{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,6,27]],"date-time":"2024-06-27T06:34:29Z","timestamp":1719470069608},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2020]]},"DOI":"10.1587\/elex.17.20190702","type":"journal-article","created":{"date-parts":[[2020,1,8]],"date-time":"2020-01-08T22:03:50Z","timestamp":1578521030000},"page":"20190702-20190702","source":"Crossref","is-referenced-by-count":2,"title":["A novel method to test and optimize the periphery crosstalk in CMOS image sensor"],"prefix":"10.1587","volume":"17","author":[{"given":"Pengyu","family":"Liu","sequence":"first","affiliation":[{"name":"Shenzhen International Graduate School Tsinghua University"},{"name":"Institute of Microelectronics Tsinghua University"}]},{"given":"Sheng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Shenzhen International Graduate School Tsinghua University"},{"name":"Institute of Microelectronics Tsinghua University"}]},{"given":"Wenli","family":"Shen","sequence":"additional","affiliation":[{"name":"Shenzhen International Graduate School Tsinghua University"}]}],"member":"532","reference":[{"key":"1","unstructured":"[1] K. Hirakawa: \u201cCross-talk explained,\u201d IEEE International Conference on Image Processing (2008) 677 (DOI: 10.1109\/ICIP.2008.4711845)."},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] I. Shcherback, <i>et al.<\/i>: \u201cA comprehensive CMOS APS crosstalk study: Photoresponse model, technology, and design trends,\u201d IEEE Trans. Electron Devices <b>51<\/b> (2004) 2033 (DOI: 10.1109\/TED.2004.839742).","DOI":"10.1109\/TED.2004.839742"},{"key":"3","unstructured":"[3] G. Agranov, <i>et al.<\/i>: \u201cCrosstalk and sub-pixel distribution of sensitivity in color CMOS image sensor,\u201d Int. Image Sensor Workshop (2001)."},{"key":"4","unstructured":"[4] C.-H. Koo, <i>et al.<\/i>: \u201cImprovement of crosstalk on 5 M CMOS image sensor with 1.7 \u00d7 1.7 um<sup>2<\/sup> pixels,\u201d Proc. SPIE <b>6471<\/b> (2007) 647115 (DOI: 10.1117\/12.701705)."},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] I. 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Electron Devices <b>50<\/b> (2003) 4 (DOI: 10.1109\/TED.2002.806473).","DOI":"10.1109\/TED.2002.806473"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] X. Jin, <i>et al.<\/i>: \u201cSensitivity and crosstalk study of the zero gap microlens used in 3.2 \u00b5m active pixel image sensors,\u201d Microelectron. Eng. <b>87<\/b> (2010) 631 (DOI: 10.1016\/j.mee.2009.08.028).","DOI":"10.1016\/j.mee.2009.08.028"},{"key":"10","unstructured":"[10] Q. Chen, <i>et al.<\/i>: \u201cA CMOS image sensor integrated with plasmonic colour filters,\u201d Plasmonics <b>7<\/b> (2012) 695 (DOI: 10.1007\/s11468-012-9360-6)."},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] S. Yokogawa, <i>et al.<\/i>: \u201cPlasmonic color filters for CMOS image sensor applications,\u201d Nano Lett. <b>12<\/b> (2012) 4349 (DOI: 10.1021\/nl302110z).","DOI":"10.1021\/nl302110z"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] Y. 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Ahmed, <i>et al.<\/i>: \u201cMOS capacitor deep trench isolation for CMOS image sensors,\u201d IEEE International Electron Devices Meeting (2014) 4.1.1 (DOI: 10.1109\/IEDM.2014.7046979)."},{"key":"22","unstructured":"[22] D.-N. Yaung, <i>et al.<\/i>: \u201cAir-gap guard ring for pixel sensitivity and crosstalk improvement in deep sub-micron CMOS image sensor,\u201d IEEE International Electron Devices Meeting (2003) 16.5.1 (DOI: 10.1109\/IEDM.2003.1269308)."},{"key":"23","doi-asserted-by":"publisher","unstructured":"[23] T. Hsu, <i>et al.<\/i>: \u201cA high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-\u00b5m CMOS technology,\u201d IEEE Electron Device Lett. <b>26<\/b> (2005) 634 (DOI: 10.1109\/LED.2005.854373).","DOI":"10.1109\/LED.2005.854373"},{"key":"24","unstructured":"[24] C.-H. Tseng, <i>et al.<\/i>: \u201cCrosstalk improvement technology applicable to 0.14 um CMOS image sensor,\u201d IEDM Technical Digest (2004) 997 (DOI: 10.1109\/IEDM.2004.1419356)."},{"key":"25","doi-asserted-by":"publisher","unstructured":"[25] T. Hsu, <i>et al.<\/i>: \u201cDramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring,\u201d IEEE Electron Device Lett. <b>25<\/b> (2004) 375 (DOI: 10.1109\/LED.2004.828995).","DOI":"10.1109\/LED.2004.828995"},{"key":"26","unstructured":"[26] S. G. Wuu, <i>et al.<\/i>: \u201cA leading-edge 0.9 \u00b5m pixel CMOS image sensor technology with backside illumination: Future challenges for pixel scaling,\u201d International Electron Devices Meeting (2010) 14.1.1 (DOI: 10.1109\/IEDM.2010.5703358)."},{"key":"27","unstructured":"[27] T. Shinohara, <i>et al.<\/i>: \u201cThree-dimensional structures for high saturation signals and crosstalk suppression in 1.20 \u00b5m pixel back-illuminated CMOS image sensor,\u201d IEEE International Electron Devices Meeting (2013) 27.4.1 (DOI: 10.1109\/IEDM.2013.6724704)."},{"key":"28","unstructured":"[28] E. Stevens, <i>et al.<\/i>: \u201cLow-crosstalk and low-dark-current CMOS image-sensor technology using a hole-based detector,\u201d IEEE ISSCC Digest of Technical Papers (2008) 60 (DOI: 10.1109\/ISSCC.2008.4523056)."},{"key":"29","doi-asserted-by":"publisher","unstructured":"[29] J. S. Lee, <i>et al.<\/i>: \u201cCharacterization and deblurring of lateral crosstalk in CMOS image sensors,\u201d IEEE Trans. Electron Devices <b>50<\/b> (2003) 2361 (DOI: 10.1109\/TED.2003.819246).","DOI":"10.1109\/TED.2003.819246"},{"key":"30","doi-asserted-by":"publisher","unstructured":"[30] W. Li, <i>et al.<\/i>: \u201cCMOS sensor cross-talk compensation for digital cameras,\u201d IEEE Trans. Consum. Electron. <b>48<\/b> (2002) 292 (DOI: 10.1109\/TCE.2002.1010134).","DOI":"10.1109\/TCE.2002.1010134"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/3\/17_17.20190702\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,2,15]],"date-time":"2020-02-15T03:25:46Z","timestamp":1581737146000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/3\/17_17.20190702\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"references-count":30,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.17.20190702","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020]]}}}