THz photoconductive emitters from large-scale production. To address this limitation, we proposed the GeSn alloy as the photoconductive material candidate through the CMOS-compatible epitaxy instrument. The GeSn photoconductor features a 518 cm\n                    <jats:sup>2<\/jats:sup>\n                    \/V-s mobility and a 7187\u2005cm\n                    <jats:sup>\u20131<\/jats:sup>\n                    absorption coefficient at the wavelength of 1560\u2005nm, resulting in sufficiently ultrafast photocurrent generation for THz radiation. As a result, the GeSn THz emitter provides over a bandwidth of 2 THz and a 40\u2005dB signal-to-noise ratio, which shows its potential in realizing mass-producible, cost-effective THz integrated systems with CMOS technology.\n                  <\/jats:p>","DOI":"10.1364\/ol.464541","type":"journal-article","created":{"date-parts":[[2022,8,5]],"date-time":"2022-08-05T16:00:54Z","timestamp":1659715254000},"page":"4411","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Group IV THz large area emitter based on GeSn alloy"],"prefix":"10.1364","volume":"47","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4456-8410","authenticated-orcid":true,"given":"Wang-Chien","family":"Chen","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/00zdnkx70","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chia-Wei","family":"Chang","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/00zdnkx70","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5528-9281","authenticated-orcid":true,"given":"Shang-Hua","family":"Yang","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/00zdnkx70","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2022,8,25]]},"reference":[{"key":"ol-47-17-4411-R1","doi-asserted-by":"publisher","first-page":"2722","DOI":"10.1038\/s41467-019-09868-6","volume":"10","author":"Wu","year":"2019","journal-title":"Nat. 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