{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,16]],"date-time":"2026-05-16T15:01:49Z","timestamp":1778943709136,"version":"3.51.4"},"reference-count":14,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"23","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2018]]},"DOI":"10.1587\/elex.15.20180946","type":"journal-article","created":{"date-parts":[[2018,11,13]],"date-time":"2018-11-13T17:48:27Z","timestamp":1542131307000},"page":"20180946-20180946","source":"Crossref","is-referenced-by-count":2,"title":["A high linearity, 8-GSa\/s track-and-hold amplifier in GaAs HBT technology"],"prefix":"10.1587","volume":"15","author":[{"given":"Shaojun","family":"Li","sequence":"first","affiliation":[{"name":"School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongliang","family":"Lv","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yimen","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuming","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Wu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Muhammad","family":"Asif","sequence":"additional","affiliation":[{"name":"Qurtuba University of Science and IT, D.I. KPK"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] Q. Liu, <i>et al.<\/i>: \u201cA 1 GS\/s 11 bit SAR-assisted pipeline ADC with 59 dB SNDR in 65 nm CMOS,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>65<\/b> (2018) 1164 (DOI: 10.1109\/TCSII.2018.2814581).","DOI":"10.1109\/TCSII.2018.2814581"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] Y.-A. Lin, <i>et al.<\/i>: \u201cA 27-GHz 45-dB SFDR track-and-hold amplifier using modified darlington amplifier and cascoded SEF in 0.18-\u00b5m SiGe process,\u201d IEEE MTT-S International Microwave Symposium (IMS) (2017) 137 (DOI: 10.1109\/MWSYM.2017.8058869).","DOI":"10.1109\/MWSYM.2017.8058869"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] J. C. Jensen and L. E. Larson: \u201cA broadband 10-GHz track-and-hold in Si\/SiGe HBT technology,\u201d IEEE J. Solid-State Circuits <b>36<\/b> (2001) 325 (DOI: 10.1109\/4.910470).","DOI":"10.1109\/4.910470"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] S. Shahramian, <i>et al.<\/i>: \u201cDesign methodology for a 40-GSamples\/s track and hold amplifier in 0.18-\u00b5m SiGe BiCMOS technology,\u201d IEEE J. Solid-State Circuits <b>41<\/b> (2006) 2233 (DOI: 10.1109\/JSSC.2006.878111).","DOI":"10.1109\/JSSC.2006.878111"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] Y.-A. Lin, <i>et al.<\/i>: \u201cA 55-dB SFDR 16-GS\/s track-and-hold amplifier in 0.18 \u00b5m SiGe using differential feedthrough cancellation technique,\u201d IEEE MTT-S International Microwave Symposium (IMS) (2016) 1 (DOI: 10.1109\/MWSYM.2016.7540037).","DOI":"10.1109\/MWSYM.2016.7540037"},{"key":"6","unstructured":"[6] B. Razavi: <i>Design of Analog CMOS Integrated Circuits<\/i> (McGraw-Hill, Boston, 2016) 2nd ed. 190."},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] R. Tantawy, <i>et al.<\/i>: \u201cA high linearity, 2.8 GS\/s, 10-bit accurate, sample and hold amplifier in 130 nm SiGe BiCMOS,\u201d IEEE International Symposium on Circuits and Systems (ISCAS) (2018) 1 (DOI: 10.1109\/ISCAS.2018.8351154).","DOI":"10.1109\/ISCAS.2018.8351154"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] Y.-C. Liu, <i>et al.<\/i>: \u201cA 12 GB\/s 3-GHz input bandwidth track-and-hold amplifier in 65 nm CMOS with 48-dB spur-free dynamic range,\u201d IEEE MTT-S International Microwave Symposium (IMS) (2014) 1 (DOI: 10.1109\/MWSYM.2014.6848487).","DOI":"10.1109\/MWSYM.2014.6848487"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] H.-L. Chen, <i>et al.<\/i>: \u201cA 5-GS\/s 46-dBc SFDR track and hold amplifier,\u201d Int. Intell. Signal Process. Commun. Syst. Symp. (2012) 636 (DOI: 10.1109\/ISPACS.2012.6473567).","DOI":"10.1109\/ISPACS.2012.6473567"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] Y. Bouvier, <i>et al.<\/i>: \u201cA 1-GSample\/s, 15-GHz input bandwidth master-slave track-and-hold amplifier in InP DHBT technology,\u201d IEEE Trans. Microw. Theory Techn. <b>57<\/b> (2009) 3181 (DOI: 10.1109\/TMTT.2009.2033252).","DOI":"10.1109\/TMTT.2009.2033252"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] K. Poulton, <i>et al.<\/i>: \u201cA 6-b, 4 GSa\/s GaAs HBT ADC,\u201d IEEE J. Solid-State Circuits <b>30<\/b> (1995) 1109 (DOI: 10.1109\/4.466071).","DOI":"10.1109\/4.466071"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] A. Razzaghi and M. C. F. Chang: \u201cA 10-b, 1-GSample\/s track-and-hold amplifier using SiGe BiCMOS technology,\u201d IEEE Custom Integrated Circuits Conference (2003) 433 (DOI: 10.1109\/CICC.2003.1249435).","DOI":"10.1109\/CICC.2003.1249435"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] W. Bishop and K. McKinney: \u201cA novel whiskerless Schottky diode for millimeter and submillimeter wave application,\u201d IEEE MTT-S Int. Microw. Symp. Dig. (1987) 607 (DOI: 10.1109\/MWSYM.1987.1132483).","DOI":"10.1109\/MWSYM.1987.1132483"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] A. Buonomo and A. Lo Schiavo: \u201cPerturbation analysis of nonlinear distortion in analog integrated circuits,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>52<\/b> (2005) 1620 (DOI: 10.1109\/TCSI.2005.851695).","DOI":"10.1109\/TCSI.2005.851695"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/15\/23\/15_15.20180946\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,12,14]],"date-time":"2018-12-14T23:26:41Z","timestamp":1544830001000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/15\/23\/15_15.20180946\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018]]},"references-count":14,"journal-issue":{"issue":"23","published-print":{"date-parts":[[2018]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.15.20180946","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018]]}}}