{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,12]],"date-time":"2026-08-12T16:39:06Z","timestamp":1786552746683,"version":"build-2736575974"},"reference-count":18,"publisher":"Optica Publishing Group","issue":"16","license":[{"start":{"date-parts":[[2026,8,12]],"date-time":"2026-08-12T00:00:00Z","timestamp":1786492800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/doi.org\/10.1364\/OA_License_v2#VOR"},{"start":{"date-parts":[[2026,8,12]],"date-time":"2026-08-12T00:00:00Z","timestamp":1786492800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/opg.optica.org\/policies\/opg-tdm-policy.json"}],"content-domain":{"domain":["opg.optica.org"],"crossmark-restriction":false},"short-container-title":["Opt. Lett."],"published-print":{"date-parts":[[2026,8,15]]},"abstract":"<jats:p>The Liu method extracts laser-induced damage thresholds from the dependence of the damage area on the peak fluence of an incident Gaussian beam. Here, we develop a nonlinear Liu-plot description for femtosecond laser ablation of absorbing thin films irradiated through nonlinear Kerr-type dielectric substrates. We derive an analytical expression for the effective Gaussian fluence distribution incident at the film\/substrate interface. This approach retains the construction of the Liu plot while allowing the size of the ablation crater to evolve in a nontrivial way with pulse fluence. The model predicts zero-gradient fluence regions, where the ablation-crater size becomes locally insensitive to pulse-energy fluctuations, suggesting a possible route toward more precise ultrashort-pulse thin-film nanofabrication.<\/jats:p>","DOI":"10.1364\/ol.608781","type":"journal-article","created":{"date-parts":[[2026,7,24]],"date-time":"2026-07-24T20:00:08Z","timestamp":1784923208000},"page":"4673","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Role of Kerr-type self-focusing in femtosecond laser ablation of thin films irradiated through dielectric substrates"],"prefix":"10.1364","volume":"51","author":[{"given":"Charlie","family":"Mass\u00e9","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/015x8rz21","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Evgeny L.","family":"Gurevich","sequence":"additional","affiliation":[{"name":"University of Applied Sciences M\u00fcnster"},{"name":"Anhui University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Andreas","family":"Ostendorf","sequence":"additional","affiliation":[{"name":"Ruhr University Bochum"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Vasily V.","family":"Temnov","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/015x8rz21","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Ruhr University Bochum"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2026,8,12]]},"reference":[{"key":"ol-51-16-4673-R2","doi-asserted-by":"publisher","first-page":"196","DOI":"10.1364\/ol.7.000196","type":"journal-article","volume":"7","author":"Liu","year":"1982","journal-title":"Opt. 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All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.","name":"copyright","label":"Copyright"}]}}