{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,28]],"date-time":"2025-10-28T18:39:27Z","timestamp":1761676767792},"reference-count":29,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"19","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1587\/elex.16.20190445","type":"journal-article","created":{"date-parts":[[2019,9,5]],"date-time":"2019-09-05T22:09:40Z","timestamp":1567721380000},"page":"20190445-20190445","source":"Crossref","is-referenced-by-count":3,"title":["A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO&lt;sub&gt;2&lt;\/sub&gt; layer"],"prefix":"10.1587","volume":"16","author":[{"given":"Weizhong","family":"Chen","sequence":"first","affiliation":[{"name":"College of Electronics Engineering, Chongqing University of Posts and Telecommunications"},{"name":"Institute of Microelectronics of Chinese Academy of Sciences"}]},{"given":"Yao","family":"Huang","sequence":"additional","affiliation":[{"name":"College of Electronics Engineering, Chongqing University of Posts and Telecommunications"}]},{"given":"Shun","family":"Li","sequence":"additional","affiliation":[{"name":"College of Electronics Engineering, Chongqing University of Posts and Telecommunications"}]},{"given":"LingLi","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Mathematics and Information Engineering, Chongqing University of Education"}]},{"given":"Lijun","family":"He","sequence":"additional","affiliation":[{"name":"College of Electronics Engineering, Chongqing University of Posts and Telecommunications"}]},{"given":"Yi","family":"Huang","sequence":"additional","affiliation":[{"name":"College of Electronics Engineering, Chongqing University of Posts and Telecommunications"}]},{"given":"Zhengsheng","family":"Han","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] W. Sun, <i>et al.<\/i>: \u201cA novel silicon-on-insulator lateral insulated-gate bipolar transistor with dual trenches for three-phase single chip inverter ICs,\u201d IEEE Electron Device Lett. <b>36<\/b> (2015) 693 (DOI: 10.1109\/LED.2015.2434611).","DOI":"10.1109\/LED.2015.2434611"},{"key":"2","unstructured":"[2] D. Daniel: U.S. Patent 8729914 (2014)."},{"key":"3","unstructured":"[3] T. Yoshida, <i>et al.<\/i>: \u201cThe second-generation 600 V RC-IGBT with optimized FWD,\u201d ISPSD (2016) 159 (DOI: 10.1109\/ISPSD.2016.7520802)."},{"key":"4","unstructured":"[4] K. Kenj: U.S. Patent 8299539 (2012)."},{"key":"5","unstructured":"[5] N. Iwamuro, <i>et al.<\/i>: \u201cA chip design concept for an extremely low on-state voltage 1200 V FS-IGBT\/FWD with high withstand capability for the MERS configuration,\u201d ISPSD (2009) 160 (DOI: 10.1109\/ISPSD.2009.5158026)."},{"key":"6","unstructured":"[6] K. Yamada: U.S. Patent 10186609 (2019)."},{"key":"7","unstructured":"[7] H. Takahashi, <i>et al.<\/i>: \u201c1200 V reverse conducting IGBT,\u201d ISPSD (2004) 133 (DOI: 10.1109\/WCT.2004.239844)."},{"key":"8","unstructured":"[8] T. Naito: U.S. Patent 2018366548 (2018)."},{"key":"9","unstructured":"[9] K. Arjun: U.S. Patent 2016372193 (2016)."},{"key":"10","unstructured":"[11] C. Park: U.S. Patent 9673314 (2017)."},{"key":"11","unstructured":"[12] T. Takahashi: U.S. Patent 9601485 (2017)."},{"key":"12","doi-asserted-by":"publisher","unstructured":"[13] L. Zhu and X. Chen: \u201cTheoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT,\u201d J. Semicond. <b>35<\/b> (2014) 064009 (DOI: 10.1088\/1674-4926\/35\/6\/064009).","DOI":"10.1088\/1674-4926\/35\/6\/064009"},{"key":"13","unstructured":"[14] K. P. Sung: U.S. Patent 9324800 (2016)."},{"key":"14","doi-asserted-by":"publisher","unstructured":"[15] H. Jiang, <i>et al.<\/i>: \u201cA snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector,\u201d IEEE Electron Device Lett. <b>33<\/b> (2012) 417 (DOI: 10.1109\/LED.2011.2180357).","DOI":"10.1109\/LED.2011.2180357"},{"key":"15","unstructured":"[16] W. Chen, <i>et al.<\/i>: \u201cA high reliable reverse-conducting IGBT with a floating P-plug,\u201d ISPSD (2013) 265 (DOI: 10.1109\/ISPSD.2013.6694437)."},{"key":"16","doi-asserted-by":"publisher","unstructured":"[17] W.-Z. Chen, <i>et al.<\/i>: \u201cA snapback suppressed reverse-conducting IGBT with uniform temperature distribution,\u201d Chin. Phys. B <b>23<\/b> (2014) 018505 (DOI: 10.1088\/1674-1056\/23\/1\/018505).","DOI":"10.1088\/1674-1056\/23\/1\/018505"},{"key":"17","unstructured":"[18] W. Zhang, <i>et al.<\/i>: \u201cUltra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept,\u201d ISPSD (2013) 329 (DOI: 10.1109\/ISPSD.2013.6694415)."},{"key":"18","unstructured":"[19] C. Park: U.S. Patent 2017271498 (2017)."},{"key":"19","doi-asserted-by":"publisher","unstructured":"[20] W. Chen, <i>et al.<\/i>: \u201cA snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design,\u201d Chin. Phys. B <b>27<\/b> (2018) 088501 (DOI: 10.1088\/1674-1056\/27\/8\/088501).","DOI":"10.1088\/1674-1056\/27\/8\/088501"},{"key":"20","unstructured":"[21] S. Yamazaki: U.S. Patent 10263118 (2019)."},{"key":"21","unstructured":"[22] X. Lin: U.S. Patent 9496333 (2016)."},{"key":"22","unstructured":"[23] A. Sadovnikov: U.S. Patent 9640611 (2017)."},{"key":"23","doi-asserted-by":"publisher","unstructured":"[24] W. Chen, <i>et al.<\/i>: \u201cA snapback suppressed reverse-conducting IGBT with soft reverse recovery characteristic,\u201d Superlattices Microstruct. <b>61<\/b> (2013) 59 (DOI: 10.1016\/j.spmi.2013.06.012).","DOI":"10.1016\/j.spmi.2013.06.012"},{"key":"24","doi-asserted-by":"publisher","unstructured":"[25] L. Zhu, <i>et al.<\/i>: \u201cAn investigation of a novel snapback-free reverse-conducting IGBT and with dual gates,\u201d IEEE Trans. Electron Devices <b>59<\/b> (2012) 3048 (DOI: 10.1109\/TED.2012.2215039).","DOI":"10.1109\/TED.2012.2215039"},{"key":"25","unstructured":"[26] B. Duan, <i>et al.<\/i>: \u201cAnalysis of the novel snapback-free LIGBT with fast-switching and improved latch-up immunity by TCAD simulation,\u201d IEEE Electron Device Lett. <b>40<\/b> (2019) 63 (DOI: 10.1109\/LED.2018.2881289)."},{"key":"26","unstructured":"[27] S. Li, <i>et al.<\/i>: \u201cA high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer,\u201d ISPSD (2018) 323 (DOI: 10.1109\/ISPSD.2018.8393668)."},{"key":"27","unstructured":"[28] G. Deng, <i>et al.<\/i>: \u201cA snapback-free RC-IGBT with alternating N\/P buffers,\u201d IISPSD (2017) 127 (DOI: 10.23919\/ISPSD.2017.7988943)."},{"key":"28","doi-asserted-by":"publisher","unstructured":"[29] M. Antoniou, <i>et al.<\/i>: \u201cThe semi-superjunction IGBT,\u201d IEEE Electron Device Lett. <b>31<\/b> (2010) 591 (DOI: 10.1109\/LED.2010.2046132).","DOI":"10.1109\/LED.2010.2046132"},{"key":"29","doi-asserted-by":"publisher","unstructured":"[30] X. Xu, <i>et al.<\/i>: \u201cGate field plate IGBT with trench accumulation layer for extreme injection enhancement,\u201d Superlattices Microstruct. <b>104<\/b> (2017) 54 (DOI: 10.1016\/j.spmi.2017.01.046).","DOI":"10.1016\/j.spmi.2017.01.046"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/16\/19\/16_16.20190445\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,12]],"date-time":"2019-10-12T03:22:23Z","timestamp":1570850543000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/16\/19\/16_16.20190445\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":29,"journal-issue":{"issue":"19","published-print":{"date-parts":[[2019]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.16.20190445","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019]]}}}