{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,11]],"date-time":"2024-02-11T12:59:54Z","timestamp":1707656394869},"reference-count":17,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2014,6,13]],"date-time":"2014-06-13T00:00:00Z","timestamp":1402617600000},"content-version":"unspecified","delay-in-days":5277,"URL":"https:\/\/www.cambridge.org\/core\/terms"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["MRS Internet j. nitride semicond. res."],"published-print":{"date-parts":[[2000]]},"abstract":"<jats:p>The annealing of implantation induced lattice damage in AlN, GaN and InN was studied by means of the perturbed angular correlation (PAC) technique using the PAC probe <jats:sup>181<\/jats:sup>Hf(<jats:sup>181<\/jats:sup>Ta). In all three lattices substantial fractions of the probe atoms occupied substitutional lattice sites after annealing. A detailed investigation of the changes observed during isochronal annealing indicates differences in the recovery process. In GaN the trapping of a unique defect, possibly a Nitrogen vacancy, in an intermediate temperature range was found.<\/jats:p>","DOI":"10.1557\/s1092578300000053","type":"journal-article","created":{"date-parts":[[2016,8,8]],"date-time":"2016-08-08T06:28:24Z","timestamp":1470637704000},"source":"Crossref","is-referenced-by-count":6,"title":["Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides"],"prefix":"10.1557","volume":"5","author":[{"given":"K.","family":"Lorenz","sequence":"first","affiliation":[]},{"given":"R.","family":"Vianden","sequence":"additional","affiliation":[]},{"given":"S.J.","family":"Pearton","sequence":"additional","affiliation":[]},{"given":"Cammy R.","family":"Abernathy","sequence":"additional","affiliation":[]},{"given":"J.M.","family":"Zavada","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2014,6,13]]},"reference":[{"key":"S1092578300000053_b3","first-page":"G6","volume":"4S1","author":"Cao","year":"1999","journal-title":"MRS Internet J. Nitride Semicond. Res"},{"key":"S1092578300000053_b4","doi-asserted-by":"publisher","DOI":"10.1063\/1.117526"},{"key":"S1092578300000053_b11","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.187.39"},{"key":"S1092578300000053_b15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.123.103"},{"key":"S1092578300000053_b1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.30.L1998"},{"key":"S1092578300000053_b6","doi-asserted-by":"publisher","DOI":"10.1149\/1.2108477"},{"key":"S1092578300000053_b12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.55.5073"},{"key":"S1092578300000053_b13","first-page":"35","volume-title":"Characterization of Defects in Materials Symposium. Mater. Res. Soc","author":"Wichert","year":"1987"},{"key":"S1092578300000053_b7","doi-asserted-by":"publisher","DOI":"10.1016\/0375-9601(83)90362-6"},{"key":"S1092578300000053_b14","doi-asserted-by":"publisher","DOI":"10.1557\/S1092578300001411"},{"key":"S1092578300000053_b9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.47.8763"},{"key":"S1092578300000053_b2","first-page":"110","volume-title":"Proc. of the Symp. on Light Emitting Devices for Optoelectronic Applications and Twenty-Eighth State-of-the-Art Program on Compound Semiconductors","author":"Hommerich","year":"1998"},{"key":"S1092578300000053_b8","unstructured":"[8] Schatz G. , Weidinger A. , Gardner JA. , \u201cNuclear Condensed Matter Physics (Nuclear Methods and Applications)\u201d John Wiley & Sons, (1996) Chichester, New York, Brisbane, Toronto, Singapore (No journal name recognized.)"},{"key":"S1092578300000053_b17","volume-title":"The Blue Laser Diode - GaN based Light Emitters and Lasers","author":"Nakamura","year":"1997"},{"key":"S1092578300000053_b5","doi-asserted-by":"publisher","DOI":"10.1016\/0029-554X(80)90440-1"},{"key":"S1092578300000053_b16","doi-asserted-by":"publisher","DOI":"10.1142\/S0217984999000385"},{"key":"S1092578300000053_b10","doi-asserted-by":"publisher","DOI":"10.1016\/S0921-5107(98)00392-4"}],"container-title":["MRS Internet Journal of Nitride Semiconductor Research"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.cambridge.org\/core\/services\/aop-cambridge-core\/content\/view\/S1092578300000053","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,2,24]],"date-time":"2021-02-24T20:03:09Z","timestamp":1614196989000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1557\/S1092578300000053"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2000]]},"references-count":17,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2000]]}},"alternative-id":["S1092578300000053"],"URL":"https:\/\/doi.org\/10.1557\/s1092578300000053","relation":{},"ISSN":["1092-5783"],"issn-type":[{"value":"1092-5783","type":"electronic"}],"subject":[],"published":{"date-parts":[[2000]]},"article-number":"e5"}}