{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,16]],"date-time":"2026-03-16T12:33:12Z","timestamp":1773664392144,"version":"3.50.1"},"reference-count":16,"publisher":"Walter de Gruyter GmbH","issue":"2","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,6,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Sputtering is characterized by a sputtering yield ratio which depends on several conditions, in particular the incident ions energy to the cathode, in normal incidence and when considers the angle \u03b1 of the incident ions. Our investigations may be considered in first step to calculate the sputtering yield of three metals: copper, silver, and aluminum collide with argon, xenon, oxygen and nitrogen ions using highly developed software called SRIM (Stopping and Range of Ions in Matter) with normal incidence, then with varied angles in future works. The results obtained are compared with those obtained using the analytical models based on the Monte Carlo method proposed by researchers as Sigmund and Yamamaura in order to validate models.<\/jats:p>","DOI":"10.1515\/mcma-2016-0106","type":"journal-article","created":{"date-parts":[[2016,5,27]],"date-time":"2016-05-27T10:03:04Z","timestamp":1464343384000},"page":"149-159","source":"Crossref","is-referenced-by-count":7,"title":["Study and simulation of the sputtering process of material layers in plasma"],"prefix":"10.1515","volume":"22","author":[{"given":"Abdelkader","family":"Bouazza","sequence":"first","affiliation":[{"name":"Electrical Engineering Department, University of Sciences and Technology, P.O. Box 1505 El-M'Naouar, Oran, Algeria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Abderrahmane","family":"Settaouti","sequence":"additional","affiliation":[{"name":"Electrical Engineering Department, University of Sciences and Technology, P.O. Box 1505 El-M'Naouar, Oran, Algeria"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"374","published-online":{"date-parts":[[2016,5,27]]},"reference":[{"key":"2023040101305240839_j_mcma-2016-0106_ref_000_w2aab2b8b6b1b7b1ab1b1b1Aa","doi-asserted-by":"crossref","unstructured":"J. Bohdansky,\nA universal relation for the sputtering yield of monatomic solids at normal ion incidence,\nNuclear Instruments Methods Phys. Res. 2 (1984), 1\u20133, 587\u2013591.","DOI":"10.1016\/0168-583X(84)90271-4"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_001_w2aab2b8b6b1b7b1ab1b1b2Aa","doi-asserted-by":"crossref","unstructured":"D. Depla and W. P. Leroy,\nMagnetron sputter deposition as visualized by Monte Carlo modeling,\nThin Solid Films 520 (2012), 6337\u20136354.","DOI":"10.1016\/j.tsf.2012.06.032"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_002_w2aab2b8b6b1b7b1ab1b1b3Aa","unstructured":"B. O. Duchemin,\nAn Investigation of Ion Engine Erosion by Low Energy,\nCalifornia Institute of Technology, Pasadena, 1995."},{"key":"2023040101305240839_j_mcma-2016-0106_ref_003_w2aab2b8b6b1b7b1ab1b1b4Aa","doi-asserted-by":"crossref","unstructured":"S. Mahieu,\nBiaxial Alignment in Sputter Deposited thin Films,\nFaculteit Wetenschappen, Leuven, 2006.","DOI":"10.1016\/j.tsf.2006.06.027"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_004_w2aab2b8b6b1b7b1ab1b1b5Aa","doi-asserted-by":"crossref","unstructured":"N. Matsunami, Y. Yamamura, Y. Itikawa, N. Itoh, Y. Kazumata, S. Miyagawa, K. Morita, R. Shimizu and H. Tawara,\nEnergy dependence of the ion induced sputtering yield of monoatomic,\nAt. Data Nuclear Table 31 (1984), 1, 1\u201380.","DOI":"10.1016\/0092-640X(84)90016-0"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_005_w2aab2b8b6b1b7b1ab1b1b6Aa","doi-asserted-by":"crossref","unstructured":"K. Meyer, I. K. Schuller and C. M. Falco,\nThermalization of sputtered atoms,\nJ. Appl. Phys. 52 (1981), 5803\u20135805.","DOI":"10.1063\/1.329473"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_006_w2aab2b8b6b1b7b1ab1b1b7Aa","doi-asserted-by":"crossref","unstructured":"R. Parsons,\nSputter deposition processes,\nThin Film Processes II,\nAcademic Press, San Diego (1991), 177\u2013204.","DOI":"10.1016\/B978-0-08-052421-4.50009-5"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_007_w2aab2b8b6b1b7b1ab1b1b8Aa","unstructured":"D. Piscitelli,\nSimulation de la pulv\u00e9risation cathodique dans les \u00e9crans \u00e0 plasma,\nPhD thesis, Universit\u00e9 Paul Sabatier U.F.R. Physique Chimie Automatique, Toulouse, 2002."},{"key":"2023040101305240839_j_mcma-2016-0106_ref_008_w2aab2b8b6b1b7b1ab1b1b9Aa","unstructured":"M. Saraiva,\nSputter deposition of MgO thin films: The effect of cation substitution,\nPhD thesis, Universiteit Gent Faculteit Wetenschappen, Gent, 2012."},{"key":"2023040101305240839_j_mcma-2016-0106_ref_009_w2aab2b8b6b1b7b1ab1b1c10Aa","doi-asserted-by":"crossref","unstructured":"A. Settaouti and L. Settaouti,\nSimulation of the transport of sputtered atoms and effects of processing conditions,\nAppl. Surface Sci. 254 (2008), 18, 5750\u20135756.","DOI":"10.1016\/j.apsusc.2008.03.042"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_010_w2aab2b8b6b1b7b1ab1b1c11Aa","doi-asserted-by":"crossref","unstructured":"P. Sigmund,\nSputtering by ion bombardment theoretical concepts,\nSputtering by particle bombardment I,\nTopics Appl. Phys. 47,\nSpringer, Berlin (1981), 9\u201371.","DOI":"10.1007\/3540105212_7"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_011_w2aab2b8b6b1b7b1ab1b1c12Aa","unstructured":"K. Wasa and S. Hayakawa,\nHandbook of Sputter Deposition Technology,\nNoyes Publications, Saddle River, 1992."},{"key":"2023040101305240839_j_mcma-2016-0106_ref_012_w2aab2b8b6b1b7b1ab1b1c13Aa","doi-asserted-by":"crossref","unstructured":"H. F. Winters and P. Sigmund,\nSputtering of chemisorbed gas (nitrogen on tungsten) by low energy ions,\nJ. Appl. Phys. 45 (1974), 4760\u20134760.","DOI":"10.1063\/1.1663131"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_013_w2aab2b8b6b1b7b1ab1b1c14Aa","doi-asserted-by":"crossref","unstructured":"Y. Yamamura and M. Ishida,\nMonte-Carlo simulation of the thermalization of the sputtered atoms and reflected atoms in the magnetron sputtering discharge,\nJ. Vac. Sci. Technol. A 13 (1995), 1, 101\u2013112.","DOI":"10.1116\/1.579874"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_014_w2aab2b8b6b1b7b1ab1b1c15Aa","doi-asserted-by":"crossref","unstructured":"Y. Yamamura and H. Tawara,\nEnergy dependence of ion-induced sputtering yields from monatomic solids at normal incidence,\nAt. Data Nuclear Data Tables 62 (1996), 2, 149\u2013253.","DOI":"10.1006\/adnd.1996.0005"},{"key":"2023040101305240839_j_mcma-2016-0106_ref_015_w2aab2b8b6b1b7b1ab1b1c16Aa","unstructured":"The stopping and range of ions in matter, 2013, http:\/\/www.srim.org."}],"container-title":["Monte Carlo Methods and Applications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.degruyter.com\/document\/doi\/10.1515\/mcma-2016-0106\/xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.degruyter.com\/document\/doi\/10.1515\/mcma-2016-0106\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T20:24:53Z","timestamp":1680380693000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.degruyter.com\/document\/doi\/10.1515\/mcma-2016-0106\/html"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,5,27]]},"references-count":16,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2016,6,1]]},"published-print":{"date-parts":[[2016,6,1]]}},"alternative-id":["10.1515\/mcma-2016-0106"],"URL":"https:\/\/doi.org\/10.1515\/mcma-2016-0106","relation":{},"ISSN":["0929-9629","1569-3961"],"issn-type":[{"value":"0929-9629","type":"print"},{"value":"1569-3961","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,5,27]]}}}