{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,14]],"date-time":"2026-08-14T21:36:25Z","timestamp":1786743385896,"version":"build-2736575974"},"reference-count":24,"publisher":"Optica Publishing Group","issue":"16","license":[{"start":{"date-parts":[[2026,8,14]],"date-time":"2026-08-14T00:00:00Z","timestamp":1786665600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/doi.org\/10.1364\/OA_License_v2#VOR"},{"start":{"date-parts":[[2026,8,14]],"date-time":"2026-08-14T00:00:00Z","timestamp":1786665600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/opg.optica.org\/policies\/opg-tdm-policy.json"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["62475005"],"award-info":[{"award-number":["62475005"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"},{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100009592","name":"Beijing Municipal Science and Technology Commission","doi-asserted-by":"crossref","award":["4232062"],"award-info":[{"award-number":["4232062"]}],"id":[{"id":"10.13039\/501100009592","id-type":"DOI","asserted-by":"crossref"},{"id":"https:\/\/ror.org\/034k14f91","id-type":"ROR","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100009592","name":"Beijing Municipal Science and Technology Commission","doi-asserted-by":"crossref","award":["4192014"],"award-info":[{"award-number":["4192014"]}],"id":[{"id":"10.13039\/501100009592","id-type":"DOI","asserted-by":"crossref"},{"id":"https:\/\/ror.org\/034k14f91","id-type":"ROR","asserted-by":"publisher"}]}],"content-domain":{"domain":["opg.optica.org"],"crossmark-restriction":false},"short-container-title":["Opt. Lett."],"published-print":{"date-parts":[[2026,8,15]]},"abstract":"<jats:p>\n                    Silicon-based heterojunction phototransistors (HPTs) demonstrate advantages of high internal gain and compatibility with CMOS technology. A novel, to the best of our knowledge, nanohole-assisted SiGe\/Si HPT was designed and fabricated to achieve high absorption and alleviate the contradiction between responsivity and speed of detectors. A 2D nanohole array with a 1000\u2009nm period to support a lateral transmission mode was embedded into the absorption region through the optical window located on the base mesa. The diameter and depth of the nanohole were optimized to reach a higher optical absorption efficiency of 0.80. The nanohole-assisted SiGe\/Si HPT was fabricated using a BiCMOS-compatible mesa process. Under 850\u2009nm incident light, the novel device with a window radius of 20\u2009\u00b5m exhibited a responsivity of 13.02\u2009A\/W and a specific detectivity of 2.56 \u00d7 10\n                    <jats:sup>12<\/jats:sup>\n                    \u2009cm\u00b7Hz\n                    <jats:sup>0.5<\/jats:sup>\n                    \/W, representing an enhancement of 525.9% and 498.1% compared with the standard SiGe\/Si HPT with the same structure but without a nanohole array. The nanohole-assisted Si-HPT demonstrates highly promising potential for applications in low-light detection.\n                  <\/jats:p>","DOI":"10.1364\/ol.609673","type":"journal-article","created":{"date-parts":[[2026,7,31]],"date-time":"2026-07-31T17:00:10Z","timestamp":1785517210000},"page":"4733","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Nanohole-assisted SiGe\/Si phototransistor with high absorption efficiency"],"prefix":"10.1364","volume":"51","author":[{"given":"Hongyun","family":"Xie","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tieyi","family":"Li","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Weizhao","family":"Jiao","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yudi","family":"Liu","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yudong","family":"Ma","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Su","family":"Yan","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingxian","family":"Xiong","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lihao","family":"Hua","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yunpeng","family":"Ge","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wanrong","family":"Zhang","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/037b1pp87","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2026,8,14]]},"reference":[{"key":"ol-51-16-4733-R1","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1109\/LED.2022.3233038","type":"journal-article","volume":"44","author":"Liu","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"ol-51-16-4733-R2","doi-asserted-by":"publisher","first-page":"533","DOI":"10.1021\/acs.nanolett.2c03932","type":"journal-article","volume":"23","author":"Fu","year":"2023","journal-title":"Nano Lett."},{"key":"ol-51-16-4733-R3","doi-asserted-by":"publisher","first-page":"697","DOI":"10.1109\/LPT.2024.3389109","type":"journal-article","volume":"36","author":"Du","year":"2024","journal-title":"IEEE Photon. 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All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.","name":"copyright","label":"Copyright"}]}}