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Weiet al.: \u201cComposite-collector InGaAs\/InP double heterostructure bipolar transistors with current-gain cutoff frequency of 242 GHz.,\u201d Chin. Phys. Lett. <b>26<\/b> (2009) 038502 (DOI: 10.1088\/0256-307X\/26\/3\/038502).","DOI":"10.1088\/0256-307X\/26\/3\/038502"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] B. Niuet al.: \u201cFabrication and small signal modeling of 0.5 \u00b5m InGaAs\/InP DHBT demonstrating FT\/Fmax of 350\/532 GHz,\u201d Microw. Opt. Technol. Lett. <b>57<\/b> (2015) 2774 (DOI: 10.1002\/mop.29433).","DOI":"10.1002\/mop.29433"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] J. Godin, <i>et al.<\/i>: \u201cSubmicron InP DHBT technology for high-speed high-swing mixed-signal ICs,\u201d Compound Semiconductor Integrated Circuits Symposium, (2008) 1 (DOI: 10.1109\/CSICS.2008.28).","DOI":"10.1109\/CSICS.2008.28"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] W. 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