{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,2]],"date-time":"2022-04-02T03:51:38Z","timestamp":1648871498283},"reference-count":10,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"14","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2017]]},"DOI":"10.1587\/elex.14.20170611","type":"journal-article","created":{"date-parts":[[2017,7,4]],"date-time":"2017-07-04T22:09:37Z","timestamp":1499206177000},"page":"20170611-20170611","source":"Crossref","is-referenced-by-count":0,"title":["Design of Psub-SMPD and DNW-SMPD fabricated in a standard 0.18-\u00b5m CMOS process"],"prefix":"10.1587","volume":"14","author":[{"given":"Rong","family":"Wang","sequence":"first","affiliation":[{"name":"Institute of RF- & OEICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chen","family":"Fan","sequence":"additional","affiliation":[{"name":"Institute of RF- & OEICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhi-Gong","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of RF- & OEICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] T. S.-C. Kaoet al.: \u201cA 5-Gbit\/s CMOS optical receiver with integrated spatially modulated light detector and equalization,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>57<\/b> (2010) 2844 (DOI: 10.1109\/TCSI.2010.2050231).","DOI":"10.1109\/TCSI.2010.2050231"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] S.-H. Huanget al.: \u201cA 10-Gb\/s OEIC with meshed spatially-modulated photo detector in 0.18-m CMOS technology,\u201d IEEE J. Solid-State Circuits <b>46<\/b> (2011) 1158 (DOI: 10.1109\/JSSC.2011.2116430).","DOI":"10.1109\/JSSC.2011.2116430"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] D. Leeet al.: \u201cAn 8.5-Gb\/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer,\u201d IEEE J. Solid-State Circuits <b>45<\/b> (2010) 2861 (DOI: 10.1109\/JSSC.2010.2077050).","DOI":"10.1109\/JSSC.2010.2077050"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] M. J. Lee and W. Y. Choi: \u201cArea-dependent photodetection frequency response characterization of silicon avalanche photodetectors fabricated with standard CMOS technology,\u201d IEEE Trans. Electron Devices <b>60<\/b> (2013) 998 (DOI: 10.1109\/TED.2013.2240684).","DOI":"10.1109\/TED.2013.2240684"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] K. Iiyamaet al.: \u201cSilicon lateral avalanche photodiodes fabricated by standard 0.18 \u00b5m CMOS process,\u201d IEICE Trans. Electron. <b>E91-C<\/b> (2008) 1820 (DOI: 10.1093\/ietele\/e91-c.11.1820).","DOI":"10.1093\/ietele\/e91-c.11.1820"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] M. Atefet al.: \u201cAvalanche double photodiode in 40-nm standard CMOS technology,\u201d IEEE J. Quantum Electron. <b>49<\/b> (2013) 350 (DOI: 10.1109\/JQE.2013.2246546).","DOI":"10.1109\/JQE.2013.2246546"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] H.-Y. Junget al.: \u201cA high-speed CMOS integrated optical receiver with an under-damped TIA,\u201d IEEE Photonics Technol. Lett. <b>27<\/b> (2015) 1367 (DOI: 10.1109\/LPT.2015.2421501).","DOI":"10.1109\/LPT.2015.2421501"},{"key":"8","unstructured":"[8] Q. Panet al.: \u201cA 0.5-V P-well\/deep N-well photodetector in 65-nm CMOS for monolithic 850-nm optical receivers,\u201d IEEE Photonics Technol. Lett. <b>26<\/b> (2014) 1184 (DOI: 10.1109\/LPT.2014.2317715)."},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] Y. Dong and K. W. Martin: \u201cA 4-Gbps POF receiver using linear equalizer with multi-shunt-shunt feedbacks in 65-nm CMOS,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>60<\/b> (2013) 617 (DOI: 10.1109\/TCSII.2013.2273839).","DOI":"10.1109\/TCSII.2013.2273839"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] J.-S. Younet al.: \u201cLow-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal\u2013oxide semiconductor technology,\u201d IET Circuits Dev. Syst. <b>9<\/b> (2015) 221 (DOI: 10.1049\/iet-cds.2014.0250).","DOI":"10.1049\/iet-cds.2014.0250"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/14\/14_14.20170611\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,7,29]],"date-time":"2017-07-29T04:06:54Z","timestamp":1501301214000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/14\/14_14.20170611\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017]]},"references-count":10,"journal-issue":{"issue":"14","published-print":{"date-parts":[[2017]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.14.20170611","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017]]}}}