{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,1]],"date-time":"2024-02-01T13:44:02Z","timestamp":1706795042472},"reference-count":10,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"15","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2017]]},"DOI":"10.1587\/elex.14.20170674","type":"journal-article","created":{"date-parts":[[2017,7,19]],"date-time":"2017-07-19T22:07:52Z","timestamp":1500502072000},"page":"20170674-20170674","source":"Crossref","is-referenced-by-count":4,"title":["A novel complementary push-push frequency doubler with negative resistor conversion gain enhancement"],"prefix":"10.1587","volume":"14","author":[{"given":"Yang","family":"Liu","sequence":"first","affiliation":[{"name":"Institute of RF-& OE-ICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhiqun","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of RF-& OE-ICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hao","family":"Gao","sequence":"additional","affiliation":[{"name":"Institute of RF-& OE-ICs, Southeast University"},{"name":"Eindhoven University of Technology, Delft University of Technology"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qin","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of RF-& OE-ICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhigong","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of RF-& OE-ICs, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","unstructured":"[1] M. Ferndahl, <i>et al.<\/i>: \u201c40 and 60 GHz frequency doublers in 90-nm CMOS,\u201d IEEE MTT-S Int. Dig. <b>1<\/b> (2004) 179 (DOI: 10.1109\/MWSYM.2004.1335837)."},{"key":"2","unstructured":"[2] J. Chen, <i>et al.<\/i>: \u201cA 50\u201370 GHz frequency doubler in 90 nm CMOS,\u201d IEEE MTT-S Int. Microw. Workshop Series on Millim. Wave Wirel. Tech. and Appl. (IMWS) (2012) 1 (DOI: 10.1109\/IMWS2.2012.6338190)."},{"key":"3","unstructured":"[3] K. Y. Lin, <i>et al.<\/i>: \u201cA 14\u201323 GHz CMOS MMIC distributed doubler with a 22-dB fundamental rejection,\u201d IEEE MTT-S Int. Microw. Symp. Dig. (2008) 1477 (DOI: 10.1109\/MWSYM.2008.4633059)."},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] K. Y. Linet al.: \u201cA K-band CMOS distributed doubler with current-reuse technique,\u201d IEEE Microw. Wireless Compon. Lett. <b>19<\/b> (2009) 308 (DOI: 10.1109\/LMWC.2009.2017598).","DOI":"10.1109\/LMWC.2009.2017598"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] Y. A. Laiet al.: \u201cCompact doubler with simple harmonic suppression and gain-compensation functions,\u201d IEEE Microw. Wireless Compon. Lett. <b>21<\/b> (2011) 371 (DOI: 10.1109\/LMWC.2011.2152383).","DOI":"10.1109\/LMWC.2011.2152383"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] T. Y. Yang and H. K. Chiou: \u201cA 25\u201375 GHz miniature double balanced frequency doubler in 0.18-um CMOS technology,\u201d IEEE Microw. Wireless Compon. Lett. <b>18<\/b> (2008) 275 (DOI: 10.1109\/LMWC.2008.918931).","DOI":"10.1109\/LMWC.2008.918931"},{"key":"7","unstructured":"[7] B. J. Huang, <i>et al.<\/i>: \u201cA 40-to-76 GHz balanced distributed doubler in 0.13 um CMOS technology,\u201d European Microw. Integrated Circuit Conf. (2008) 17 (DOI: 10.1109\/EMICC.2008.4772217)."},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] P. H. Tsaiet al.: \u201cBroadband balanced frequency doublers with fundamental rejection enhancement using a novel compensated marchand balun,\u201d IEEE Trans. Microw. Theory Techn. <b>61<\/b> (2013) 1913 (DOI: 10.1109\/TMTT.2013.2255618).","DOI":"10.1109\/TMTT.2013.2255618"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] J. K. Liet al.: \u201cA 27\u201341 GHz frequency doubler with conversio gain of 12 dB and PAE of 16.9,\u201d IEEE Microw. Wireless Compon. Lett. <b>22<\/b> (2012) 427 (DOI: 10.1109\/LMWC.2012.2205228).","DOI":"10.1109\/LMWC.2012.2205228"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] A. Y. K. Chenet al.: \u201cA 36\u201380 GHz high gain millimeter-wave double-balanced active frequency doubler in SiGe BiCMOS,\u201d IEEE Microw. Wireless Compon. Lett. <b>19<\/b> (2009) 572 (DOI: 10.1109\/LMWC.2009.2027084).","DOI":"10.1109\/LMWC.2009.2027084"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/15\/14_14.20170674\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,8,12]],"date-time":"2017-08-12T04:01:49Z","timestamp":1502510509000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/15\/14_14.20170674\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017]]},"references-count":10,"journal-issue":{"issue":"15","published-print":{"date-parts":[[2017]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.14.20170674","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017]]}}}