{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,6]],"date-time":"2022-04-06T04:17:45Z","timestamp":1649218665030},"reference-count":16,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"24","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2015]]},"DOI":"10.1587\/elex.12.20150943","type":"journal-article","created":{"date-parts":[[2015,12,8]],"date-time":"2015-12-08T10:05:39Z","timestamp":1449569139000},"page":"20150943-20150943","source":"Crossref","is-referenced-by-count":1,"title":["The characteristics of fluorinated gate dielectric AlGaN\/GaN MIS-HEMT"],"prefix":"10.1587","volume":"12","author":[{"given":"Minhan","family":"Mi","sequence":"first","affiliation":[{"name":"Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yunlong","family":"He","sequence":"additional","affiliation":[{"name":"Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bin","family":"Hou","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Meng","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zuochen","family":"Shi","sequence":"additional","affiliation":[{"name":"Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peixian","family":"Li","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[{"name":"Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay and T. Palacios: IEEE Electron Device Lett. <b>32<\/b> (2011) 1525. DOI:10.1109\/LED.2011.2164613","DOI":"10.1109\/LED.2011.2164613"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] A. Crespo, M. M. Bellot, K. D. Chabak, J. K. Gillespie, G. H. Jessen, V. Miller, M. Trejo, G. D. Via, D. E. Walker, Jr., B. W. Winningham, H. E. Smith, T. A. Cooper, X. Gao and S. Guo: IEEE Electron Device Lett. <b>31<\/b> (2010) 2. DOI:10.1109\/LED.2009.2034875","DOI":"10.1109\/LED.2009.2034875"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra and P. Parikh: IEEE Electron Device Lett. <b>25<\/b> (2004) 117. DOI:10.1109\/LED.2003.822667","DOI":"10.1109\/LED.2003.822667"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] K. J. Chen and C. H. Zhou: Phys. Status Solidi A <b>208<\/b> (2011) 434. DOI:10.1002\/pssa.201000631","DOI":"10.1002\/pssa.201000631"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] M. H. Mi, K. Zhang, X. Chen, Z. S. Zhao, C. Wang, J. C. Zhang, X. H. Ma and Y. Hao: Chin. Phys. B <b>23<\/b> (2014) 077304. DOI:10.1088\/1674-1056\/23\/7\/077304","DOI":"10.1088\/1674-1056\/23\/7\/077304"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] W. Saito, Y. Tashiharu, M. Kuraguchi and I. Omura: IEEE Trans. Electron Devices <b>53<\/b> (2006) 356. DOI:10.1109\/TED.2005.862708","DOI":"10.1109\/TED.2005.862708"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] L. Y. Su, F. Lee and J. J. Huang: IEEE Trans. Electron Devices <b>61<\/b> (2014) 460. DOI:10.1109\/TED.2013.2294337","DOI":"10.1109\/TED.2013.2294337"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] T. Inoue, T. Nakayama, Y. Ando, M. Kosaki, H. Miwa, K. Hirata, T. Uemura and H. Miyamoto: IEEE Trans. Electron Devices <b>55<\/b> (2008) 483. DOI:10.1109\/TED.2007.912367","DOI":"10.1109\/TED.2007.912367"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] G. W. Li, T. Zimmermann, Y. Cao, C. X. Lian, X. Xing, R. H. Wang, P. Fay, H. G. Xing and D. Jena: IEEE Electron Device Lett. <b>31<\/b> (2010) 954. DOI:10.1109\/LED.2010.2052912","DOI":"10.1109\/LED.2010.2052912"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] Y. D. Du, W. H. Han, W. Yan and F. H. Yang: Chin. Phys. Lett. <b>31<\/b> (2014) 048501. DOI:10.1088\/0256-307X\/31\/4\/048501","DOI":"10.1088\/0256-307X\/31\/4\/048501"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] S. L. Zhao, J. S. Xue, P. Zhang, B. Hou, J. Luo, X. J. Fan, J. C. Zhang, X. H. Ma and Y. Hao: Appl. Phys. Express <b>7<\/b> (2014) 071002. DOI:10.7567\/APEX.7.071002","DOI":"10.7567\/APEX.7.071002"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] P. D. Ye, B. Yang, K. K. Ng and J. Bude: Appl. Phys. Lett. <b>86<\/b> (2005) 063501. DOI:10.1063\/1.1861122","DOI":"10.1063\/1.1861122"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] C. Chen, X. Z. Liu, B. L. Tian, P. Shu, Y. F. Chen, W. L. Zhang, H. C. Jiang and Y. R. Li: IEEE Electron Device Lett. <b>32<\/b> (2011) 1373. DOI:10.1109\/LED.2011.2162933","DOI":"10.1109\/LED.2011.2162933"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] S. Yang, S. Huang, M. Schnee, Q. T. Zhao, J. Schubert and K. J. Chen: IEEE Trans. Electron Devices <b>60<\/b> (2013) 3040. DOI:10.1109\/TED.2013.2277559","DOI":"10.1109\/TED.2013.2277559"},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] Y. Y. Lu, S. Yang, Q. M. Jiang, Z. K. Tang, B. K. Li and K. J. Chen: Phys. Status Solidi <b>10<\/b> (2013) 1397. DOI:10.1002\/pssc.201300270","DOI":"10.1002\/pssc.201300270"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] S. L. Zhao, K. Zhang, W. Ha, Y. H. Chen, P. Zhang, J. C. Zhang, X. H. Ma and Y. Hao: Appl. Phys. Lett. <b>103<\/b> (2013) 212106. DOI:10.1063\/1.4832482","DOI":"10.1063\/1.4832482"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/12\/24\/12_12.20150943\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,4,1]],"date-time":"2017-04-01T05:17:59Z","timestamp":1491023879000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/12\/24\/12_12.20150943\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015]]},"references-count":16,"journal-issue":{"issue":"24","published-print":{"date-parts":[[2015]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.12.20150943","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015]]}}}