{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,3]],"date-time":"2024-08-03T04:31:15Z","timestamp":1722659475165},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"13","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1587\/elex.16.20190244","type":"journal-article","created":{"date-parts":[[2019,6,16]],"date-time":"2019-06-16T18:02:51Z","timestamp":1560708171000},"page":"20190244-20190244","source":"Crossref","is-referenced-by-count":2,"title":["A radiation-hardened Buck converter"],"prefix":"10.1587","volume":"16","author":[{"given":"Pengbo","family":"Yang","sequence":"first","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ping","family":"Luo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haoyang","family":"Xiao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rongxun","family":"Lin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiao","family":"Zhou","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shaowei","family":"Zhen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] P. C. Adell, <i>et al.<\/i>: \u201cTotal-dose and single-event effects in switching DC\/DC power converters,\u201d IEEE Trans. Nucl. Sci. <b>49<\/b> (2002) 3217 (DOI: 10.1109\/TNS.2002.805425).","DOI":"10.1109\/TNS.2002.805425"},{"key":"2","unstructured":"[2] R. C. Lacoe, <i>et al.<\/i>: \u201cTotal-dose tolerance of the commercial Taiwan semiconductor manufacturing company (TSMC) 0.35-\u00b5m CMOS process,\u201d REDW (2001) 72 (DOI: 10.1109\/REDW.2001.960453)."},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] F. Faccio, <i>et al.<\/i>: \u201cTID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters,\u201d IEEE Trans. Nucl. Sci. <b>57<\/b> (2010) 1790 (DOI: 10.1109\/TNS.2010.2049584).","DOI":"10.1109\/TNS.2010.2049584"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] Z. Liu, <i>et al.<\/i>: \u201cDesign of a total-dose radiation hardened monolithic CMOS DC-DC boost converter,\u201d J. Semicond. <b>32<\/b> (2011) 075006 (DOI: 10.1088\/1674-4926\/32\/7\/075006).","DOI":"10.1088\/1674-4926\/32\/7\/075006"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] P. C. Adell, <i>et al.<\/i>: \u201cTotal-dose and single-event effects in DC\/DC converter control circuitry,\u201d IEEE Trans. Nucl. Sci. <b>50<\/b> (2003) 1867 (DOI: 10.1109\/TNS.2003.820757).","DOI":"10.1109\/TNS.2003.820757"},{"key":"6","unstructured":"[6] S. Michelis, <i>et al.<\/i>: \u201cAn 8 W-2 MHz buck converter with adaptive dead time tolerant to radiation and high magnetic field,\u201d ESSCIRC (2010) 438 (DOI: 10.1109\/ESSCIRC.2010.5619737)."},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] C. Alessandra, <i>et al.<\/i>: \u201cCMOS IC radiation hardening by design,\u201d FUEE <b>27<\/b> (2014) 251 (DOI: 10.2298\/FUEE1402251C).","DOI":"10.2298\/FUEE1402251C"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] H. L. Hughes and J. M. Benedetto: \u201cRadiation effects and hardening of MOS technology: Devices and circuits,\u201d IEEE Trans. Nucl. Sci. <b>50<\/b> (2003) 500 (DOI: 10.1109\/TNS.2003.812928).","DOI":"10.1109\/TNS.2003.812928"},{"key":"9","unstructured":"[9] H. Pan, <i>et al.<\/i>: \u201cMethod to improve total dose radiation hardness in a CMOS dc-dc boost converter,\u201d APEC (2005) 1491 (DOI: 10.1109\/APEC.2005.1453230)."},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] I. S. Esqueda, <i>et al.<\/i>: \u201cCompact modeling of total ionizing dose and aging effects in MOS technologies,\u201d IEEE Trans. Nucl. Sci. <b>62<\/b> (2015) 1501 (DOI: 10.1109\/TNS.2015.2414426).","DOI":"10.1109\/TNS.2015.2414426"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] J. R. Schwank, <i>et al.<\/i>: \u201cRadiation effects in MOS oxides,\u201d IEEE Trans. Nucl. Sci. <b>55<\/b> (2008) 1833 (DOI: 10.1109\/TNS.2008.2001040).","DOI":"10.1109\/TNS.2008.2001040"},{"key":"12","unstructured":"[12] H. M. Joseph: \u201cRadiation-induced effects on special super large n-channel power MOSFETS for space applications,\u201d RADECS (1991) 128 (DOI: 10.1109\/RADECS.1991.213595)."},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] E. Garcia-Moreno, <i>et al.<\/i>: \u201cTemperature compensated floating gate MOS radiation sensor with current output,\u201d IEEE Trans. Nucl. Sci. <b>60<\/b> (2013) 4026 (DOI: 10.1109\/TNS.2013.2277605).","DOI":"10.1109\/TNS.2013.2277605"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] F. Faccio, <i>et al.<\/i>: \u201cTotal ionizing dose effects in shallow trench isolation oxides,\u201d Microelectron. Reliab. <b>48<\/b> (2008) 1000 (DOI: 10.1016\/j.microrel.2008.04.004).","DOI":"10.1016\/j.microrel.2008.04.004"},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] M. Hao, <i>et al.<\/i>: \u201cTotal ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET,\u201d IEICE Electron. Express <b>14<\/b> (2017) 20170411 (DOI: 10.1587\/elex.14.20170411).","DOI":"10.1587\/elex.14.20170411"},{"key":"16","unstructured":"[16] F. Faccio, <i>et al.<\/i>: \u201cFEAST2: A radiation and magnetic field tolerant point-of-load Buck DC\/DC converter,\u201d REDW (2014) 1 (DOI: 10.1109\/REDW.2014.7004569)."},{"key":"17","unstructured":"[17] Y. He, <i>et al.<\/i>: \u201cThe irradiation effect and failure analysis of DC-DC power converter,\u201d IPFA (2009) 385 (DOI: 10.1109\/IPFA.2009.5232625)."},{"key":"18","doi-asserted-by":"publisher","unstructured":"[18] L. N. Kessarinskiy, <i>et al.<\/i>: \u201cDC-DC\u2019s total ionizing dose hardness decrease in passive reserve mode,\u201d Microelectron. Reliab. <b>55<\/b> (2015) 1527 (DOI: 10.1016\/J.MICROREL.2015.06.113).","DOI":"10.1016\/j.microrel.2015.06.113"},{"key":"19","doi-asserted-by":"publisher","unstructured":"[19] F. Faccio, <i>et al.<\/i>: \u201cDevelopment of custom radiation-tolerant DCDC converter ASICs,\u201d JINST <b>5<\/b> (2010) C11016 (DOI: 10.1088\/1748-0221\/5\/11\/C11016).","DOI":"10.1088\/1748-0221\/5\/11\/C11016"},{"key":"20","unstructured":"[20] J. W. Swonger, <i>et al.<\/i>: \u201cRadiation-hardened point-of-load Buck regulators for space applications,\u201d REDW (2012) 1 (DOI: 10.1109\/REDW.2012.6353711)."},{"key":"21","unstructured":"[21] Y. H. Lho, <i>et al.<\/i>: \u201cA study on radiation effects on PWM-IC controller of DC\/DC power buck converter,\u201d ICCAS (2013) 1754 (DOI: 10.1109\/ICCAS.2013.6704221)."},{"key":"22","doi-asserted-by":"publisher","unstructured":"[22] P. C. Adell, <i>et al.<\/i>: \u201cRadiation effects in power systems: A review,\u201d IEEE Trans. Nucl. Sci. <b>60<\/b> (2013) 1929 (DOI: 10.1109\/TNS.2013.2262235).","DOI":"10.1109\/TNS.2013.2262235"},{"key":"23","doi-asserted-by":"publisher","unstructured":"[23] X. Xie, <i>et al.<\/i>: \u201cA radiation-hardened programmable read only memory for space applications,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180675 (DOI: 10.1587\/elex.15.20180675).","DOI":"10.1587\/elex.15.20180675"},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] M. Hao, <i>et al.<\/i>: \u201cEffects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET,\u201d IEICE Electron. Express <b>14<\/b> (2017) 20170866 (DOI: 10.1587\/elex.14.20170866).","DOI":"10.1587\/elex.14.20170866"},{"key":"25","unstructured":"[25] X. Jing, <i>et al.<\/i>: \u201cCurrent-slope-controlled adaptive-on-time DC-DC converter with fixed frequency and fast transient response,\u201d ISCAS (2011) 1908 (DOI: 10.1109\/ISCAS.2011.5937961)."},{"key":"26","unstructured":"[26] Y. Mo, <i>et al.<\/i>: \u201cA flexible pulse skip modulation buck DC-DC converter enabling minimum energy point tracking,\u201d ICSICT (2012) 1 (DOI: 10.1109\/ICSICT.2012.6467720)."},{"key":"27","doi-asserted-by":"publisher","unstructured":"[27] D. Wang, <i>et al.<\/i>: \u201cA pulse skipping modulation with adaptive duty ratio in buck converter application,\u201d IEICE Electron. Express <b>12<\/b> (2015) 20150548 (DOI: 10.1587\/elex.12.20150548).","DOI":"10.1587\/elex.12.20150548"},{"key":"28","doi-asserted-by":"publisher","unstructured":"[28] H. J. Barnaby: \u201cTotal-ionizing-dose effects in modern CMOS technologies,\u201d IEEE Trans. Nucl. Sci. <b>53<\/b> (2006) 3103 (DOI: 10.1109\/TNS.2006.885952).","DOI":"10.1109\/TNS.2006.885952"},{"key":"29","unstructured":"[29] T. Vergine, <i>et al.<\/i>: \u201cA 65 nm CMOS technology radiation-hard bandgap reference circuit,\u201d PRIME (2014) 1 (DOI: 10.1109\/PRIME.2014.6872688)."},{"key":"30","unstructured":"[30] X. Zhou, <i>et al.<\/i>: \u201cA radiation waffle layout for BCD power MOSFET,\u201d ASICON (2017) 773 (DOI: 10.1109\/ASICON.2017.8252590)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/16\/13\/16_16.20190244\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,7,12]],"date-time":"2019-07-12T23:23:16Z","timestamp":1562973796000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/16\/13\/16_16.20190244\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":30,"journal-issue":{"issue":"13","published-print":{"date-parts":[[2019]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.16.20190244","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019]]}}}