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J. Baliga: \u201cEnhancement and depletion mode vertical channel MOS-gated thyristors,\u201d Electron. Lett. <b>15<\/b> (1979) 645 (DOI: 10.1049\/el:19790459).","DOI":"10.1049\/el:19790459"},{"key":"2","unstructured":"[2] V. A. K. Temple: \u201cMOS controlled thyristors (MCT\u2019s),\u201d IEDM (1984) 282 (DOI: 10.1109\/IEDM.1984.190702)."},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] V. A. K. Temple: \u201cMOS-controlled thyristors-A new class of power devices,\u201d IEEE Trans. Electron Devices <b>33<\/b> (1986) 1609 (DOI: 10.1109\/T-ED.1986.22714).","DOI":"10.1109\/T-ED.1986.22714"},{"key":"4","unstructured":"[4] M. Stoisiek and H. Strack: \u201cMOS GTO-A turn off thyristor with MOS-controlled emitter shorts,\u201d IEDM (1985) 158 (DOI: 10.1109\/IEDM.1985.190918)."},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] M. Nandakumar, <i>et al.<\/i>: \u201cA new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance,\u201d IEEE Electron Device Lett. <b>12<\/b> (1991) 227 (DOI: 10.1109\/55.79565).","DOI":"10.1109\/55.79565"},{"key":"6","unstructured":"[6] M. Nandakumar, <i>et al.<\/i>: \u201cThe base resistance controlled thyristor (BRT)-A new MOS gated power thyristor,\u201d ISPSD (1991) 138 (DOI: 10.1109\/ISPSD.1991.146084)."},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] M. Nandakumar, <i>et al.<\/i>: \u201cTheoretical and experimental characteristics of the base resistance controlled thyristor (BRT),\u201d IEEE Trans. Electron Devices <b>39<\/b> (1992) 1938 (DOI: 10.1109\/16.144687).","DOI":"10.1109\/16.144687"},{"key":"8","unstructured":"[8] B. J. Baliga: U.S. Patent 5099300 (1992)."},{"key":"9","unstructured":"[9] B. J. Baliga: U.S. Patent 5198687 (1993)."},{"key":"10","unstructured":"[10] D. N. Pattanayak and B. J. Baliga: U.S. Patent 4847671 (1989)."},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] B. J. Baliga: \u201cThe MOS-gated emitter switched thyristor,\u201d IEEE Electron Device Lett. <b>11<\/b> (1990) 75 (DOI: 10.1109\/55.46933).","DOI":"10.1109\/55.46933"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] M. S. Shekar, <i>et al.<\/i>: \u201cCharacteristics of the emitter switched thyristor,\u201d IEEE Trans. Electron Devices <b>38<\/b> (1991) 1619 (DOI: 10.1109\/16.85158).","DOI":"10.1109\/16.85158"},{"key":"13","unstructured":"[13] M. Nandakumar, <i>et al.<\/i>: \u201cFast switching power MOS-gated (EST and BRT) thyristors,\u201d ISPSD (1992) 256 (DOI: 10.1109\/ISPSD.1992.991282)."},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] B. J. Baliga: \u201cTrends in power semiconductor devices,\u201d IEEE Trans. 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Byeon, <i>et al.<\/i>: \u201cCB-BRT: A new base resistance-controlled thyristor employing a self-aligned corrugated p-base,\u201d IEEE Electron Device Lett. <b>19<\/b> (1998) 493 (DOI: 10.1109\/55.735757).","DOI":"10.1109\/55.735757"},{"key":"19","unstructured":"[19] D. S. Byeon, <i>et al.<\/i>: \u201cA base resistance controlled thyristor with the self-align corrugated p-base,\u201d ISPSD (1998) 209 (DOI: 10.1109\/ISPSD.1998.702670)."},{"key":"20","unstructured":"[20] D. S. Byeon, <i>et al.<\/i>: \u201cThe maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base,\u201d ISPSD (1999) 229 (DOI: 10.1109\/ISPSD.1999.764105)."},{"key":"21","unstructured":"[21] O. Jae-Keun, <i>et al.<\/i>: \u201cA new base resistance controlled thyristor employing trench gate and self-align corrugated p-base,\u201d ISPSD (2001) 207 (DOI: 10.1109\/ISPSD.2001.934591)."},{"key":"22","unstructured":"[22] W. Saito, <i>et al.<\/i>: \u201c600 V semi-superjunction MOSFET,\u201d ISPSD (2003) 45 (DOI: 10.1109\/ISPSD.2003.1225227)."},{"key":"23","doi-asserted-by":"publisher","unstructured":"[23] W. Saito, <i>et al.<\/i>: \u201cSemisuperjunction MOSFETs: New design concept for lower on-resistance and softer reverse-recovery body diode,\u201d IEEE Trans. Electron Devices <b>50<\/b> (2003) 1801 (DOI: 10.1109\/TED.2003.815126).","DOI":"10.1109\/TED.2003.815126"},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] W. Saito, <i>et al.<\/i>: \u201cHigh breakdown voltage (&gt;1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process,\u201d IEEE Trans. Electron Devices <b>52<\/b> (2005) 2317 (DOI: 10.1109\/TED.2005.856804).","DOI":"10.1109\/TED.2005.856804"},{"key":"25","unstructured":"[25] W. Saito, <i>et al.<\/i>: \u201cOver 1000 V semi-superjunction MOSFET with ultra-low on-resistance below the Si-limit,\u201d ISPSD (2005) 27 (DOI: 10.1109\/ISPSD.2005.1487942)."},{"key":"26","unstructured":"[26] S. Ono: \u201cDesign concept of n-buffer layer (n-bottom assist layer) for 600 V-class semi-super junction MOSFET,\u201d ISPSD (2007) 25 (DOI: 10.1109\/ISPSD.2007.4294923)."},{"key":"27","doi-asserted-by":"publisher","unstructured":"[27] H. Huang and X. Chen: \u201cOptimization of specific on-resistance of semisuperjunction trench MOSFETs with charge balance,\u201d IEEE Trans. Electron Devices <b>60<\/b> (2013) 1195 (DOI: 10.1109\/TED.2013.2242331).","DOI":"10.1109\/TED.2013.2242331"},{"key":"28","unstructured":"[28] F. Hu, <i>et al.<\/i>: \u201cA base resistance controlled thyristor with N-type buried layer to suppress the snapback phenomenon,\u201d ICSICT (2018) 1 (DOI: 10.1109\/ICSICT.2018.8565735)."},{"key":"29","unstructured":"[29] M. 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Antoniou, <i>et al.<\/i>: \u201cThe semi-superjunction IGBT,\u201d IEEE Electron Device Lett. <b>31<\/b> (2010) 591 (DOI: 10.1109\/LED.2010.2046132).","DOI":"10.1109\/LED.2010.2046132"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/16\/8\/16_16.20190104\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,4,26]],"date-time":"2019-04-26T23:34:18Z","timestamp":1556321658000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/16\/8\/16_16.20190104\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":30,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2019]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.16.20190104","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019]]}}}