{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,4,25]],"date-time":"2023-04-25T20:20:23Z","timestamp":1682454023827},"reference-count":34,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"20","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2017]]},"DOI":"10.1587\/elex.14.20170707","type":"journal-article","created":{"date-parts":[[2017,10,3]],"date-time":"2017-10-03T22:17:31Z","timestamp":1507069051000},"page":"20170707-20170707","source":"Crossref","is-referenced-by-count":2,"title":["An embedded gate graphene field effect transistor with natural Al oxidization dielectrics and its application to frequency doubler"],"prefix":"10.1587","volume":"14","author":[{"given":"Rongzhou","family":"Zeng","sequence":"first","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}]},{"given":"Ping","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}]},{"given":"Yiwen","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}]},{"given":"Gang","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}]},{"given":"Qingwei","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}]},{"given":"Yongbo","family":"Liao","sequence":"additional","affiliation":[{"name":"School of Energy Science and Engineering, University of Electronic Science and Technology of China"}]},{"given":"Xiaodong","family":"Xie","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] F. Schwierz: \u201cGraphene transistors,\u201d Nat. Nanotechnol. <b>5<\/b> (2010) 487 (DOI: 10.1038\/nnano.2010.89).","DOI":"10.1038\/nnano.2010.89"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] Y. Wuet al.: \u201cGraphene electronics: Materials, devices, and circuits,\u201d Proc. IEEE <b>101<\/b> (2013) 1620 (DOI: 10.1109\/JPROC.2013.2260311).","DOI":"10.1109\/JPROC.2013.2260311"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] F. Schwierz: \u201cGraphene transistors: Status, prospects, and problems,\u201d Proc. IEEE <b>101<\/b> (2013) 1567 (DOI: 10.1109\/JPROC.2013.2257633).","DOI":"10.1109\/JPROC.2013.2257633"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] K. S. Novoselovet al.: \u201cA roadmap for graphene,\u201d Nature <b>490<\/b> (2012) 192 (DOI: 10.1038\/nature11458).","DOI":"10.1038\/nature11458"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] H. 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IEEE <b>101<\/b> (2013) 1603 (DOI: 10.1109\/JPROC.2013.2258651).","DOI":"10.1109\/JPROC.2013.2258651"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/20\/14_14.20170707\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,10,28]],"date-time":"2017-10-28T03:56:59Z","timestamp":1509163019000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/14\/20\/14_14.20170707\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017]]},"references-count":34,"journal-issue":{"issue":"20","published-print":{"date-parts":[[2017]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.14.20170707","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017]]}}}