{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T14:40:28Z","timestamp":1648996828341},"reference-count":14,"publisher":"Springer Science and Business Media LLC","license":[{"start":{"date-parts":[[2011,2,15]],"date-time":"2011-02-15T00:00:00Z","timestamp":1297728000000},"content-version":"unspecified","delay-in-days":4428,"URL":"https:\/\/www.cambridge.org\/core\/terms"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["MRS Proc."],"published-print":{"date-parts":[[1999]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The structural and optoelectronic properties of silicon thin films prepared by hot wire chemical vapor deposition and radio frequency plasma enhanced chemical vapor deposition are studied in the range of substrate temperatures (<jats:italic>T<\/jats:italic><jats:sub>sub<\/jats:sub>)from 100 \u00b0C to 25 \u00b0C. The defect density, structure factor and bond angle disorder of amorphous silicon films (a-Si:H) deposited by both techniques are strongly improved by the use of hydrogen dilution. Correlation of these structural properties with important optoelectronic properties, such as photo-to-dark conductivity ratio, is made. Microcrystalline silicon (\u03bcc-Si:H) is obtained using HW with a large crystalline fraction for hydrogen dilutions above 85% independently of <jats:italic>T<\/jats:italic><jats:sub>sub<\/jats:sub>. The deposition of \u03bcc-Si:H by RF requires increasing the hydrogen dilution and shows decreasing crystalline fraction as <jats:italic>T<\/jats:italic><jats:sub>sub<\/jats:sub> is decreased. The properties of the low <jats:italic>T<\/jats:italic><jats:sub>sub<\/jats:sub> films are compared to those of samples produced at 175 \u00b0C and 250 \u00b0C in the same reactors.<\/jats:p>","DOI":"10.1557\/proc-557-91","type":"journal-article","created":{"date-parts":[[2011,4,5]],"date-time":"2011-04-05T14:19:40Z","timestamp":1302013180000},"source":"Crossref","is-referenced-by-count":0,"title":["Structural and optoelectronic properties of amorphous and microcrystalline silicon deposited at low substrate temperatures by RF and HW CVD"],"prefix":"10.1557","volume":"557","author":[{"given":"P.","family":"Alpuim","sequence":"first","affiliation":[]},{"given":"V.","family":"Chu","sequence":"additional","affiliation":[]},{"given":"J. P.","family":"Conde","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2011,2,15]]},"reference":[{"key":"S1946427400335266_ref012","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.36.3344"},{"key":"S1946427400335266_ref001","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9780511525247"},{"key":"S1946427400335266_ref002","doi-asserted-by":"publisher","DOI":"10.1557\/PROC-420-3"},{"key":"S1946427400335266_ref007","doi-asserted-by":"publisher","DOI":"10.1557\/PROC-377-119"},{"key":"S1946427400335266_ref014","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.34.5515"},{"key":"S1946427400335266_ref009","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-3093(05)80127-9"},{"key":"S1946427400335266_ref013","doi-asserted-by":"publisher","DOI":"10.1063\/1.356432"},{"key":"S1946427400335266_ref010","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3093(80)90603-1"},{"key":"S1946427400335266_ref008","doi-asserted-by":"publisher","DOI":"10.1016\/0165-1633(83)90006-0"},{"key":"S1946427400335266_ref005","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3093(93)90497-L"},{"key":"S1946427400335266_ref003","doi-asserted-by":"publisher","DOI":"10.1080\/01418639708241095"},{"key":"S1946427400335266_ref006","doi-asserted-by":"publisher","DOI":"10.1007\/BF00331926"},{"key":"S1946427400335266_ref011","doi-asserted-by":"publisher","DOI":"10.1063\/1.111781"},{"key":"S1946427400335266_ref004","doi-asserted-by":"publisher","DOI":"10.1063\/1.348897"}],"container-title":["MRS Proceedings"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.cambridge.org\/core\/services\/aop-cambridge-core\/content\/view\/S1946427400335266","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,2,24]],"date-time":"2021-02-24T21:48:38Z","timestamp":1614203318000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1557\/PROC-557-91"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1999]]},"references-count":14,"alternative-id":["S1946427400335266"],"URL":"https:\/\/doi.org\/10.1557\/proc-557-91","relation":{},"ISSN":["0272-9172","1946-4274"],"issn-type":[{"value":"0272-9172","type":"print"},{"value":"1946-4274","type":"electronic"}],"subject":[],"published":{"date-parts":[[1999]]},"article-number":"91"}}