{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,31]],"date-time":"2022-03-31T11:04:09Z","timestamp":1648724649350},"reference-count":10,"publisher":"Springer Science and Business Media LLC","license":[{"start":{"date-parts":[[2011,2,1]],"date-time":"2011-02-01T00:00:00Z","timestamp":1296518400000},"content-version":"unspecified","delay-in-days":396,"URL":"https:\/\/www.cambridge.org\/core\/terms"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["MRS Proc."],"published-print":{"date-parts":[[2010]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Low temperature (400\u00b0C) deposition of ferromagnetic Ni-Mn-Ga thin films is successfully performed via rf magnetron sputtering technique using co-deposition of two targets Ni<jats:sub>50<\/jats:sub>Mn<jats:sub>50<\/jats:sub> and Ni<jats:sub>50<\/jats:sub>Ga<jats:sub>50<\/jats:sub> on sapphire (0001) and Si (100) substrates. The films are in part amorphous with significant degree of crystallinity. The obtained crystallographic structure is shown to be substrate-dependent. Films on both substrates are ferromagnetic at room temperature (Curie temperature \u223c 332.5K) with well-defined hysteresis loops, low coercivity (\u223c 100 Oe) and a saturation magnetization of \u223c 200 emu\/cc. At low temperature (5 K), both films show increased magnetization value with wider hysteresis loops having higher coercivity and remanent magnetization. The process is therefore effective in achieving the appropriate thermodynamic conditions to deposit thin films of the Ni-Mn-Ga austenitic phase (highly magnetic at room temperature) at relatively low substrate temperature without the need for post-deposition annealing or further thermal treatment, which is prerequisite for the device fabrication.<\/jats:p>","DOI":"10.1557\/proc-1250-g08-02","type":"journal-article","created":{"date-parts":[[2010,8,13]],"date-time":"2010-08-13T10:30:03Z","timestamp":1281695403000},"source":"Crossref","is-referenced-by-count":2,"title":["Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering"],"prefix":"10.1557","volume":"1250","author":[{"given":"A. C.","family":"Louren\u00e7o","sequence":"first","affiliation":[]},{"given":"F.","family":"Figueiras","sequence":"additional","affiliation":[]},{"given":"S.","family":"Das","sequence":"additional","affiliation":[]},{"given":"J. S.","family":"Amaral","sequence":"additional","affiliation":[]},{"given":"G. N.","family":"Kakazei","sequence":"additional","affiliation":[]},{"given":"D. V.","family":"Karpinsky","sequence":"additional","affiliation":[]},{"given":"N.","family":"Soares","sequence":"additional","affiliation":[]},{"given":"M.","family":"Peres","sequence":"additional","affiliation":[]},{"given":"M. J.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"P. B.","family":"Tavares","sequence":"additional","affiliation":[]},{"given":"N.","family":"Sobolev","sequence":"additional","affiliation":[]},{"given":"V.","family":"Amaral","sequence":"additional","affiliation":[]},{"given":"N. M.","family":"Santos","sequence":"additional","affiliation":[]},{"given":"Andrei L.","family":"Kholkin","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2011,2,1]]},"reference":[{"key":"S194642740000261X_ref007","doi-asserted-by":"publisher","DOI":"10.1088\/0964-1726\/14\/5\/012"},{"key":"S194642740000261X_ref008","doi-asserted-by":"publisher","DOI":"10.1063\/1.326321"},{"key":"S194642740000261X_ref005","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmmm.2003.12.1093"},{"key":"S194642740000261X_ref003","doi-asserted-by":"publisher","DOI":"10.1063\/1.1771474"},{"key":"S194642740000261X_ref001","volume":"10","author":"Thomas","year":"2008","journal-title":"New J. Phys"},{"key":"S194642740000261X_ref002","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-004-2831-7"},{"key":"S194642740000261X_ref004","doi-asserted-by":"publisher","DOI":"10.1063\/1.1326461"},{"key":"S194642740000261X_ref009","unstructured":"9US Patent no. US 6454913 B1 (Sept 24, 2002)"},{"key":"S194642740000261X_ref010","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2002.803567"},{"key":"S194642740000261X_ref006","doi-asserted-by":"publisher","DOI":"10.1063\/1.2883961"}],"container-title":["MRS Proceedings"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.cambridge.org\/core\/services\/aop-cambridge-core\/content\/view\/S194642740000261X","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,2,24]],"date-time":"2021-02-24T20:23:08Z","timestamp":1614198188000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1557\/PROC-1250-G08-02"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010]]},"references-count":10,"alternative-id":["S194642740000261X"],"URL":"https:\/\/doi.org\/10.1557\/proc-1250-g08-02","relation":{},"ISSN":["0272-9172","1946-4274"],"issn-type":[{"value":"0272-9172","type":"print"},{"value":"1946-4274","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010]]},"article-number":"1250-G08-02"}}