{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T11:54:48Z","timestamp":1648986888682},"reference-count":13,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"8","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2017]]},"DOI":"10.1587\/elex.14.20170141","type":"journal-article","created":{"date-parts":[[2017,4,5]],"date-time":"2017-04-05T20:59:54Z","timestamp":1491425994000},"page":"20170141-20170141","source":"Crossref","is-referenced-by-count":2,"title":["Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide"],"prefix":"10.1587","volume":"14","author":[{"given":"Younghwan","family":"Son","sequence":"first","affiliation":[{"name":"Semiconductor Research Center, Samsung Electronics"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yoon","family":"Kim","sequence":"additional","affiliation":[{"name":"Dept. of Nanoenergy Engineering, Pusan National University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Myounggon","family":"Kang","sequence":"additional","affiliation":[{"name":"Dept. of Electronics Engineering, Korea National University of Transportation"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] J. Robertson: \u201cInterfaces and defects of high-K oxides on silicon,\u201d Solid-State Electron. <b>49<\/b> (2005) 283 (DOI: 10.1016\/j.sse.2004.11.011).","DOI":"10.1016\/j.sse.2004.11.011"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] G. D. Wilket al.: \u201cHigh-k gate dielectrics: Current status and materials properties considerations,\u201d J. Appl. Phys. <b>89<\/b> (2001) 5243 (DOI: 10.1063\/1.1361065).","DOI":"10.1063\/1.1361065"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] M. Copelet al.: \u201cStructure and stability of ultrathin zirconium oxide layers on Si(001),\u201d Appl. Phys. Lett. <b>76<\/b> (2000) 436 (DOI: 10.1063\/1.125779).","DOI":"10.1063\/1.125779"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] C. Bergonzoni and G. D. Libera: \u201cPhysical characterization of hot-electron induced MOSFET degradation through an improved approach to the charge pumping technique,\u201d IEEE Trans. Electron Devices <b>39<\/b> (1992) 1895 (DOI: 10.1109\/16.144681).","DOI":"10.1109\/16.144681"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] G. V. Groesenekenet al.: \u201cObservation of single interface traps in submicron MOSFET\u2019s by charge pumping,\u201d IEEE Trans. Electron Devices <b>43<\/b> (1996) 940 (DOI: 10.1109\/16.502127).","DOI":"10.1109\/16.502127"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] R. E. Paulsen and M. H. White: \u201cTheory and application of charge pumping for the characterization of Si-SiO2 interface and near-interface oxide traps,\u201d IEEE Trans. Electron Devices <b>41<\/b> (1994) 1213 (DOI: 10.1109\/16.293349).","DOI":"10.1109\/16.293349"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] J. Wu, <i>et al.<\/i>: \u201cTrap-assisted tunneling current through ultra-thin oxide,\u201d IRPS Tech. Dig. (1999) 389 (DOI: 10.1109\/RELPHY.1999.761644).","DOI":"10.1109\/RELPHY.1999.761644"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] D. M. Fleetwood: \u201cBorder traps in MOS devices,\u201d IEEE Trans. Nucl. Sci. <b>39<\/b> (1992) 269 (DOI: 10.1109\/23.277495).","DOI":"10.1109\/23.277495"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] S. D. Ganichevet al.: \u201cCarrier tunneling in high-frequency electric fields,\u201d Phys. Rev. Lett. <b>80<\/b> (1998) 2409 (DOI: 10.1103\/PhysRevLett.80.2409).","DOI":"10.1103\/PhysRevLett.80.2409"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] Y. Sonet al.: \u201cCharacterization of near-interface oxide trap density in nitrided oxides for nanoscale MOSFET applications,\u201d IEEE Trans. Nanotechnol. <b>8<\/b> (2009) 654 (DOI: 10.1109\/TNANO.2008.2009760).","DOI":"10.1109\/TNANO.2008.2009760"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] S. Kar: \u201cUltimate gate oxide thinness set by recombination-tunneling of electrons via Si\u2013SiO2 interface traps,\u201d J. Appl. Phys. <b>88<\/b> (2000) 2693 (DOI: 10.1063\/1.1287114).","DOI":"10.1063\/1.1287114"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] G. Van den Boschet al.: \u201cOn the geometric component of charge-pumping current in MOSFET\u2019s,\u201d IEEE Electron Device Lett. <b>14<\/b> (1993) 107 (DOI: 10.1109\/55.215126).","DOI":"10.1109\/55.215126"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] Y. Sonet al.: \u201cCharacterization of border trap density with the multifrequency charge pumping technique in dual-layer gate oxide,\u201d IEEE Trans. Electron Devices <b>58<\/b> (2011) 2752 (DOI: 10.1109\/TED.2011.2157931).","DOI":"10.1109\/TED.2011.2157931"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/8\/14_14.20170141\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,25]],"date-time":"2017-06-25T10:18:01Z","timestamp":1498385881000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/8\/14_14.20170141\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017]]},"references-count":13,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2017]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.14.20170141","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017]]}}}