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Marx av. , Novosibirsk , 630073 , Russia"}]},{"given":"Konstantin S.","family":"Zhuravlev","sequence":"additional","affiliation":[{"name":"Rzhanov Institute of Semiconductor Physics , Siberian Branch of Russian Academy of Sciences, Lavrentiev Prosp. 13; and Novosibirsk State University, Pirogov Str. 2 , Novosibirsk , 630090 , Russia"}]}],"member":"374","published-online":{"date-parts":[[2020,10,30]]},"reference":[{"key":"2023040102281286852_j_mcma-2020-2077_ref_001_w2aab3b7e1156b1b6b1ab2ab1Aa","doi-asserted-by":"crossref","unstructured":"L. Ardaravicius, O. Kiprijanovic, J. Liberis, A. Matulionis, X. Li, F. Zhang, M. Wu, V. Avrutin, U. Ozgur and H. Morkoc,\nHot-electron drift velocity in AlGaN\/AlN\/AlGaN\/GaN camelback channel,\nSemicond. Sci. Technol. 27 (2012), Article ID 122001.","DOI":"10.1088\/0268-1242\/27\/12\/122001"},{"key":"2023040102281286852_j_mcma-2020-2077_ref_002_w2aab3b7e1156b1b6b1ab2ab2Aa","doi-asserted-by":"crossref","unstructured":"L. Ardaravicius, A. 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