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Reigosa, <i>et al.<\/i>: \u201cCapacitive effects in IGBTs limiting their reliability under short circuit,\u201d Microelectronics Reliability <b>76-77<\/b> (217) 485 (DOI: 10.1016\/j.microrel.2017.07.059)."},{"key":"2","unstructured":"[2] Y. Shaoyong, <i>et al.<\/i>: \u201cAn industry-based survey of reliability in power electronic converters, IEEE Trans. Ind. Appl. <b>47<\/b> (2011) 1441 (DOI: 10.1109\/tia.2011.2124436)."},{"key":"3","unstructured":"[3] H. Luo, <i>et al.<\/i>: \u201cModern IGBT gate driving methods for enhancing reliability of highpower converters -- an overview,\u201d Microelectronics Reliability <b>58<\/b> (2016) 141 (DOI: 10.1016\/j.microrel.2015.12.022)."},{"key":"4","unstructured":"[4] P.D. Reigosa, <i>et al.<\/i>: \u201cImproving the shortcircuit reliability in IGBTs: how to mitigate oscillations,\u201d IEEE Trans. Power Electron. <b>33<\/b> (2018) 5603 (DOI: 10.1109\/tpel.2017.2783044)."},{"key":"5","unstructured":"[5] J. Chen, <i>et al.<\/i>: \u201cA smart IGBT gate driver IC with temperature compensated collector current sensing,\u201d IEEE Trans. Power Electron. <b>34<\/b> (2019) 4613 (DOI: 10.1109\/tpel.2018.2865788)."},{"key":"6","unstructured":"[6] X. Li, <i>et al.<\/i>: \u201cIndirect IGBT over-current detection technique via gate voltage monitoring and analysis,\u201d IEEE Trans. Power Electron. <b>34<\/b> (2019) 3615 (DOI: 10.1109\/tpel.2018.2856777)."},{"key":"7","unstructured":"[7] B.-G. Park, <i>et al.<\/i>: \u201cA novel short-circuit detecting scheme using turn-on switching characteristic of IGBT,\u201d IEEE Industry Applications Society Annual Meeting (2008) 1 (DOI: 10.1109\/08IAS.2008.350)."},{"key":"8","unstructured":"[8] E. Flores, <i>et al.<\/i>: \u201cFault detection circuit based on IGBT gate signal,\u201d IEEE Latin America Trans. <b>14<\/b> (2016) 541 (DOI: 10.1109\/Tla.2016.7437190)."},{"key":"9","unstructured":"[9] M.A. Rodr\u00edguez-Blanco, <i>et al.<\/i>: \u201cFault detection for IGBT using adaptive thresholds during the turn-on transient,\u201d IEEE Trans. Ind. Electron. <b>62<\/b> (2015) 1975 (DOI: 10.1109\/Tie.2014.2364154)."},{"key":"10","unstructured":"[10] J.-B. Lee and D.-S. Hyun: \u201cGate voltage pattern analyze for short-circuit protection in IGBT inverters,\u201d 2007 IEEE Power Electronics Specialists Conference (2007) 1 (DOI: 10.1109\/Pesc.2007.4342295)."},{"key":"11","unstructured":"[11] S. Hain and M.-M. Bakran: \u201cNew ultra fast short circuit detection method without using the desaturation process of the power semiconductor,\u201d PCIM Europe 2016 (2016)."},{"key":"12","unstructured":"[12] F. Huang and F. Flett: \u201cIGBT fault protection based on di\/dt feedback control,\u201d 2007 IEEE Power Electronics Specialists Conference (2007) 1 (DOI: 10.1109\/Pesc.2007.4342213)."},{"key":"13","unstructured":"[13] Z. Wang, <i>et al.<\/i>: \u201cA fast overcurrent protection scheme for IGBT modules through dynamic fault current evaluation,\u201d 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2013) (2013) (DOI: 10.1109\/APEC.2013.6520268)."},{"key":"14","unstructured":"[14] Z. Wang, <i>et al.<\/i>: \u201cA di\/dt feedback-based active gate driver for smart switching and fast overcurrent protection of IGBT modules,\u201d IEEE Trans. Power Electron. <b>29<\/b> (2014) 3720 (DOI: 10.1109\/tpel.2013.2278794)."},{"key":"15","unstructured":"[15] N.Q. Tu Vo, <i>et al.<\/i>: \u201cShort-circuit protection for the series-connected switches in high voltage applications,\u201d J. Power Electron. <b>16<\/b> (2016) 1298 (DOI: 10.6113\/jpe.2016.16.4.1298)."},{"key":"16","unstructured":"[16] Fuji Automobile IGBT Module M653 Series 6MBI800XV-075V-01 Application Manual, Fuji Electric Co. (2016)."},{"key":"17","unstructured":"[17] L. Hu, <i>et al.<\/i>: \u201cResearch of an on-line measurement method for high-power IGBT collector current,\u201d J. Power Electron. <b>16<\/b> (2016) 362 (DOI: 10.6113\/jpe.2016.16.1.362)."},{"key":"18","unstructured":"[18] M. Oinonen, <i>et al.<\/i>: \u201cCurrent measurement and short-circuit protection of an IGBT based on module parasitics,\u201d 16th European Conference on Power Electronics and Applications (EPE\u201914-ECCE Europe) (2014) (DOI: 10.1109\/EPE.2014.6910824)."},{"key":"19","unstructured":"[19] A. Radun: \u201cAn alternative low-cost current-sensing scheme for high-current power electronics circuits,\u201d IEEE Trans. Ind. Electron. <b>42<\/b> (1995) 78 (DOI: 10.1109\/41.345849)."},{"key":"20","unstructured":"[20] A. Volke and M. Hornkamp: <i>IGBT Modules: Technologies, Driver and Application<\/i> (Infineon Technologies, Germany, 2012) 2nd ed."},{"key":"21","unstructured":"[21] M. Koga, <i>et al.<\/i>: \u201cApplication-specific micro Rogowski coil for power modules--design tool, novel coil pattern and demonstration,\u201d 9th International Conference on Integrated Power Electronics Systems (2016)."},{"key":"22","unstructured":"[22] K. Hasegawa, <i>et al.<\/i>: \u201cA new output current measurement method with tiny PCB sensors capable of being embedded in an IGBT module,\u201d IEEE Trans. Power Electron. <b>32<\/b> (2017) 1707 (DOI: 10.1109\/tpel.2016.2606111)."},{"key":"23","unstructured":"[23] R. Letor and G. Candeloro Aniceto: \u201cShort circuit behavior of IGBTs correlated to the intrinsic device structure and on the application circuit,\u201d IEEE Trans. Ind. Appl. <b>31<\/b> (1995) 234 (DOI: 10.1109\/28.370268)."},{"key":"24","unstructured":"[24] M. Chen, <i>et al.<\/i>: \u201cAn improved IGBT short-circuit protection method with self-adaptive blanking circuit based on V-CE measurement,\u201d IEEE Trans. Power Electron. <b>33<\/b> (2018) 6126 (DOI: 10.1109\/Tpel.2017.2747587)."},{"key":"25","unstructured":"[25] X. Zhang, <i>et al.<\/i>: \u201cA self-adaptive blanking circuit for IGBT short-circuit protection based on VCE measurement,\u201d 2015 IEEE Energy Conversion Congress and Exposition (ECCE) (2015) (DOI: 10.1109\/ecce.2015.7310242)."},{"key":"26","unstructured":"[26] L. Pierre, <i>et al.<\/i>: \u201cFast over-current protection of high power IGBT modules,\u201d 2005 European Conference on Power Electronics and Applications (2005) (DOI: 10.1109\/epe.2005.219326)."},{"key":"27","unstructured":"[27] R. Graves, <i>et al.<\/i>: \u201cFast, configurable over-current protection for high-power modules,\u201d 2015 IEEE Electric Ship Technologies Symposium (ESTS) (2015) (DOI: 10.1109\/ests.2015.7157914)."},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] B.J. Baliga: <i>Fundamentals of Power Semiconductor Devices<\/i> (2008).","DOI":"10.1007\/978-0-387-47314-7"},{"key":"29","unstructured":"[29] Avago, \u201cAutomotive 2.5 Amp gate drive optocoupler with integrated IGBT DESAT overcurrent sensing, Miller current clamping and UnderVoltage LockOut feedback,\u201d ACPL-34JT datasheet."},{"key":"30","unstructured":"[30] R.S. Chokhawala, <i>et al.<\/i>: \u201cA discussion on IGBT short-circuit behavior and fault protection schemes,\u201d IEEE Trans. Ind. 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