{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,25]],"date-time":"2026-01-25T01:28:01Z","timestamp":1769304481337,"version":"3.49.0"},"reference-count":21,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"14","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2018]]},"DOI":"10.1587\/elex.15.20180502","type":"journal-article","created":{"date-parts":[[2018,7,1]],"date-time":"2018-07-01T18:19:46Z","timestamp":1530469186000},"page":"20180502-20180502","source":"Crossref","is-referenced-by-count":9,"title":["TCAD analysis and modeling for NBTI mechanism in FinFET transistors"],"prefix":"10.1587","volume":"15","author":[{"given":"Alfonso","family":"Herrera-Moreno","sequence":"first","affiliation":[{"name":"Universidad Veracruzana"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jos\u00e9 Luis","family":"Garc\u00eda-Gervacio","sequence":"additional","affiliation":[{"name":"Universidad Veracruzana"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H\u00e9ctor","family":"Villacorta-Minaya","sequence":"additional","affiliation":[{"name":"Polytechnic University of Aguascalientes"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H\u00e9ctor","family":"V\u00e1zquez-Leal","sequence":"additional","affiliation":[{"name":"Universidad Veracruzana"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] T. T. Kim and Z. H. Kong: \u201cImpacts of nbti\/pbti on sram vmin and design techniques for sram vmin improvement,\u201d International SoC Design Conference (2011) (DOI: 10.1109\/ISOCC.2011.6138672).","DOI":"10.1109\/ISOCC.2011.6138672"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] R. A. L. Reis, <i>et al.<\/i>: <i>Circuit Design for Reliability<\/i> (Springer, 2015).","DOI":"10.1007\/978-1-4614-4078-9"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] S. Ramey, <i>et al.<\/i>: \u201cIntrinsic transistor reliability improvements from 22 nm tri-gate technology,\u201d IEEE International Reliability Physics Symposium (2013) (DOI: 10.1109\/IRPS.2013.6532017).","DOI":"10.1109\/IRPS.2013.6532017"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] T. Grasser: <i>Bias Temperature Instability for Devices and Circuits<\/i> (Springer, 2014).","DOI":"10.1007\/978-1-4614-7909-3"},{"key":"5","unstructured":"[5] H. Kukner, <i>et al.<\/i>: \u201cBti reliability from planar to finfet nodes: Will the next node be more or less reliable?\u201d The 3rd Workshop on Manufacturable and Dependable Multicore Architectures at Nanoscale (2014) 11."},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] I. Agbo, <i>et al.<\/i>: \u201cComparative analysis of rd and atomistic trap-based bti models on sram sense amplifier,\u201d 10th International Conference on Design &amp; Technology of Integrated Systems in Nanoscale Era (DTIS) (2015) (DOI: 10.1109\/DTIS.2015.7127371).","DOI":"10.1109\/DTIS.2015.7127371"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] S. Khan, <i>et al.<\/i>: \u201cBias temperature instability analysis of finfet based sram cells,\u201d Design, Automation &amp; Test in Europe Conference &amp; Exhibition (2014) (DOI: 10.7873\/DATE.2014.044).","DOI":"10.7873\/DATE.2014.044"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] P. Weckx, <i>et al.<\/i>: \u201cDefect-based methodology for workload-dependent circuit lifetime projections - application to sram,\u201d IEEE International Reliability Physics Symposium (IRPS) (2013) (DOI: 10.1109\/IRPS.2013.6531974).","DOI":"10.1109\/IRPS.2013.6531974"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] T. Grasser, <i>et al.<\/i>: \u201cA two-stage model for negative bias temperature instability,\u201d IEEE International Reliability Physics Symposium (2009) (DOI: 10.1109\/IRPS.2009.5173221).","DOI":"10.1109\/IRPS.2009.5173221"},{"key":"10","unstructured":"[10] Synopsys: Simulation of PMOS degradation with two-stage NBTI model, TCAD Sentaurus Application Note Version E-2010.12 (Synopsys, 2011)."},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] V. Huard, <i>et al.<\/i>: \u201cNew characterization and modeling approach for nbti degradation from transistor to product level,\u201d IEEE International in Electron Devices Meeting (2007) 797 (DOI: 10.1109\/IEDM.2007.4419068).","DOI":"10.1109\/IEDM.2007.4419068"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] G. Groeseneken, <i>et al.<\/i>: \u201cReliability issues in mugfet nanodevices,\u201d IEEE International Reliability Physics Symposium (2008) (DOI: 10.1109\/RELPHY.2008.4558863).","DOI":"10.1109\/RELPHY.2008.4558863"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] P. Packan, <i>et al.<\/i>: \u201cHigh performance hi-k+ metal gate strain enhanced transistors on (110) silicon,\u201d IEEE International in Electron Devices Meeting (IEDM) (2008) (DOI: 10.1109\/IEDM.2008.4796614).","DOI":"10.1109\/IEDM.2008.4796614"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] J. Jeon, <i>et al.<\/i>: \u201cInvestigation of electrothermal behaviors of 5-nm bulk FinFET,\u201d IEEE Trans. Electron Devices <b>64<\/b> (2017) 5284 (DOI: 10.1109\/TED.2017.2766214).","DOI":"10.1109\/TED.2017.2766214"},{"key":"15","unstructured":"[15] Synopsys: Three-dimensional Simulation of 14\/16 nm FinFETs with Round Fin Corners and Tapered Fin Shape (Synopsys, 2016)."},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] J. B. Velamala, <i>et al.<\/i>: \u201cAging statistics based on trapping\/detrapping: Silicon evidence, modeling and long-term prediction,\u201d IEEE International Reliability Physics Symposium (2012) (DOI: 10.1109\/IRPS.2012.6241795).","DOI":"10.1109\/IRPS.2012.6241795"},{"key":"17","unstructured":"[17] Seyab and S. Hamdioui, <i>et al.<\/i>: \u201cNBTI modeling in the framework of temperature variation,\u201d Proc. Conference on DATE (2010) 283 (DOI: 10.1109\/DATE.2010.5457196)."},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] H. Luo, <i>et al.<\/i>: \u201cModeling of PMOS NBTI effect considering temperature variation,\u201d 8th Int. Symp. on Quality Electronic Design (2007) 139 (DOI: 10.1109\/ISQED.2007.104).","DOI":"10.1109\/ISQED.2007.104"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] Y.-H. Lee, <i>et al.<\/i>: \u201cModeling of BTI-aging VT stability for advanced planar and FinFET SRAM reliability,\u201d International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2017) 85 (DOI: 10.23919\/SISPAD.2017.8085270).","DOI":"10.23919\/SISPAD.2017.8085270"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] T. Grasser, <i>et al.<\/i>: \u201cThe universality of NBTI relaxation and its implications for modeling and characterization,\u201d IEEE International Reliability Physics Symposium (2007) 268 (DOI: 10.1109\/RELPHY.2007.369904).","DOI":"10.1109\/RELPHY.2007.369904"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] S. Ramey, <i>et al.<\/i>: \u201cBTI recovery in 22 nm tri-gate technology,\u201d IEEE International Reliability Physics Symposium (2014) (DOI: 10.1109\/IRPS.2014.6861180).","DOI":"10.1109\/IRPS.2014.6861180"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/15\/14\/15_15.20180502\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,7,28]],"date-time":"2018-07-28T00:17:35Z","timestamp":1532737055000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/15\/14\/15_15.20180502\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018]]},"references-count":21,"journal-issue":{"issue":"14","published-print":{"date-parts":[[2018]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.15.20180502","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018]]}}}