{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T12:41:14Z","timestamp":1785415274153,"version":"3.56.0"},"reference-count":28,"publisher":"Optica Publishing Group","issue":"6","license":[{"start":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T00:00:00Z","timestamp":1772582400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/doi.org\/10.1364\/OA_License_v2#VOR"},{"start":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T00:00:00Z","timestamp":1772582400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/opg.optica.org\/policies\/opg-tdm-policy.json"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of\n\t\t\t\t\t\tChina","doi-asserted-by":"crossref","award":["62574208"],"award-info":[{"award-number":["62574208"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"},{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Engineering Research Center of digital\n\t\t\t\t\t\tgraphic and next-generation printing, Jiangsu Province, Soochow\n\t\t\t\t\t\tUniversity","award":["SDGC2437"],"award-info":[{"award-number":["SDGC2437"]}]}],"content-domain":{"domain":["opg.optica.org"],"crossmark-restriction":false},"short-container-title":["Opt. Lett."],"published-print":{"date-parts":[[2026,3,15]]},"abstract":"<jats:p>\n                    We propose an Au-free Ti\/Al\/TiN Ohmic contact on an n-type\n\t\t\t\t\tAl\n                    <jats:sub>0.57<\/jats:sub>\n                    Ga\n                    <jats:sub>0.43<\/jats:sub>\n                    N epitaxial layer and utilize it in\n\t\t\t\t\tdeep-ultraviolet light-emitting diodes with improved efficiency. The\n\t\t\t\t\tsurface morphology, chemical stoichiometry, and electrical performance\n\t\t\t\t\tof the proposed contact are thoroughly investigated and compared with\n\t\t\t\t\tthose of conventional Ti\/Al\/Ni\/Au electrodes. The Ti\/Al\/TiN stack\n\t\t\t\t\texhibits a specific contact resistivity of\n\t\t\t\t\t3.41\u2009\u00d7\u200910\n                    <jats:sup>\u22124<\/jats:sup>\n                    \u2009\u03a9\u00b7cm\n                    <jats:sup>2<\/jats:sup>\n                    at optimized annealing conditions, which is 26.5% lower than\n\t\t\t\t\tthat of the conventional Ti\/Al\/Ni\/Au stack\n\t\t\t\t\t(4.64\u2009\u00d7\u200910\n                    <jats:sup>\u22124<\/jats:sup>\n                    \u2009\u03a9\u00b7cm\n                    <jats:sup>2<\/jats:sup>\n                    ).\n\t\t\t\t\tA smoother surface morphology and the absence of phase separation are\n\t\t\t\t\tidentified in the proposed Ti\/Al\/TiN design, attributed to the low\n\t\t\t\t\tdiffusivity of TiN into other metal alloys and its strong thermal\n\t\t\t\t\tstability as a binary compound.\n                  <\/jats:p>","DOI":"10.1364\/ol.590047","type":"journal-article","created":{"date-parts":[[2026,2,10]],"date-time":"2026-02-10T15:00:10Z","timestamp":1770735610000},"page":"1444","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["TiN-based Au-free Ohmic contact on n-AlGaN and fabrication of high efficiency DUV-LEDs"],"prefix":"10.1364","volume":"51","author":[{"given":"Mingyue","family":"Lou","sequence":"first","affiliation":[{"name":"Ningbo University"},{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongyu","family":"Liu","sequence":"additional","affiliation":[{"name":"Ningbo University"},{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huaxin","family":"Shen","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yafei","family":"Huang","sequence":"additional","affiliation":[{"name":"Yongjiang Laboratory"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siqi","family":"Li","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shengli","family":"Qi","sequence":"additional","affiliation":[{"name":"Ningbo ANN Semiconductor Co., Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8013-5508","authenticated-orcid":true,"given":"Li","family":"Chen","sequence":"additional","affiliation":[{"name":"Ningbo ANN Semiconductor Co., Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhenhai","family":"Yang","sequence":"additional","affiliation":[{"name":"Soochow University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jichun","family":"Ye","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences"},{"name":"Yongjiang Laboratory"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6233-0529","authenticated-orcid":true,"given":"Wei","family":"Guo","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences"},{"name":"Yongjiang Laboratory"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2026,3,4]]},"reference":[{"key":"ol-51-6-1444-R1","doi-asserted-by":"publisher","first-page":"844","DOI":"10.3390\/mi14040844","type":"journal-article","volume":"14","author":"Xu","year":"2023","journal-title":"Micromachines"},{"key":"ol-51-6-1444-R2","doi-asserted-by":"publisher","first-page":"131188","DOI":"10.1109\/ACCESS.2023.3348273","type":"journal-article","volume":"12","author":"Huang","year":"2024","journal-title":"IEEE Access"},{"key":"ol-51-6-1444-R3","doi-asserted-by":"publisher","first-page":"561","DOI":"10.1562\/0031-8655(2002)076<0561:AHOUPF>2.0.CO;2","type":"journal-article","volume":"76","author":"Hockberger","year":"2002","journal-title":"Photochem. 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All rights,\n\t\t\t\t\tincluding for text and data mining (TDM), Artificial Intelligence (AI)\n\t\t\t\t\ttraining, and similar technologies, are\n\t\t\t\t\treserved.","name":"copyright","label":"Copyright"}]}}