{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,4]],"date-time":"2022-04-04T16:17:13Z","timestamp":1649089033063},"reference-count":14,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2016]]},"DOI":"10.1587\/elex.13.20151028","type":"journal-article","created":{"date-parts":[[2016,1,24]],"date-time":"2016-01-24T22:08:43Z","timestamp":1453673323000},"page":"20151028-20151028","source":"Crossref","is-referenced-by-count":1,"title":["A new Multi-Dose Method for extracting source\/drain series resistances of halo-doped MOSFETs"],"prefix":"10.1587","volume":"13","author":[{"given":"Zebang","family":"Guo","sequence":"first","affiliation":[{"name":"Department of Microelectronics and Nanoelectronics, Tsinghua University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zuochang","family":"Ye","sequence":"additional","affiliation":[{"name":"Department of Microelectronics and Nanoelectronics, Tsinghua University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuejie","family":"Shi","sequence":"additional","affiliation":[{"name":"Semiconductor Manufacturing International Corp."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yan","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Microelectronics and Nanoelectronics, Tsinghua University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] Y. Taur, C. H. Wann and D. J. Frank: IEDM Tech. Dig. (1998) 789. DOI:10.1109\/IEDM.1998.746474","DOI":"10.1109\/IEDM.1998.746474"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] K. J. Kuhn: IEEE Trans. Electron Devices <b>59<\/b> (2012) 1813. DOI:10.1109\/TED.2012.2193129","DOI":"10.1109\/TED.2012.2193129"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] T. Minato and K. Sato: IEICE Electron. Express <b>11<\/b> (2014) 20142002. DOI:10.1587\/elex.11.20142002","DOI":"10.1587\/elex.11.20142002"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] G. J. Hu, C. Chang and Y. Chia: IEEE Trans. Electron Devices <b>34<\/b> (1987) 2469. DOI:10.1109\/T-ED.1987.23337","DOI":"10.1109\/T-ED.1987.23337"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] S. Biesemans, M. Hendriks, S. Kubicek and K. D. Meyer: IEEE Trans. Electron Devices <b>45<\/b> (1998) 1310. DOI:10.1109\/16.678555","DOI":"10.1109\/16.678555"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] Y. H. Chang, Y. F. Wu and C. S. Ho: EDSSC (2007) 87. DOI:10.1109\/EDSSC.2007.4450068","DOI":"10.1109\/EDSSC.2007.4450068"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] S. Severi, L. Pantisano, E. Augendre, E. S. Andres, P. Eyben and K. D. Meyer: IEEE Trans. Electron Devices <b>54<\/b> (2007) 2690. DOI:10.1109\/TED.2007.904011","DOI":"10.1109\/TED.2007.904011"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] T. Yuan, D. S. Zicherman, D. R. Lombardi, P. J. Restle, C. H. Hsu, H. I. Hanafi, M. R. Wordeman, B. Davari and G. G. Shahidi: IEEE Electron Device Lett. <b>13<\/b> (1992) 267. DOI:10.1109\/55.145049","DOI":"10.1109\/55.145049"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] J. P. Campbell, K. P. Cheung, J. S. Suehle and A. Oates: IEEE Electron Device Lett. <b>32<\/b> (2011) 1047. DOI:10.1109\/LED.2011.2158183","DOI":"10.1109\/LED.2011.2158183"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] J. S. Shin, H. Bae, E. Hong, J. Jang, D. Yun, J. Lee, D. H. Kim and D. M. Kim: Solid-State Electron. <b>72<\/b> (2012) 78. DOI:10.1016\/j.sse.2012.01.007","DOI":"10.1016\/j.sse.2012.01.007"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] R. D. Pietro, D. Venkateshvaran, A. Klug, E. J. W. List-Kratochvil, A. Facchetti, H. Sirringhaus and D. Neher: Appl. Phys. Lett. <b>104<\/b> (2014) 193501. DOI:10.1063\/1.4876057","DOI":"10.1063\/1.4876057"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] S. W. Lee: IEEE Trans. Electron Devices <b>41<\/b> (1994) 403. DOI:10.1109\/16.275227","DOI":"10.1109\/16.275227"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] S. C. Sun and J. D. Plummer: IEEE J. Solid-State Circuits <b>15<\/b> (1980) 562. DOI:10.1109\/JSSC.1980.1051439","DOI":"10.1109\/JSSC.1980.1051439"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] D. W. Lin, M. L. Cheng, S. W. Wang, C. C. Wu and M. J. Chen: IEEE Trans. Electron Devices <b>57<\/b> (2010) 890. DOI:10.1109\/TED.2010.2041508","DOI":"10.1109\/TED.2010.2041508"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/13\/3\/13_13.20151028\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T04:25:10Z","timestamp":1498278310000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/13\/3\/13_13.20151028\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016]]},"references-count":14,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2016]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.13.20151028","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016]]}}}