{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,19]],"date-time":"2026-02-19T02:15:12Z","timestamp":1771467312876,"version":"3.50.1"},"reference-count":31,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"7","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2020]]},"DOI":"10.1587\/elex.17.20200001","type":"journal-article","created":{"date-parts":[[2020,3,15]],"date-time":"2020-03-15T22:04:31Z","timestamp":1584309871000},"page":"20200001-20200001","source":"Crossref","is-referenced-by-count":1,"title":["Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET"],"prefix":"10.1587","volume":"17","author":[{"given":"Huilong","family":"Zhu","sequence":"first","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dawei","family":"Bi","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xin","family":"Xie","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhiyuan","family":"Hu","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhengxuan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shichang","family":"Zou","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] G. K. Celler and S. Cristoloveanu: \u201cFrontiers of silicon-on-insulator,\u201d J. Appl. Phys. <b>93<\/b> (2003) 4955 (DOI: 10.1063\/1.1558223).","DOI":"10.1063\/1.1558223"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] J. R. Schwank, <i>et al.<\/i>: \u201cRadiation effects in SOI technologies,\u201d IEEE Trans. Nucl. Sci. <b>50<\/b> (2003) 522 (DOI: 10.1109\/TNS.2003.812930).","DOI":"10.1109\/TNS.2003.812930"},{"key":"3","unstructured":"[3] M. Gaillardin, <i>et al.<\/i>: \u201cRadiation effects in advanced SOI devices: New insights into total ionizing dose and single-event effects,\u201d 2013 IEEE S3S (2013) 1 (DOI: 10.1109\/S3S.2013.6716530)."},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] J. R. Schwank: \u201cAdvantages and limitations of silicon-on-insulator technology in radiation environments,\u201d Microelectron. Eng. <b>36<\/b> (1997) 335 (DOI: 10.1016\/S0167-9317(97)00076-2).","DOI":"10.1016\/S0167-9317(97)00076-2"},{"key":"5","unstructured":"[5] P. Roche, <i>et al.<\/i>: \u201cTechnology downscaling worsening radiation effects in bulk: SOI to the rescue,\u201d IEDM 2013 (2013) 31 (DOI: 10.1109\/IEDM.2013.6724728)."},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] J. R. Schwank, <i>et al.<\/i>: \u201cRadiation effects in MOS oxides,\u201d IEEE Trans. Nucl. Sci. <b>55<\/b> (2008) 1833 (DOI: 10.1109\/TNS.2008.2001040).","DOI":"10.1109\/TNS.2008.2001040"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] R. E. Stahlbush, <i>et al.<\/i>: \u201cElectron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides,\u201d IEEE Trans. Nucl. Sci. <b>39<\/b> (1992) 2086 (DOI: 10.1109\/23.211407).","DOI":"10.1109\/23.211407"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] J. A. Felix, <i>et al.<\/i>: \u201cInfluence of total-dose radiation on the electrical characteristics of SOI MOSFETs,\u201d Microelectron. Eng. <b>72<\/b> (2004) 332 (DOI: 10.1016\/j.mee.2004.01.013).","DOI":"10.1016\/j.mee.2004.01.013"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] J. M. Raf\u00ed, <i>et al.<\/i>: \u201cImpact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors,\u201d Jpn. J. Appl. Phys. <b>43<\/b> (2004) 7984 (DOI: 10.1143\/JJAP.43.7984).","DOI":"10.1143\/JJAP.43.7984"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] S. T. Liu, <i>et al.<\/i>: \u201cWorst case total dose radiation response of 0.35 \u00b5m SOI CMOSFETs,\u201d IEEE Trans. Nucl. Sci. <b>46<\/b> (1999) 1817 (DOI: 10.1109\/23.819159).","DOI":"10.1109\/23.819159"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] W. L. Warren, <i>et al.<\/i>: \u201cParamagnetic defect centers in BESOI and SIMOX buried oxides,\u201d IEEE Trans. Nucl. Sci. <b>40<\/b> (1993) 1755 (DOI: 10.1109\/23.273482).","DOI":"10.1109\/23.273482"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] V. Ferlet-Cavrois, <i>et al.<\/i>: \u201cWorst-case bias during total dose irradiation of SOI transistors,\u201d IEEE Trans. Nucl. Sci. <b>47<\/b> (2000) 2183 (DOI: 10.1109\/23.903751).","DOI":"10.1109\/23.903751"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] J. R. Schwank, <i>et al.<\/i>: \u201cCorrelation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides,\u201d IEEE Trans. Nucl. Sci. <b>47<\/b> (2000) 2175 (DOI: 10.1109\/23.903750).","DOI":"10.1109\/23.903750"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] Z. Liu, <i>et al.<\/i>: \u201cAnalysis of bias effects on the total ionizing dose response in a 180 nm technology,\u201d Nucl. Instrum. Methods Phys. Res. A <b>644<\/b> (2011) 48 (DOI: 10.1016\/j.nima.2011.04.037).","DOI":"10.1016\/j.nima.2011.04.037"},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] I. Chatterjee, <i>et al.<\/i>: \u201cBias dependence of total-dose effects in bulk FinFETs,\u201d IEEE Trans. Nucl. Sci. <b>60<\/b> (2013) 4476 (DOI: 10.1109\/TNS.2013.2287872).","DOI":"10.1109\/TNS.2013.2287872"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] Z.-L. Liu, <i>et al.<\/i>: \u201cBias dependence of a deep submicron NMOSFET response to total dose irradiation,\u201d Chin. Phys. B <b>20<\/b> (2011) 070701 (DOI: 10.1088\/1674-1056\/20\/7\/070701).","DOI":"10.1088\/1674-1056\/20\/7\/070701"},{"key":"17","doi-asserted-by":"publisher","unstructured":"[17] B. Ning, <i>et al.<\/i>: \u201cBias dependence of TID radiation responses of 0.13 \u00b5m partially depleted SOI NMOSFETs,\u201d Microelectron. Reliab. <b>53<\/b> (2013) 259 (DOI: 10.1016\/j.microrel.2012.08.005).","DOI":"10.1016\/j.microrel.2012.08.005"},{"key":"18","doi-asserted-by":"publisher","unstructured":"[18] O. Flament, <i>et al.<\/i>: \u201cBias dependence of FD transistor response to total dose irradiation,\u201d IEEE Trans. Nucl. Sci. <b>50<\/b> (2003) 2316 (DOI: 10.1109\/TNS.2003.822594).","DOI":"10.1109\/TNS.2003.822594"},{"key":"19","unstructured":"[19] J. M. Raf\u00ed, <i>et al.<\/i>: \u201cRadiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 \u00b5m-CMOS partially depleted SOI MOSFETs,\u201d RADECS Papers <b>536<\/b> (2003) 425 (DOI: 10.1109\/RADECS.2003.185711)."},{"key":"20","doi-asserted-by":"publisher","unstructured":"[20] H. E. Boesch, <i>et al.<\/i>: \u201cCharge buildup at high dose and low fields in SIMOX buried oxides,\u201d IEEE Trans. Nucl. Sci. <b>38<\/b> (1991) 1234 (DOI: 10.1109\/23.124098).","DOI":"10.1109\/23.124098"},{"key":"21","doi-asserted-by":"publisher","unstructured":"[21] M. Gaillardin, <i>et al.<\/i>: \u201cImpact of SOI substrate on the radiation response of ultrathin transistors down to the 20 nm node,\u201d IEEE Trans. Nucl. Sci. <b>60<\/b> (2013) 2583 (DOI: 10.1109\/TNS.2013.2249093).","DOI":"10.1109\/TNS.2013.2249093"},{"key":"22","doi-asserted-by":"publisher","unstructured":"[22] Z.-Y. 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Colinge: <i>Silicon-on-Insulator Technology: Materials to VLSI<\/i> (New York, 2004) 3rd ed. 138 (DOI: 10.1007\/978-1-4757-2611-4)."},{"key":"26","unstructured":"[26] V. Ferlet-Cavrois, <i>et al.<\/i>: \u201cTransient radiation effects in CMOS\/SOI transistors and circuits,\u201d RADECS Papers (1997) 360 (DOI: 10.1109\/RADECS.1997.698938)."},{"key":"27","unstructured":"[27] J. R. Schwank: \u201cBasic mechanisms of radiation effects in the natural space environment,\u201d Proc. 1994 NSREC Short Course (1994)."},{"key":"28","doi-asserted-by":"publisher","unstructured":"[28] P. Paillet, <i>et al.<\/i>: \u201cTrapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides,\u201d IEEE Trans. Nucl. Sci. <b>42<\/b> (1995) 2108 (DOI: 10.1109\/23.489260).","DOI":"10.1109\/23.489260"},{"key":"29","doi-asserted-by":"publisher","unstructured":"[29] P. J. McWhorter and P. S. 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Papers <b>56<\/b> (2009) 1870 (DOI: 10.1109\/TCSI.2009.2028411).","DOI":"10.1109\/TCSI.2009.2028411"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/7\/17_17.20200001\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,4,11]],"date-time":"2020-04-11T03:34:02Z","timestamp":1586576042000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/7\/17_17.20200001\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"references-count":31,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.17.20200001","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020]]}}}