{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,2]],"date-time":"2026-05-02T22:35:54Z","timestamp":1777761354511,"version":"3.51.4"},"reference-count":155,"publisher":"Emerald","issue":"2-3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,11,27]]},"abstract":"<jats:p>Chip-level soft-error rate (SER) estimation can come from two sources: direct experimental measurement and simulation. Because SER mitigation decisions need to be made very early in the product design cycle, long before product Si is available, a simulation-based methodology of chip-level radiation-induced soft error rates that is fast and reasonably accurate is crucial to the reliability and success of the final product.<\/jats:p>\n                  <jats:p>The following contribution summarizes selected publications that are deemed relevant by the author to enable a truly chip-level radiationinduced soft error rate estimation methodology. Although the strategies and concepts described have microprocessors manufactured in bulk CMOS technologies in mind, there is no fundamental reason why they cannot be applied to other technologies and different types of integrated circuits (ICs).<\/jats:p>","DOI":"10.1561\/1000000018","type":"journal-article","created":{"date-parts":[[2010,12,7]],"date-time":"2010-12-07T07:29:05Z","timestamp":1291706945000},"page":"99-221","source":"Crossref","is-referenced-by-count":22,"title":["Radiation-induced Soft Errors: A Chip-level Modeling Perspective"],"prefix":"10.1108","volume":"4","author":[{"given":"Norbert","family":"Seifert","sequence":"first","affiliation":[{"name":"Intel Corporation , Logic Technology Development Q&R, Hillsboro, OR 97124,","place":["USA"]}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"140","published-online":{"date-parts":[[2010,11,27]]},"reference":[{"issue":"3","key":"2026032901022863900_ref001","doi-asserted-by":"crossref","first-page":"250","DOI":"10.1016\/S0168-9002(03)01368-8","article-title":"GEANT4 \u2014 a simulation toolkit","volume":"506","author":"Agostinelli","year":"2003","journal-title":"Nuclear Instruments and Methods in Physics Research Section A"},{"key":"2026032901022863900_ref002","article-title":"private communication; runtime is estimated to equal about 72 hours per particle strike for a full 3D mixed-mode device simulation","author":"Amusan"},{"key":"2026032901022863900_ref003","first-page":"306","article-title":"Single Event upsets in a 130 nm hardened latch design due to charge sharing","author":"Amusan"},{"key":"2026032901022863900_ref004","article-title":"Analysis of a multiple cell upset failure model for memories","author":"Baeg"},{"issue":"6","key":"2026032901022863900_ref005","doi-asserted-by":"crossref","first-page":"2149","DOI":"10.1109\/TNS.2007.910039","article-title":"Single event upsets induced by 1-10 MeV neutrons in static-RAMs using mono-energetic neutron sources","volume":"54","author":"Baggio","year":"2007","journal-title":"IEEE Transactions on Nuclear Science"},{"issue":"6","key":"2026032901022863900_ref006","doi-asserted-by":"crossref","first-page":"1504","DOI":"10.1109\/23.819114","article-title":"On the figure of merit model for SEU rate calculations","volume":"46","author":"Barak","year":"1999","journal-title":"IEEE Transactions on Nuclear Science"},{"key":"2026032901022863900_ref007","first-page":"297","article-title":"Boron compounds as a dominant source of alpha particles in semiconductor devices","author":"Baumann"},{"key":"2026032901022863900_ref008","article-title":"IEEE International Test Conference (ITC) 2005 SER Tutorial","author":"Baumann"},{"issue":"3","key":"2026032901022863900_ref009","doi-asserted-by":"crossref","first-page":"305","DOI":"10.1109\/TDMR.2005.853449","article-title":"Radiation-induced soft errors in advanced semiconductor technologies","volume":"5","author":"Baumann","year":"2005","journal-title":"IEEE Transactions on Device and Materials Reliability"},{"issue":"6","key":"2026032901022863900_ref010","doi-asserted-by":"crossref","first-page":"2141","DOI":"10.1109\/TNS.2007.909709","article-title":"Determination of geometry and absorption effects and their impact on the accuracy of alpha particle soft error rate extrapolations","volume":"54","author":"Baumann","year":"2007","journal-title":"IEEE Transactions on Nuclear Science"},{"issue":"2","key":"2026032901022863900_ref011","doi-asserted-by":"crossref","first-page":"211","DOI":"10.1016\/S0026-2714(00)00218-3","article-title":"Neutron-induced 10B fission as a major source of soft errors in high density SRAMs","volume":"41","author":"Baumann","year":"2001","journal-title":"Elsevier Microelectronics Reliability"},{"issue":"6","key":"2026032901022863900_ref012","doi-asserted-by":"crossref","first-page":"2217","DOI":"10.1109\/23.659038","article-title":"Attenuation of single event induced pulses in cmos combinational logic","volume":"44","author":"Baze","year":"1997","journal-title":"IEEE Transactions on Nuclear Science"},{"issue":"2","key":"2026032901022863900_ref013","doi-asserted-by":"crossref","first-page":"107","DOI":"10.1049\/ip-cds:20000197","article-title":"Logical modelling of delay degradation effect in static CMOS gates","volume":"147","author":"Bellido-Diaz","year":"2000","journal-title":"IEEE Proceedings-Circuits Devices Systems"},{"key":"2026032901022863900_ref014","first-page":"532","article-title":"Computing architectural vulnerability factors for address-based structures","author":"Biswas"},{"key":"2026032901022863900_ref015","first-page":"1","article-title":"Explaining cache SER anomaly using DUE AVF measurement","author":"Biswas"},{"issue":"1","key":"2026032901022863900_ref016","doi-asserted-by":"crossref","first-page":"77","DOI":"10.1147\/rd.461.0077","article-title":"Fault-tolerant design of the IBM pSeries 690 system using POWER4 processor technology","volume":"46","author":"Bossen","year":"2002","journal-title":"IBM Journal of Research and Development"},{"key":"2026032901022863900_ref017","doi-asserted-by":"crossref","first-page":"2929","DOI":"10.1109\/23.736549","article-title":"Single event upsets in implantable cardioverter defibrillators","volume":"45","author":"Bradley","year":"1998","journal-title":"IEEE Transactions on Nuclear Science"},{"key":"2026032901022863900_ref018","first-page":"195","article-title":"Multi-bit upsets in 65 nm SOI SRAMs","author":"Cannon"},{"key":"2026032901022863900_ref019","first-page":"300","article-title":"SRAM SER in 90, 130, and 180nm bulk and SOI technologies","author":"Cannon"},{"key":"2026032901022863900_ref020","first-page":"310","article-title":"A fast and accurate gate-level transient fault simulation environment","author":"Cha"},{"key":"2026032901022863900_ref021","article-title":"Alpha radiation sources in low alpha materials: Pb free materials. 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