{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T22:21:27Z","timestamp":1775082087406,"version":"3.50.1"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"12","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2020,6,25]]},"DOI":"10.1587\/elex.17.20200159","type":"journal-article","created":{"date-parts":[[2020,6,2]],"date-time":"2020-06-02T22:05:32Z","timestamp":1591135532000},"page":"20200159-20200159","source":"Crossref","is-referenced-by-count":5,"title":["A D-band CMOS power amplifier for short-range data center communication"],"prefix":"10.1587","volume":"17","author":[{"given":"Junren","family":"Pan","sequence":"first","affiliation":[{"name":"School of Physics and Technology, Wuhan University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiang","family":"Luo","sequence":"additional","affiliation":[{"name":"School of Physics and Technology, Wuhan University"},{"name":"Nanjing Electronic Devices Institute"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin","family":"He","sequence":"additional","affiliation":[{"name":"School of Physics and Technology, Wuhan University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guangyin","family":"Feng","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Nanyang Technological University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alit","family":"Apriyana","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Nanyang Technological University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue Ping","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Nanyang Technological University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","unstructured":"[1] D.-H. Kim, <i>et al.<\/i>: \u201cA D-band CMOS amplifier with a new dual-frequency interstage matching technique,\u201d IEEE Trans. Microw. Theory Techn. <b>65<\/b> (2017) 1580 (DOI: 10.1109\/TMTT.2017.2655508)."},{"key":"2","unstructured":"[2] K. Katayama, <i>et al.<\/i>: \u201c133 GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication,\u201d IEEE European Microwave Integrated Circuit Conference (2013) 69."},{"key":"3","unstructured":"[3] H.S. Son, <i>et al.<\/i>: \u201cA D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3 dB gain and 12.2 dBm P<sub>1dB<\/sub> in 65-nm CMOS technology,\u201d IEEE Topical Conference on RF\/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR) (2018) 35 (DOI: 10.1109\/PAWR.2018.8310061)"},{"key":"4","unstructured":"[4] D. Simic and P. Reynaert: \u201cA 14.8 dBm 20.3 dB power amplifier for D-band applications in 40 nm CMOS,\u201d IEEE Radio Frequency Integrated Circuits Symposium (2012) 232 (DOI: 10.1109\/RFIC.2018.8428981)."},{"key":"5","unstructured":"[5] H.S. Son, <i>et al.<\/i>: \u201cA 109 GHz CMOS power amplifier with 15.2 dBm Psat and 20.3 dB gain in 65-nm CMOS technology,\u201d IEEE Microw. Wireless Compon. Lett. <b>26<\/b> (2016) 510 (DOI: 10.1109\/LMWC.2016.2574834)."},{"key":"6","unstructured":"[6] Z. Xu, <i>et al.<\/i>: \u201cA three stage, fully differential 128-157 GHz CMOS amplifier with wide band matching,\u201d IEEE Microw. Wireless Compon. Lett. <b>21<\/b> (2011) 550 (DOI: 10.1109\/LMWC.2011.2163928)."},{"key":"7","unstructured":"[7] C.L. Ko, <i>et al.<\/i>: \u201cA 210-GHz amplifier in 40-nm digital CMOS technology,\u201d IEEE Trans. Microw. Theory Techn. <b>61<\/b> (2013) 2438 (DOI: 10.1109\/TMTT.2013.2260767)."},{"key":"8","unstructured":"[8] M. Seo, <i>et al.<\/i>: \u201cA 150 GHz amplifier with 8 dB gain and +6 dBm P<sub>sat<\/sub> in digital 65 nm CMOS using dummy-prefilled microstrip lines,\u201d IEEE J. Solid-State Circuits <b>44<\/b> (2009) 3410 (DOI: 10.1109\/JSSC.2009.2032273)."},{"key":"9","unstructured":"[9] X. Meng, <i>et al.<\/i>: \u201c142 GHz amplifier with 18.5 dB gain and 7.9 mw DC power in 65 nm CMOS,\u201d Electron. Lett. <b>50<\/b> (2014) 1513 (DOI: 10.1049\/el.2014.2822)."},{"key":"10","unstructured":"[10] N.V. Thienen, <i>et al.<\/i>: \u201cA 160-GHz three-stage fully-differential amplifier in 40-nm CMOS,\u201d IEEE International Conference on Electronics, Circuits and Systems (ICECS) (2014) 144 (DOI: 10.1109\/ICECS.2014.7049942)."},{"key":"11","unstructured":"[11] P.-H. Chen, <i>et al.<\/i>: \u201cA 110-180 GHz broadband amplifier in 65-nm CMOS process,\u201d IEEE MTT-S International Microwave Symposium Digest (MTT) (2013) 1 (DOI: 10.1109\/MWSYM.2013.6697374)."},{"key":"12","unstructured":"[12] G. Liu, <i>et al.<\/i>: \u201cBroadband millimeter-wave LNAs (47-77 GHz and 70-140 GHz) using a T-type matching topology,\u201d IEEE J. Solid-State Circuits <b>48<\/b> (2013) 2022 (DOI: 10.1109\/JSSC.2013.2265500)."},{"key":"13","unstructured":"[13] A. Tang, <i>et al.<\/i>: \u201cA CMOS 135-150 GHz 0.4 dBm EIRP transmitter with 5.1dB P1dB extension using IF envelope feed-forward gain compensation,\u201d 2012 IEEE\/MTT-S International Microwave Symposium Digest (2012) 1 (DOI: 10.1109\/MWSYM.2012.6257760)."},{"key":"14","unstructured":"[14] D.-S. Siao, <i>et al.<\/i>: \u201cA 190-GHz amplifier with gain-boosting technique in 65-nm CMOS,\u201d 2014 IEEE MTT-S International Microwave Symposium (IMS2014) (2014) 1 (DOI: 10.1109\/MWSYM.2014.6848290)."},{"key":"15","unstructured":"[15] M. Fujishima, <i>et al.<\/i>: \u201c98 mW 10 Gbps wireless transceiver chipset with D-band CMOS circuits,\u201d IEEE J. Solid-State Circuits <b>45<\/b> (2014) 2273 (DOI: 10.1109\/JSSC.2013.2261192)."},{"key":"16","unstructured":"[16] B. Heydari, <i>et al.<\/i>: \u201cLow-power mm-wave components up to 104GHz in 90nm CMOS,\u201d 2007 IEEE International Solid-State Circuits Conf. Dig. Tech. Papers (2007) 200 (DOI: 10.1109\/ISSCC.2007.373363)."},{"key":"17","unstructured":"[17] S.T. Nicolson, <i>et al.<\/i>: \u201cA 1.2V, 140GHz receiver with on-die antenna in 65nm CMOS,\u201d 2008 IEEE Radio Frequency Integrated Circuits Symposium (2008) 229 (DOI: 10.1109\/RFIC.2008.4561424)."},{"key":"18","unstructured":"[18] C.W. Byeon, <i>et al.<\/i>: \u201cA 67-mW 10.7-Gb\/s 60-GHz OOK CMOS transceiver for short-range wireless communications,\u201d IEEE Trans. Microw. Theory Techn. <b>61<\/b> (2013) 3391 (DOI: 10.1109\/TMTT.2013.2274962)."},{"key":"19","unstructured":"[19] K. Katayama, <i>et al.<\/i>: \u201cA 300 GHz CMOS transmitter with 32-QAM 17.5 Gb\/s\/ch capability over six channels,\u201d IEEE J. Solid-State Circuits <b>51<\/b> (2016) 3037 (DOI: 10.1109\/JSSC.2016.2602223)."},{"key":"20","unstructured":"[20] Y.-A. Li, <i>et al.<\/i>: \u201cA fully integrated 77GHz FMCW radar system in 65nm CMOS,\u201d 2010 IEEE International Solid-State Circuits Conference (ISSCC) (2010) 216 (DOI: 10.1109\/ISSCC.2010.5433951)."},{"key":"21","unstructured":"[21] G. Feng, <i>et al.<\/i>: \u201cPole-converging intrastage bandwidth extension technique for wideband amplifiers,\u201d IEEE J. Solid-State Circuits <b>52<\/b> (2017) 769 (DOI: 10.1109\/JSSC.2016.2641459)."},{"key":"22","unstructured":"[22] J. Luo, <i>et al.<\/i>: \u201cA D-band amplifier in 65 nm bulk CMOS for short-distance data center communication,\u201d IEEE Access <b>6<\/b> (2018) 53191 (DOI: 10.1109\/ACCESS.2018.2871047)."},{"key":"23","unstructured":"[23] S.T. Nicolson, <i>et al.<\/i>: \u201cSingle-chip W-band SiGe HBT transceivers and receivers for Doppler radar and millimeter-wave imaging,\u201d IEEE J. Solid-State Circuits <b>43<\/b> (2008) 2206 (DOI: 10.1109\/JSSC.2008.2002934)."},{"key":"24","unstructured":"[24] A.M. Mangan, <i>et al.<\/i>: \u201cDe-embedding transmission line measurements for accurate modeling of IC designs,\u201d IEEE Trans. Electron Devices <b>53<\/b> (2006) 235 (DOI: 10.1109\/TED.2005.861726)."},{"key":"25","unstructured":"[25] D. Ahn, <i>et al.<\/i>: \u201cA design of the low-pass filter using the novel microstrip defected ground structure,\u201d IEEE Trans. Microw. Theory Techn. <b>49<\/b> (2001) 86 (DOI: 10.1109\/22.899965)."},{"key":"26","unstructured":"[26] A.A.A. Agung, <i>et al.<\/i>: \u201cAn ultrawideband SPST switch using defected ground structure low pass filter in 65-nm CMOS technology,\u201d Int. J. RF Microw. Comput.-Aided Eng. <b>25<\/b> (2015) 758 (DOI: 10.1002\/mmce.20912)."},{"key":"27","unstructured":"[27] J. Luo, <i>et al.<\/i>: \u201cA D-band SPST switch using parallel-stripline swap with defected ground structure,\u201d IEICE Electron. Express <b>14<\/b> (2017) 1 (DOI: 10.1587\/elex.14.20171104)."},{"key":"28","unstructured":"[28] J. Luo, <i>et al.<\/i>: \u201cA 28 GHz LNA using defected ground structure for 5G application,\u201d Microw. Opt. Technol. Lett. <b>60<\/b> (2018) 1 (DOI: 10.1002\/mop.31112)."},{"key":"29","unstructured":"[29] Z. Hu, <i>et al.<\/i>: \u201cDesign and linearity analysis of a D-band power amplifier in 0.13 <i>\u03bc<\/i>m SiGe BiCMOS technology,\u201d IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (2013) 1 (DOI: 10.1109\/CSICS.2017.8240469)."},{"key":"30","unstructured":"[30] D.B. Hou, <i>et al.<\/i>: \u201cA D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 <i>\u03bc<\/i>m SiGe BiCMOS technology,\u201d IEEE Microw. Wireless Compon. Lett. <b>22<\/b> (2012) 191 (DOI: 10.1109\/LMWC.2012.2188624)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/12\/17_17.20200159\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,6,27]],"date-time":"2020-06-27T03:49:09Z","timestamp":1593229749000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/12\/17_17.20200159\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,6,25]]},"references-count":30,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.17.20200159","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,6,25]]}}}