{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T10:27:14Z","timestamp":1780050434368,"version":"3.53.1"},"reference-count":13,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"9","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2018]]},"DOI":"10.1587\/elex.15.20180230","type":"journal-article","created":{"date-parts":[[2018,4,10]],"date-time":"2018-04-10T22:15:35Z","timestamp":1523398535000},"page":"20180230-20180230","source":"Crossref","is-referenced-by-count":9,"title":["A Ka band CMOS differential LNA with 25 dB gain using neutralized bootstrapped cascode amplifier"],"prefix":"10.1587","volume":"15","author":[{"given":"Bowen","family":"Ding","sequence":"first","affiliation":[{"name":"Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shengyue","family":"Yuan","sequence":"additional","affiliation":[{"name":"Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chen","family":"Zhao","sequence":"additional","affiliation":[{"name":"Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Tao","sequence":"additional","affiliation":[{"name":"Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoyun","family":"Li","sequence":"additional","affiliation":[{"name":"Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tong","family":"Tian","sequence":"additional","affiliation":[{"name":"Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] B.-J. Huang, <i>et al.<\/i>: \u201cMillimeter-wave low power and miniature CMOS multicascode low-noise amplifiers with noise reduction topology,\u201d IEEE Trans. Microw. Theory Techn. <b>57<\/b> (2009) 3049 (DOI: 10.1109\/TMTT.2009.2033238).","DOI":"10.1109\/TMTT.2009.2033238"},{"key":"2","unstructured":"[2] B. Razavi: <i>RF Microelectronics<\/i> (Publishing House of Electronics Industry, Beijing, 2012) 2nd ed. 53."},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] D. Zhao and P. Reynaert: \u201cA 40-nm CMOS E-band 4-way power amplifier with neutralized bootstrapped cascode amplifier and optimum passive circuits,\u201d IEEE Trans. Microw. Theory Techn. <b>63<\/b> (2015) 4083 (DOI: 10.1109\/TMTT.2015.2496341).","DOI":"10.1109\/TMTT.2015.2496341"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] W. L. Chan and J. R. Long: \u201cA 58\u201365 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply,\u201d IEEE J. Solid-State Circuits <b>45<\/b> (2010) 554 (DOI: 10.1109\/JSSC.2009.2039274).","DOI":"10.1109\/JSSC.2009.2039274"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] H. Wu, <i>et al.<\/i>: \u201cA blocker-tolerant current mode 60-GHz receiver with 7.5-GHz bandwidth and 3.8-dB minimum NF in 65-nm CMOS,\u201d IEEE Trans. Microw. Theory Techn. <b>63<\/b> (2015) 1053 (DOI: 10.1109\/TMTT.2015.2393310).","DOI":"10.1109\/TMTT.2015.2393310"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] D. Woods: \u201cReappraisal of the unconditional stability criteria for active 2-port networks in terms of S parameters,\u201d IEEE Trans. Circuits Syst. <b>23<\/b> (1976) 73 (DOI: 10.1109\/TCS.1976.1084179).","DOI":"10.1109\/TCS.1976.1084179"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] K.-J. Sun, <i>et al.<\/i>: \u201cA 10.8-GHz CMOS low-noise amplifier using parallel-resonant inductor,\u201d 2007 IEEE\/MTT-S International Microwave Symposium (2007) 1795 (DOI: 10.1109\/MWSYM.2007.380096).","DOI":"10.1109\/MWSYM.2007.380096"},{"key":"8","unstructured":"[8] Fundamentals of RF and Microwave Noise Figure Measurements: Application note (2015) http:\/\/literature.cdn.keysight.com\/litweb\/pdf\/5952-8255E.pdf."},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] A. Amer, <i>et al.<\/i>: \u201cA low-power wideband CMOS LNA for WiMAX,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>54<\/b> (2007) 4 (DOI: 10.1109\/TCSII.2006.884113).","DOI":"10.1109\/TCSII.2006.884113"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] R. A. Pucel, <i>et al.<\/i>: \u201cSignal and noise properties of gallium arsenide field effect transistors,\u201d Adv. Electron. Electron Phys. <b>38<\/b> (1975) 195 (DOI: 10.1016\/S0065-2539(08)61205-6).","DOI":"10.1016\/S0065-2539(08)61205-6"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] M. Varonen, <i>et al.<\/i>: \u201cMillimeter-wave integrated circuits in 65-nm CMOS,\u201d IEEE J. Solid-State Circuits <b>43<\/b> (2008) 1991 (DOI: 10.1109\/JSSC.2008.2001902).","DOI":"10.1109\/JSSC.2008.2001902"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] S. Wang and B.-Z. Huang: \u201cK-band CMOS LNA with interference-rejection using Q-enhanced notch filter,\u201d IEICE Electron. Express <b>9<\/b> (2012) 938 (DOI: 10.1587\/elex.9.938).","DOI":"10.1587\/elex.9.938"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] Z. Liu, <i>et al.<\/i>: \u201cA K-band low noise amplifier with on-chip baluns in 90 nm CMOS,\u201d 2015 IEEE International Symposium on Radio-Frequency Integration Technology (2015) 241 (DOI: 10.1109\/RFIT.2015.7377947).","DOI":"10.1109\/RFIT.2015.7377947"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/15\/9\/15_15.20180230\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,5,12]],"date-time":"2018-05-12T04:20:55Z","timestamp":1526098855000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/15\/9\/15_15.20180230\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018]]},"references-count":13,"journal-issue":{"issue":"9","published-print":{"date-parts":[[2018]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.15.20180230","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018]]}}}