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Sepahvand, <i>et al.<\/i>: \u201cHigh efficiency 20\u2013400 MHz PWM converters using air-core inductors and monolithic power stages in a normally-off GaN process,\u201d 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) (2016) 580 (DOI: 10.1109\/APEC.2016.7467930)."},{"key":"5","unstructured":"[5] N. Otsuka, <i>et al.<\/i>: \u201cRecent progress in GaN devices for power and integrated circuit,\u201d 2017 IEEE 12th International Conference on ASIC (ASICON) (2017) 928 (DOI: 10.1109\/ASICON.2017.8252629)."},{"key":"6","unstructured":"[6] D. Maksimovi\u0107, <i>et al.<\/i>: \u201cMonolithic very high frequency GaN switched-mode power converters,\u201d 2015 IEEE Custom Integrated Circuits Conference (CICC) (2015) 1 (DOI: 10.1109\/CICC.2015.7338386)."},{"key":"7","unstructured":"[7] R. Reiner, <i>et al.<\/i>: \u201cMulti-stage cascode in high-voltage AlGaN\/GaN-on-Si technology,\u201d 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2018) 237 (DOI: 10.1109\/WiPDA.2018.8569168)."},{"key":"8","unstructured":"[8] D. Kinzer and S. Oliver, \u201cGaN matures for industry with monolithic power ICs,\u201d Power Electronics Europe (2016) 26."},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] F. Gamand, <i>et al.<\/i>: \u201cA 10-MHz GaN HEMT DC\/DC boost converter for power amplifier applications,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>59<\/b> (2012) 776 (DOI: 10.1109\/TCSII.2012.2228397).","DOI":"10.1109\/TCSII.2012.2228397"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] W. Saito, <i>et al.<\/i>: \u201cA 120-W boost converter operation using a high-voltage GaN-HEMT,\u201d IEEE Electron Device Lett. <b>29<\/b> (2008) 8 (DOI: 10.1109\/LED.2007.910796).","DOI":"10.1109\/LED.2007.910796"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] Y. Wu, <i>et al.<\/i>: \u201cA 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz,\u201d IEEE Electron Device Lett. <b>29<\/b> (2008) 824 (DOI: 10.1109\/LED.2008.2000921).","DOI":"10.1109\/LED.2008.2000921"},{"key":"12","unstructured":"[12] L. Sun, <i>et al.<\/i>: \u201cHigh efficiency high density telecom rectifier with GaN device,\u201d 2015 IEEE International Telecommunications Energy Conference (INTELEC) (2015) 1 (DOI: 10.1109\/INTLEC.2015.7572401)."},{"key":"13","unstructured":"[13] J. W. Kolar, <i>et al.<\/i>: \u201cPerformance trends and limitations of power electronic systems,\u201d 2010 6th International Conference on Integrated Power Electronics Systems (2010) 1."},{"key":"14","unstructured":"[14] L. Xue and J. Zhang: \u201cSingle-stage 6.78 MHz power-amplifier design using high-voltage GaN power ICs for wireless charging applications,\u201d 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) (2017) 3743 (DOI: 10.1109\/APEC.2017.7931237)."},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] D. Kinzer and S. Oliver: \u201cMonolithic HV GaN power ICs: Performance and application,\u201d IEEE Power Electron. Mag. <b>3<\/b> (2016) 14 (DOI: 10.1109\/MPEL.2016.2585474).","DOI":"10.1109\/MPEL.2016.2585474"},{"key":"16","unstructured":"[16] H. Moradisizkoohi, <i>et al.<\/i>: \u201cA multi-level bi-directional buck-boost converter using GaN devices for electric vehicle applications,\u201d 2017 IEEE Transportation Electrification Conference and Expo (ITEC) (2017) 742 (DOI: 10.1109\/ITEC.2017.7993362)."},{"key":"17","unstructured":"[17] J. Lu, <i>et al.<\/i>: \u201cAn indirect matrix converter based 97%-efficiency on-board level 2 battery charger using e-mode GaN HEMTs,\u201d 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2015) 351 (DOI: 10.1109\/WiPDA.2015.7369258)."},{"key":"18","unstructured":"[18] Qromis: http:\/\/qromis.com\/."},{"key":"19","unstructured":"[19] C. Basceri: \u201cHigh performance &amp; scalable GaN device manufacturing status on 8-inch diameter QST<sup>\u00ae<\/sup> platform,\u201d Meeting Abstracts The Electrochemical Society, no. 34 (2018) 1159."},{"key":"20","unstructured":"[20] Y. Yamashita, <i>et al.<\/i>: \u201cMonolithically integrated e-mode GaN-on-SOI gate driver with power GaN-HEMT for MHz-switching,\u201d 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2018) 231 (DOI: 10.1109\/WiPDA.2018.8569057)."},{"key":"21","doi-asserted-by":"publisher","unstructured":"[21] X. Li, <i>et al.<\/i>: \u201cSuppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200-mm GaN-on-SOI for monolithic integration,\u201d IEEE Electron Device Lett. <b>39<\/b> (2018) 999 (DOI: 10.1109\/LED.2018.2833883).","DOI":"10.1109\/LED.2018.2833883"},{"key":"22","unstructured":"[22] S. Moench, <i>et al.<\/i>: \u201cSubstrate potential of high-voltage GaN-on-Si HEMTs and half-bridges: Static and dynamic four-terminal characterization and modeling,\u201d 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL) (2017) 1 (DOI: 10.1109\/COMPEL.2017.8013383)."},{"key":"23","unstructured":"[23] S. Moench, <i>et al.<\/i>: \u201cEffect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges,\u201d 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2017) 257 (DOI: 10.1109\/WiPDA.2017.8170557)."},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] K. Nagaoka, <i>et al.<\/i>: \u201cHigh-speed gate drive circuit for SiC MOSFET by GaN HEMT,\u201d IEICE Electron. Express <b>12<\/b> (2015) (DOI: 10.1587\/elex.12.20150285).","DOI":"10.1587\/elex.12.20150285"},{"key":"25","unstructured":"[25] Q. Chen: \u201cLatest advances in gallium nitride HEMT modeling,\u201d 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (2014) 1 (DOI: 10.1109\/ICSICT.2014.7021208)."},{"key":"26","unstructured":"[26] A. 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