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Wu, <i>et al.<\/i>: \u201cNormally-off tri-gate GaN MIS-HEMTs with 0.76 m<i>\u03a9<\/i>\u00b7cm<sup>2<\/sup> specific on-resistance for power device applications,\u201d IEEE Trans. Electron Devices <b>66<\/b> (2019) 3441 (DOI: 10.1109\/TED.2019.2922301)."},{"key":"2","unstructured":"[2] Q. Zhou, <i>et al.<\/i>: \u201cTri-gated hybrid anode AlGaN\/GaN power diode with intrinsic low turn-on voltage and ultralow reverse leakage current,\u201d IEEE Trans. Electron Devices <b>67<\/b> (2020) 1712 (DOI: 10.1109\/TED.2020.2971384)."},{"key":"3","unstructured":"[3] A. Binder, <i>et al.<\/i>: \u201cP.M. effects of heterostructure design on performance for low voltage GaN power HEMTs,\u201d ECS Journal of Solid State Science and Technology <b>8<\/b> (2019) Q15 (DOI: 10.1149\/2.0141902jss)."},{"key":"4","unstructured":"[4] W. Yang, <i>et al.<\/i>: \u201cSubstrate bias effect on dynamic characteristics of a monolithically integrated GaN half-bridge,\u201d 2020 IEEE International Reliability Physics Symposium (IRPS) (2020) 1 (DOI: 10.1109\/IRPS45951.2020.9128309)."},{"key":"5","unstructured":"[5] W. Yang, <i>et al.<\/i>: \u201cLow-side GaN power device dynamic Ron characteristics under different substrate biases,\u201d 2019 IEEE International Reliability Physics Symposium (IRPS) (2019) 1 (DOI: 10.1109\/IRPS.2019.8720433)."},{"key":"6","unstructured":"[6] Y. Uemoto, <i>et al.<\/i>: \u201cGate injection transistor (GIT)--a normally-off AlGaN\/GaN power transistor using conductivity modulation,\u201d IEEE Trans. Electron Devices <b>54<\/b> (2007) 3393 (DOI: 10.1109\/TED.2007.908601)."},{"key":"7","unstructured":"[7] I. 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Yang, <i>et al.<\/i>: \u201cCV measurement under different frequencies and pulse-mode voltage stress to reveal shallow and deep trap effects of GaN HEMTs,\u201d 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2018) 103 (DOI: 10.1109\/WiPDA.2018.8569206)."},{"key":"15","unstructured":"[15] W. Yang, <i>et al.<\/i>: \u201cExperimental evaluation of time-dependent dielectric breakdown for GaN MIS HEMTs under various substrate biases,\u201d 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2019) 277 (DOI: 10.1109\/WiPDA46397.2019.8998949)."},{"key":"16","unstructured":"[16] W. Yang, <i>et al.<\/i>: \u201cESD behavior of GaN-on-Si power devices under TLP\/VFTLP measurements,\u201d 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2019) 171 (DOI: 10.1109\/WiPDA46397.2019.8998950)."},{"key":"17","unstructured":"[17] C.H. 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Denais, <i>et al.<\/i>: \u201cOn-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET\u2019s,\u201d IEEE International Electron Devices Meeting (IEDM) (2004) 109 (DOI: 10.1109\/IEDM.2004.1419080)."},{"key":"22","unstructured":"[22] A. Sarua, <i>et al.<\/i>: \u201cThermal boundary resistance between GaN substrate in AlGaN\/GaN electronic devices,\u201d IEEE Trans. Electron Devices <b>54<\/b> (2007) 3152 (DOI: 10.1109\/TED.2007.908874)."},{"key":"23","unstructured":"[23] X. Huang, <i>et al.<\/i>: \u201cExperimental study of 650V AlGaN\/GaN HEMT short-circuit safe operating area (SCSOA),\u201d 2014 IEEE 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2014) 273 (DOI: 10.1109\/ISPSD.2014.6856029)."},{"key":"24","unstructured":"[24] J. 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Chini, <i>et al.<\/i>: \u201cDeep levels characterization in GaN HEMTs--part II: experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy,\u201d IEEE Trans. Electron Devices <b>60<\/b> (2013) 3176 (DOI: 10.1109\/TED.2013.2278290)."},{"key":"28","unstructured":"[28] M. J. Uren, <i>et al.<\/i>: \u201cBuffer design to minimize current collapse in GaN\/AlGaN HFETs,\u201d IEEE Trans. Electron Devices <b>59<\/b> (2012) 3327 (DOI: 10.1109\/TED.2012.2216535)."},{"key":"29","unstructured":"[29] A. Chini, <i>et al.<\/i>: \u201cExperimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers,\u201d IEEE Trans. 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