{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,31]],"date-time":"2022-03-31T15:56:46Z","timestamp":1648742206309},"reference-count":11,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"6","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2015]]},"DOI":"10.1587\/elex.12.20150172","type":"journal-article","created":{"date-parts":[[2015,3,2]],"date-time":"2015-03-02T22:03:51Z","timestamp":1425333831000},"page":"20150172-20150172","source":"Crossref","is-referenced-by-count":3,"title":["A 5\u20138 GHz wideband 100 W internally matched GaN power amplifier"],"prefix":"10.1587","volume":"12","author":[{"given":"Bochao","family":"Zhao","sequence":"first","affiliation":[{"name":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}]},{"given":"Yang","family":"Lu","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}]},{"given":"Jiaxin","family":"Zheng","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}]},{"given":"Wenzhe","family":"Han","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}]},{"given":"Honghe","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}]},{"given":"Yanlong","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] X. H. Ma, J. X. Wei, M. Y. Cao, Y. Lu, B. C. Zhao, L. Dong, Y. Wang and Y. Hao: Chin. Phys. Lett. <b>31<\/b> (2014) 108401. DOI:10.1088\/0256-307X\/31\/10\/108401","DOI":"10.1088\/0256-307X\/31\/10\/108401"},{"key":"2","unstructured":"[2] C. Berrached, D. Bouw, M. Camiade and D. Barataud: IEEE EUMIC (2013) 424."},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] H. Shigematsu, Y. Lnoue, A. Akasegawa, M. Yamada, S. Masuda, Y. Kamada, A. Yamada, A. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, K. Joshin and N. Hara: IEEE\/MTT-S IMS (2009) 1265. DOI:10.1109\/MWSYM.2009.5165934","DOI":"10.1109\/MWSYM.2009.5165934"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] H. Maehara, H. Uchida, N. Kosaka, E. Kuwata, K. Yamanaka, J. Nishihara, K. Kawashima and M. Nakayama: IEEE APMC (2012) 358. DOI:10.1109\/APMC.2012.6421597","DOI":"10.1109\/APMC.2012.6421597"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] Y. Hao, L. Yang, X. H. Ma, J. G. Ma, M. Y. Cao, C. Y. Pan, C. Wang and J. C. Zhang: IEEE Electron Device Lett. <b>32<\/b> (2011) 626. DOI:10.1109\/LED.2011.2118736","DOI":"10.1109\/LED.2011.2118736"},{"key":"6","unstructured":"[6] S. Cripps: <i>RF Power Amplifier for Wireless Communications<\/i> (Houce, Norwood, 2006) 2nd ed. 23."},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] M. Y. Cao, Y. Lu, J. X. Wei, Y. H. Chen, W. J. Li, J. X. Zheng, X. H. Ma and Y. Hao: Chin. Phys. B <b>23<\/b> (2014) 087201. DOI:10.1088\/1674-1056\/23\/8\/087201","DOI":"10.1088\/1674-1056\/23\/8\/087201"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] R. Giofre, L. Piazzon, P. Colantonio and F. Giannini: IEEE Microw. Wireless Compon. Lett. <b>24<\/b> (2014) 775. DOI:10.1109\/LMWC.2014.2345193","DOI":"10.1109\/LMWC.2014.2345193"},{"key":"9","unstructured":"[9] K. Qiao and Z. X. Tang: Microwave J. <b>57<\/b> (2014) 114."},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] F. Javier, D. Tena, M. Patino, J. Manuel and D. Madueno: IEEE Trans. Microw. Theory Techn. <b>61<\/b> (2013) 3712. DOI:10.1109\/TMTT.2013.2279366","DOI":"10.1109\/TMTT.2013.2279366"},{"key":"11","unstructured":"[11] K. Bathich, M. T. Arnous and G. Boeck: IEEE EUMC (2013) 279."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/12\/6\/12_12.20150172\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T06:33:28Z","timestamp":1498199608000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/12\/6\/12_12.20150172\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015]]},"references-count":11,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2015]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.12.20150172","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015]]}}}