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Waser, <i>et al.<\/i>: \u201cRedox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges,\u201d Adv. Mater. <b>21<\/b> (2009) 2632 (DOI: 10.1002\/adma.200900375)."},{"key":"2","unstructured":"[2] C.S. Hwang\uff1a\u201cProspective of semiconductor memory devices: from memory system to materials,\u201d Adv. Electron. Mater. <b>1<\/b> (2015) 1400056 (DOI: 10.1002\/aelm.201400056)."},{"key":"3","unstructured":"[3] L. Chua\uff1a\u201cMemristor: the missing circuit element,\u201d IEEE Trans. Circuit Theory <b>18<\/b> (1971) 507 (DOI: 10.1109\/TCT.1971.1083337)."},{"key":"4","unstructured":"[4] D.B. Strukov, <i>et al.<\/i>: \u201cThe missing memristor found,\u201d Nature <b>453<\/b> (2008) 80 (DOI: 10.1038\/nature06932)."},{"key":"5","unstructured":"[5] R. Waser and M. Aono\uff1a\u201cNanoionics-based resistive switching memories,\u201d Nanoscience and Technology: A Collection of Reviews from Nature Journals <b>1<\/b> (2010) 158 (DOI: 10.1142\/9789814287005_0016)."},{"key":"6","unstructured":"[6] M. Prezioso, <i>et al.<\/i>: \u201cTraining and operation of an integrated neuromorphic network based on metal-oxide memristors,\u201d Nature <b>521<\/b> (2015) 61 (DOI: 10.1038\/nature14441)."},{"key":"7","unstructured":"[7] E.R. Zhou, <i>et al.<\/i>: \u201cMemristive spiking neural networks trained with unsupervised STDP,\u201d Electronics <b>7<\/b> (2018) 396 (DOI: 10.3390\/electronics7120396)."},{"key":"8","unstructured":"[8] L. Liu, <i>et al.<\/i>: \u201cDesigning high-performance storage in HfO<sub>2<\/sub>\/BiFeO<sub>3<\/sub> memristor for artificial synapse applications,\u201d Adv. Electron. Mater. <b>6<\/b> (2020) 1901012 (DOI: 10.1002\/aelm.201901012)."},{"key":"9","unstructured":"[9] N. Xu, <i>et al.<\/i>: \u201cFully functional logic-in-memory operations based on a reconfigurable finite-state machine using a single memristor,\u201d Adv. Electron. Mater. <b>4<\/b> (2018) 1800189 (DOI: 10.1002\/aelm.201800189)."},{"key":"10","unstructured":"[10] N. Xu, <i>et al.<\/i>: \u201cTime-efficient stateful dual-bit-memristor logic,\u201d physica status solidi (RRL)-Rapid Research Letters <b>13<\/b> (2019) 1900033 (DOI: 10.1002\/pssr.201900033)."},{"key":"11","unstructured":"[11] E.R. Zhou, <i>et al.<\/i>: \u201cAn improved memristor model for brain-inspired computing,\u201d Chinese Phys. B <b>26<\/b> (2017) 118502 (DOI: 10.1088\/1674-1056\/26\/11\/118502)."},{"key":"12","unstructured":"[12] S. Jia, <i>et al.<\/i>: \u201cUltrahigh drive current and large selectivity in GeS selector,\u201d Nat. Commun. <b>11<\/b> (2020) 4636 (DOI: 10.1038\/s41467-020-18382-z)."},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] X. Zhu, <i>et al.<\/i>: \u201cPerforming stateful logic on memristor memory,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>60<\/b> (2013) 682 (DOI: 0.1109\/TCSII.2013.2273837).","DOI":"10.1109\/TCSII.2013.2273837"},{"key":"14","unstructured":"[14] J. Zhou, <i>et al.<\/i>: \u201cA memristor-based architecture combining memory and image processing,\u201d Sci. China Inf. Sci. <b>57<\/b> (2014) 1 (DOI: 10.1007\/s11432-013-4887-5)."},{"key":"15","unstructured":"[15] T. Liu, <i>et al.<\/i>: \u201cA 130.7mm<sup>2<\/sup> 2-layer 32Gb ReRAM memory device in 24nm technology,\u201d ISSCC Dig. Tech. Papers (2013) 210 (DOI: 10.1109\/ISSCC.2013.6487703)."},{"key":"16","unstructured":"[16] Z. Wang, <i>et al.<\/i>: \u201cElectroforming-free artificial synapses based on proton conduction in <i>\u03b1<\/i>-MoO<sub>3<\/sub> films,\u201d Adv. Electron. Mater. <b>6<\/b> (2020) 1901290 (DOI: 10.1002\/aelm.201901290)."},{"key":"17","unstructured":"[17] S. Kumar and C. Rath\uff1a\u201cOxygen vacancy mediated stabilization of cubic phase at room temperature and resistive switching effect in Sm-and Dy-Doped HfO<sub>2<\/sub> thin film,\u201d physica status solidi (a) <b>217<\/b> (2020) 1900756 (DOI: 10.1002\/pssa.201900756)."},{"key":"18","unstructured":"[18] Y. Sun, <i>et al.<\/i>: \u201cHybrid channel induced forming-free performance in nanocrystalline-Si:H\/a-SiNx:H resistive switching memory,\u201d Nanotechnology <b>30<\/b> (2019) 365701 (DOI: 10.1088\/1361-6528\/ab2507)."},{"key":"19","unstructured":"[19] X. Zhang, <i>et al.<\/i>: \u201cForming-free performance of a-SiNx:H-based resistive switching memory obtained by oxygen plasma treatment,\u201d Nanotechnology <b>29<\/b> (2018) 245701 (DOI: 10.1088\/1361-6528\/aab9e1)."},{"key":"20","unstructured":"[20] Q. Luo, <i>et al.<\/i>: \u201cSelf-rectifying and forming-free resistive-switching device for embedded memory application,\u201d IEEE Electron Device Lett. <b>39<\/b> (2018) 664 (DOI: 10.1109\/LED.2018.2821162)."},{"key":"21","unstructured":"[21] K.C. Kao, <i>et al.<\/i>: <i>Electrical Transport in Solids<\/i> (Pergamon Press, Oxford, 1981) 1st ed. 150."},{"key":"22","unstructured":"[22] B.B. Yang, <i>et al.<\/i>: \u201cA method of generating random bits by using an electronic bipolar memristor,\u201d Chinese Phys. B <b>29<\/b> (2020) 048505 (DOI: 10.1088\/1674-1056\/ab77fd)."},{"key":"23","unstructured":"[23] Y.L. Hsieh, <i>et al.<\/i>: \u201cSolution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled,\u201d Nanotechnology <b>30<\/b> (2019) 445702 (DOI: 10.1088\/1361-6528\/ab3606)."},{"key":"24","unstructured":"[24] Y.F. Qi, <i>et al.<\/i>: \u201cEnhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method,\u201d Solid-State Electronics <b>158<\/b> (2019) 28 (DOI: 10.1016\/j.sse.2019.05.007)."},{"key":"25","unstructured":"[25] X. Wang, <i>et al.<\/i>: \u201cImproved resistive switching characteristics of atomic layer deposited Al<sub>2<\/sub>O<sub>3<\/sub>\/La<sub>2<\/sub>O<sub>3<\/sub>\/Al<sub>2<\/sub>O<sub>3<\/sub> multi-stacked films with Al<sup>+<\/sup> implantation,\u201d J Mater. Sci.: Mater. Electron <b>30<\/b> (2019) 12577 (DOI: 10.1007\/s10854-019-01618-0)."},{"key":"26","unstructured":"[26] Y. Abbas, <i>et al.<\/i>: \u201cTailored nanoplateau and nanochannel structures using solution-processed rutile TiO<sub>2<\/sub> thin films for complementary and bipolar switching characteristics,\u201d Nanoscale <b>11<\/b> (2019) 13815 (DOI: 10.1039\/C9NR03465J)."},{"key":"27","unstructured":"[27] K.M. Kim, <i>et al.<\/i>: \u201cA detailed understanding of the electronic bipolar resistance switching behavior in Pt\/TiO<sub>2<\/sub>\/Pt structure,\u201d Nanotechnology <b>22<\/b> (2011) 254010 (DOI: 10.1088\/0957-4484\/22\/25\/254010)."},{"key":"28","unstructured":"[28] X.M. Wu, <i>et al.<\/i>: \u201cDielectric constant dependence of Poole-Frenkel potential in tantalum oxide thin films,\u201d Mater. Chem. Phys. <b>38<\/b> (1994) 297 (DOI: 10.1016\/0254-0584(94)90205-4)."},{"key":"29","unstructured":"[29] A. Prakash, <i>et al.<\/i>: \u201cImprovement of uniformity of resistive switching parameters by selecting the electroformation polarity in IrO<sub>x<\/sub>\/TaO<sub>x<\/sub>\/WO<sub>x<\/sub>\/W structure,\u201d Jpn. J. Appl. Phys. <b>51<\/b> (2012) 04DD06 (DOI: 10.1143\/JJAP.51.04DD06)."},{"key":"30","unstructured":"[30] C. Chen, <i>et al.<\/i>: \u201cOxygen migration induced resistive switching effect and its thermal stability in W\/TaO<sub>x<\/sub>\/Pt structure,\u201d Appl. Phys. Lett. <b>100<\/b> (2012) 253509 (DOI: 10.1063\/1.4730601)."},{"key":"31","unstructured":"[31] M. Terai, <i>et al.<\/i>: \u201cResistance controllability of Ta<sub>2<\/sub>O<sub>5<\/sub>\/TiO<sub>2<\/sub> stack ReRAM for low-voltage and multilevel operation,\u201d IEEE Electron Device Lett. <b>31<\/b> (2010) 204 (DOI: 10.1109\/LED.2009.2039021)."},{"key":"32","unstructured":"[32] Z. 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