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Ezzeddine, <i>et al.<\/i>: \u201cThe high voltage\/high power FET (HiVP),\u201d IEEE RFIC Symp. Digest (2003) 215 (DOI: 10.1109\/RFIC.2003.1213929)."},{"key":"2","unstructured":"[2] Z.-M. Tsai, <i>et al.<\/i>: \u201cAn HBT four-cell monolithic stacked power amplifier,\u201d IEEE MTTS Int. Microw. Symp. Digest (2007) 151 (DOI: 10.1109\/MWSYM.2007.380312)."},{"key":"3","unstructured":"[3] C.-C. Shen, <i>et al.<\/i>: \u201cA broadband stacked power amplifier using 2-\u03bcm GaAs HBT process for C-band applications,\u201d 2008 Asia Pacific Microw. Conf. Proc. (2008) (DOI: 10.1109\/APMC.2008.4958388)."},{"key":"4","unstructured":"[4] D. Fritsche, <i>et al.<\/i>: \u201cAnalysis and design of a stacked power amplifier with very high bandwidth,\u201d IEEE Trans. Microw. Theory Techn. <b>60<\/b> (2012) 3223 (DOI: 10.1109\/TMTT.2012.2209439)."},{"key":"5","unstructured":"[5] K. Datta, <i>et al.<\/i>: \u201cA triple-stacked class-E mm-wave SiGe HBT power amplifier,\u201d IEEE MTTS Int. Microw. Symp. Digest (2013) 151 (DOI: 10.1109\/MWSYM.2013.6697457)."},{"key":"6","unstructured":"[6] C. Liu, <i>et al.<\/i>: \u201cAn 890 mW stacked power amplifier using SiGe HBTs for X-band multifunctional chips,\u201d 41st ESSCIRC (2015) (DOI: 10.1109\/ESSCIRC.2015.7313830)."},{"key":"7","unstructured":"[7] M. Squartecchia, <i>et al.<\/i>: \u201cDesign procedure for millimeter-wave InP DHBT stacked power amplifiers,\u201d 2015 INMMiC (2015) (DOI: 10.1109\/INMMIC.2015.7330368)."},{"key":"8","unstructured":"[8] K. Datta, <i>et al.<\/i>: \u201cPerformance limits, design and implementation of mm-wave SiGe HBT class-E and stacked class-E power amplifiers,\u201d IEEE J. Solid-State Circuit <b>49<\/b> (2014) 2150 (DOI: 10.1109\/JSSC.2014.2353800)."},{"key":"9","unstructured":"[9] S.M.A. Ali, <i>et al.<\/i>: \u201cA 38-GHz millimeter-wave double-stacked HBT class-F<sup>-1<\/sup> high-gain power amplifier in 130-nm SiGe-BiCMOS,\u201d IEEE Trans. Microw. Theory Techn. (2020) (DOI: 10.1109\/TMTT.2020.2988874)."},{"key":"10","unstructured":"[10] K.W. Kobayashi, <i>et al.<\/i>: \u201cBaseband to 140-GHz SiGe HBT and 100-GHz InP DHBT broadband triple-stacked distributed amplifiers with active bias terminations,\u201d IEEE J. Solid-State Circuit (2020) (DOI: 10.1109\/JSSC.2020.2988420)."},{"key":"11","unstructured":"[11] J.-H. Chen, <i>et al.<\/i>: \u201cA broadband stacked power amplifier in 45-nm CMOS SOI technology,\u201d IEEE J. Solid-State Circuits <b>48<\/b> (2013) 2775 (DOI: 10.1109\/JSSC.2013.2276135)."},{"key":"12","unstructured":"[12] J.-H. Chen, <i>et al.<\/i>: \u201cA wideband power amplifier in 45 nm CMOS SOI technology for X band applications,\u201d IEEE Microw. Compon. Lett. <b>23<\/b> (2013) 587 (DOI: 10.1109\/LMWC.2013.2279117)."},{"key":"13","unstructured":"[13] H.-T. Dabag, <i>et al.<\/i>: \u201cAnalysis and design of stacked-FET millimeter-wave power amplifiers,\u201d IEEE Trans. Microw. Theory Techn. <b>61<\/b> (2013) 1543 (DOI: 10.1109\/TMTT.2013.2247698)."},{"key":"14","unstructured":"[14] A. Chakrabarti, <i>et al.<\/i>: \u201cHigh-power high-efficiency class-E-like stacked mmWave PAs in SOI and Bulk CMOS: theory and implementation,\u201d IEEE Trans. Microw. Theory Techn. <b>62<\/b> (2014) 1686 (DOI: 10.1109\/TMTT.2014.2327919)."},{"key":"15","unstructured":"[15] M. Fathi, <i>et al.<\/i>: \u201cA stacked 6.5-GHz 29.6-dBm power amplifier in standard 65-nm CMOS,\u201d Proc. IEEE Custom Integr. Circuits Conf. (2010) 1 (DOI: 10.1109\/CICC.2010.5617403)."},{"key":"16","unstructured":"[16] H.-F. Wu, <i>et al.<\/i>: \u201cAnalysis and design of an ultrabroadband stacked power amplifier in CMOS technology,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>63<\/b> (2016) 49 (DOI: 10.1109\/TCSII.2015.2504926)."},{"key":"17","unstructured":"[17] J.P. Aikio, <i>et al.<\/i>: \u201cKa-Band 3-stack power amplifier with 18.8 dBm Psat and 23.4% PAE using 22nm CMOS FDSOI technology,\u201d IEEE Topical Conf. RF\/Microw. Power Amp. Radio Wireless (2019) (DOI: 10.1109\/PAWR.2019.8708719)."},{"key":"18","unstructured":"[18] Y. Chang, <i>et al.<\/i>: \u201cA Ka-band stacked power amplifier with 24.8-dBm output power and 24.3% PAE in 65-nm CMOS technology,\u201d IEEE MTT-S Inter. Microw. Symp. Dig. (2019) 316 (DOI: 10.1109\/MWSYM.2019.8700937)."},{"key":"19","unstructured":"[19] H. Wu, <i>et al.<\/i>: \u201cA 4-10 GHz fully-integrated stacked GaAs pHEMT power amplifier,\u201d IEEE MTT-S Inter. Microw. Symp. (2017) 24 (DOI: 10.1109\/MWSYM.2017.8059091)."},{"key":"20","unstructured":"[20] C. Lee, <i>et al.<\/i>: \u201cA 18 GHz broadband stacked FET power amplifier using 130 nm metamorphic HEMTs,\u201d IEEE Microw. Compon. Lett. <b>19<\/b> (2009) 828 (DOI: 10.1109\/LMWC.2009.2033533)."},{"key":"21","unstructured":"[21] M. Gavell, <i>et al.<\/i>: \u201cA high voltage mm-wave stacked HEMT power amplifier in 0.1\u03bcm InGaAs technology,\u201d IEEE MTT-S Inter. Microw. Symp. (2015) 1 (DOI: 10.1109\/MWSYM.2015.7166754)."},{"key":"22","unstructured":"[22] F. Thome, <i>et al.<\/i>: \u201cA 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells,\u201d IEEE MTT-S Inter. Microw. Symp. (2017) 1695 (DOI: 10.1109\/MWSYM.2017.8058967)."},{"key":"23","unstructured":"[23] C.-C. Shen, <i>et al.<\/i>: \u201cA monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT\/common-emitter and common-gate stacked power amplifier,\u201d IEEE Microw. Compon. Lett. <b>22<\/b> (2012) 474 (DOI: 10.1109\/LMWC.2012.2210034)."},{"key":"24","unstructured":"[24] G.-Y. Chen, <i>et al.<\/i>: \u201cDseign and analysis of a Ka-band monolithic high efficiency frequency quadrupler using GaAs HBT-HEMT common-base\/common-source balance topology,\u201d IEEE Trans. Microw. Theory Techn. <b>61<\/b> (2013) 3674 (DOI: 10.1109\/TMTT.2013.2277991)."},{"key":"25","unstructured":"[25] H.-Y. Chang, <i>et al.<\/i>: \u201cDesign and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascade gain stage,\u201d IEEE Trans. Microw. Theory Techn. <b>59<\/b> (2011) 443 (DOI: 10.1109\/TMTT.2010.2092786)."},{"key":"26","unstructured":"[26] S.-H. Chen, <i>et al.<\/i>: \u201cA monolithic DC-31 GHz distributed amplifier using cascode HBT-NMOS gain cell in 0.18\u03bcm SiGe technology,\u201d APMC Dig. (2012) 211 (DOI: 10.1109\/APMC.2012.6421549)."},{"key":"27","unstructured":"[27] G.-Y. Chen, <i>et al.<\/i>: \u201c2.8 dB conversion gain broadband HBT-HEMT balanced frequency tripler with high harmonic suppression,\u201d Electron. Lett. <b>50<\/b> (2014) 812 (DOI: 10.1049\/el.2014.0678)."},{"key":"28","unstructured":"[28] C.-H. Lu, <i>et al.<\/i>: \u201cMonolithic 2-\u03bcm\/0.5-\u03bcm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs),\u201d APMC Dig. (2012) 1235 (DOI: 10.1109\/APMC.2012.421880)."},{"key":"29","unstructured":"[29] X. Xia, <i>et al.<\/i>: \u201cAn improved colpitts VCO with low phase noise using a GaAs BiHEMT process,\u201d IEEE Microw. Compon. Lett. <b>30<\/b> (2020) 70 (DOI: 10.1109\/LMWC.2019.2953578)."},{"key":"30","unstructured":"[30] K.W. Kobayashi, <i>et al.<\/i>: \u201cA monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier,\u201d IEEE J. Solid-State Circuit <b>31<\/b> (1996) 714 (DOI: 10.1109\/4.509854)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/13\/17_17.20200172\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,7,11]],"date-time":"2020-07-11T03:29:58Z","timestamp":1594438198000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/13\/17_17.20200172\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,7,10]]},"references-count":30,"journal-issue":{"issue":"13","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.17.20200172","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,7,10]]}}}