{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,2]],"date-time":"2025-05-02T04:14:23Z","timestamp":1746159263070,"version":"3.40.4"},"reference-count":11,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"4","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2014]]},"DOI":"10.1587\/elex.11.20140051","type":"journal-article","created":{"date-parts":[[2014,1,30]],"date-time":"2014-01-30T23:02:50Z","timestamp":1391122970000},"page":"20140051-20140051","source":"Crossref","is-referenced-by-count":5,"title":["Effect of charge sharing on SEU sensitive area of 40-nm 6T SRAM cells"],"prefix":"10.1587","volume":"11","author":[{"given":"Peng","family":"Li","sequence":"first","affiliation":[{"name":"College of Computer, National University of Defense Technology"}]},{"given":"Minxuan","family":"Zhang","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology"}]},{"given":"Weicheng","family":"Zhang","sequence":"additional","affiliation":[{"name":"ATR Key Lab, National University of Defense Technology"}]},{"given":"Zhenyu","family":"Zhao","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology"}]},{"given":"Chao","family":"Song","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology"}]},{"given":"Hua","family":"Fan","sequence":"additional","affiliation":[{"name":"College of Computer, National University of Defense Technology"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] L. L. Sivo, J. C. Peden, M. Brettschneider, W. Price and Pentecost: IEEE Trans. Nucl. Sci. <b>26<\/b> (1979) 5042.","DOI":"10.1109\/TNS.1979.4330269"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] L. W. Massengill, B. L. Bhuva and W. T. Holman: Int. Reliab. Phys. Symp. (2012) 3C.1.1.","DOI":"10.1109\/IRPS.2012.6241810"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] O. A. Amusan, A. L. Sternberg, A. F. Witulski, B. L. Bhuva, J. D. Black, M. P. Baze and L. W. Massengill: Int. Reliab. Phys. Symp. (2007) 306.","DOI":"10.1109\/RELPHY.2007.369908"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2011.2110662"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2011.2172817"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2007.902360"},{"key":"7","unstructured":"[7] I. Chatterjee: Ph.D thesis University of Vanderbilt, Tennessee (2012)."},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1007\/s11431-012-4753-5"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] J. J. Chen, S. M. Chen, B. Liang and B. W. Liu: IEEE Trans. Device Mater. Rel. <b>12<\/b> (2012) 501.","DOI":"10.1109\/TDMR.2012.2191971"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1088\/1674-1056\/21\/2\/029401"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2011.2168611"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/11\/4\/11_11.20140051\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,1]],"date-time":"2025-05-01T18:27:45Z","timestamp":1746124065000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/11\/4\/11_11.20140051\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014]]},"references-count":11,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2014]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.11.20140051","relation":{},"ISSN":["1349-2543"],"issn-type":[{"type":"electronic","value":"1349-2543"}],"subject":[],"published":{"date-parts":[[2014]]}}}