{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,10]],"date-time":"2026-05-10T05:46:14Z","timestamp":1778391974755,"version":"3.51.4"},"reference-count":77,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"22","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2020,11,25]]},"DOI":"10.1587\/elex.17.20202002","type":"journal-article","created":{"date-parts":[[2020,11,8]],"date-time":"2020-11-08T22:08:00Z","timestamp":1604873280000},"page":"20202002-20202002","source":"Crossref","is-referenced-by-count":16,"title":["Silicon photonics platforms for optical communication systems, outlook on future developments"],"prefix":"10.1587","volume":"17","author":[{"given":"Hiroyuki","family":"Tsuda","sequence":"first","affiliation":[{"name":"Dept. of Electronics and Electrical Engineering, Keio University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","unstructured":"[1] H. Takeuchi, <i>et al.<\/i>: \u201cMonolithic integrated coherent receiver on InP substrate,\u201d Photon. Technol. Lett. <b>1<\/b> (1989) 398 (DOI: 10.1109\/68.43392)."},{"key":"2","unstructured":"[2] T. 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Horikawa, <i>et al.<\/i>, \u201cThe impacts of fabrication error in Si wire-waveguides on spectral variation of coupled resonator optical waveguides,\u201d Microelectron. Eng. <b>156<\/b> (2016) 46 (DOI: 10.1016\/j.mee.2015.11.015)."},{"key":"26","unstructured":"[26] K. Sato and H. Tsuda: \u201cMultistage silicon wavelength multi\/demulti-plexer using an arrayed-waveguide grating and Bragg grating filters,\u201d 2019 International Conference on Photonics in Switching and Computing (PSC) (2019) TuF2-3 (DOI: 10.23919\/PS.2019.8818128)."},{"key":"27","unstructured":"[27] D. Dai and J.E. Bowers: \u201cNovel concept for ultracompact polarization splitter-rotator based on silicon nanowires,\u201d Opt. Express <b>19<\/b> (2011) 10940 (DOI: 10.1364\/OE.19.010940)."},{"key":"28","unstructured":"[28] W.D. Sacher, <i>et al.<\/i>: \u201cPolarization rotator-splitters in standard active silicon photonics platforms,\u201d Opt. Express <b>22<\/b> (2014) 3779 (DOI: 10.1364\/OE.22.003777)."},{"key":"29","unstructured":"[29] D. Dai and H. Wu: \u201cRealization of a compact polarization splitter-rotator on silicon,\u201d Opt. Lett. <b>41<\/b> (2016) 2346 (DOI: 10.1364\/OL.41.002346)."},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] J. Hasegawa, <i>et al.<\/i>: \u201c32-Port 5.5%-<i>\u0394<\/i> silica-based connecting device for low-loss coupling between SMFs and silicon waveguides,\u201d Optical Fiber Communication Conference (2018) Tu3A.4 (DOI: doi.org\/10.1364\/OFC.2018.Tu3A.4).","DOI":"10.1364\/OFC.2018.Tu3A.4"},{"key":"31","unstructured":"[31] Y. Maegami, <i>et al.<\/i>: \u201cSimple and fully CMOS-compatible low-loss fiber coupling structure for a silicon photonics platform,\u201d Opt. Lett. <b>45<\/b> (2020) 2095 (DOI: 10.1364\/OL.388267)."},{"key":"32","unstructured":"[32] P. Granestrand, <i>et al.<\/i>: \u201cPigtailed tree-structured 8<i>\u00d7<\/i>8 LiNbO<sub>3<\/sub> switch matrix with 112 digital optical switches,\u201d Photon. Technol. Lett. <b>6<\/b> (1994) 71 (DOI: 10.1109\/68.265893)."},{"key":"33","unstructured":"[33] H. Asakura, <i>et al.<\/i>: \u201cHigh-speed wavelength selective operation of PLZT-based arrayed-waveguide grating,\u201d Electron. Lett. <b>48<\/b> (2012) 1009 (DOI: 10.1049\/el.2012.1292)."},{"key":"34","unstructured":"[34] K. Nashimoto, <i>et al.<\/i>: \u201cNano-second response, polarization insensitive and low-power consumption PLZT 4<i>\u00d7<\/i>4 matrix optical switch,\u201d 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (2011) OThD3 (DOI: 10.1364\/OFC.2011.OThD3)."},{"key":"35","unstructured":"[35] S. Sohma, <i>et al.<\/i>: \u201cSilica-based PLC type 32<i>\u00d7<\/i>32 optical matrix switch,\u201d European Conference on Optical Communications (2006) Tu.4.4.3 (DOI: 10.1109\/ECOC.2006.4801113)."},{"key":"36","unstructured":"[36] K. Tanizawa, <i>et al.<\/i>: \u201cSilicon photonic 32<i>\u00d7<\/i>32 strictly-non-blocking blade switch and its full path characterization,\u201d 21st OptoElectronics and Communications Conference (2016) PD2-3."},{"key":"37","unstructured":"[37] K. Suzuki, <i>et al.<\/i>: \u201cLow-loss, low-crosstalk, and large-scale optical switch based on silicon photonics,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 233 (DOI: 10.1109\/JLT.2019.2934768)."},{"key":"38","unstructured":"[38] K. Suzuki, <i>et al.<\/i>: \u201cLow-insertion-loss and power-efficient 32<i>\u00d7<\/i>32 silicon photonics switch with extremely high-<i>\u0394<\/i> silica PLC connector,\u201d J. Lightw. Technol. <b>37<\/b> (2019) 116 (DOI: 10.1109\/JLT.2018.2867575)."},{"key":"39","unstructured":"[39] K. Suzuki, <i>et al.<\/i>: \u201cNonduplicate polarization-diversity 32<i>\u00d7<\/i>32 silicon photonics switch based on a SiN\/Si double-layer platform,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 226 (DOI: 10.1109\/JLT.2019.2934763)."},{"key":"40","unstructured":"[40] T.J. Seok, <i>et al.<\/i>: \u201cWafer-scale silicon photonic switches beyond die size limit,\u201d Optica <b>6<\/b> (2019) 490 (DOI: 10.1364\/OPTICA.6.000490)."},{"key":"41","unstructured":"[41] S. Han, <i>et al.<\/i>: \u201cLarge-scale polarization-insensitive silicon photonic MEMS switches,\u201d J. Lightw. Technol. <b>36<\/b> (2018) 1824 (DOI: 10.1109\/JLT.2018.2791502)."},{"key":"42","unstructured":"[42] T. Yoshida, <i>et al.<\/i>: \u201cSwitching characteristics of a 100-GHz-spacing integrated 40-<i>\u03bb<\/i> 1\u00d74 wavelength selective switch,\u201d Photon. Technol. Lett. <b>26<\/b> (2014) 451 (DOI: 10.1109\/LPT.2013.2295847)."},{"key":"43","unstructured":"[43] C.R. Doerr, <i>et al.<\/i>: \u201cMonolithic flexible-grid 1\u00d72 wavelength-selective switch in silicon photonics,\u201d J. Lightw. Technol. <b>30<\/b> (2012) 473 (DOI: 10.1109\/JLT.2011.2173557)."},{"key":"44","unstructured":"[44] F. Nakamura, <i>et al.<\/i>: \u201cSilicon photonics based 1<i>\u00d7<\/i>2 wavelength selective switch using fold-back arrayed-waveguide gratings,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180532 (DOI: 10.1587\/elex.15.20180532)."},{"key":"45","unstructured":"[45] F. Nakamura, <i>et al.<\/i>: \u201cCharacteristics of 1<i>\u00d7<\/i>2 silicon wavelength selective switch using arrayed-waveguide gratings with fold-back waveguides,\u201d The 18th International Conference on Optical Communications and Networks (ICOCN 2019) (2019) W2B.4 (DOI: 10.1109\/ICOCN.2019.8934265)."},{"key":"46","unstructured":"[46] F. Nakamura, <i>et al.<\/i>: \u201cIntegrated silicon photonic wavelength-selective switch using wavefront control waveguides,\u201d Opt. Express <b>26<\/b> (2018) 13573 (DOI: 10.1364\/OE.26.013573)."},{"key":"47","unstructured":"[47] K. Ikeda, <i>et al.<\/i>: \u201cSilicon photonics wavelength selective switch with unlimited free spectral range,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 3268 (DOI: 10.1109\/JLT.2020.2989379)."},{"key":"48","unstructured":"[48] G. Cong, <i>et al.<\/i>: \u201cSilicon traveling-wave Mach-Zehnder modulator under distributed-bias driving,\u201d Opt. Lett. <b>43<\/b> (2018) 403 (DOI: 10.1364\/OL.43.000403)."},{"key":"49","unstructured":"[49] C. Li, <i>et al.<\/i>: \u201cA 3D-integrated 56 Gb\/s NRZ\/PAM4 reconfigurable segmented Mach-Zehnder modulator-based Si-photonics transmitter,\u201d 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (2018) 32 (DOI: 10.1109\/BCICTS.2018.8551089)."},{"key":"50","unstructured":"[50] S. Tanaka, <i>et al.<\/i>: \u201cUltralow-power (1.59 mW\/Gbps), 56-Gbps PAM4 operation of Si photonic transmitter integrating segmented PIN Mach-Zehnder modulator and 28-nm CMOS driver,\u201d J. Lightw. Technol. <b>36<\/b> (2018) 1275 (DOI: 10.1109\/JLT.2018.2799965)."},{"key":"51","unstructured":"[51] H. Li, <i>et al.<\/i>: \u201cA 112 Gb\/s PAM4 silicon photonics transmitter with microring modulator and CMOS driver,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 131 (DOI: 10.1109\/JLT.2019.2938731)."},{"key":"52","unstructured":"[52] Y. Hinakura, <i>et al.<\/i>: \u201cElectro-optic phase matching in a Si photonic crystal slow light modulator using meander-line electrodes,\u201d Opt. Express <b>26<\/b> (2018) 11538 (DOI: 10.1364\/OE.26.011538)."},{"key":"53","unstructured":"[53] Y. Hinakura, <i>et al.<\/i>: \u201c64 Gbps Si photonic crystal slow light modulator by electro-optic phase matching,\u201d Opt. Express <b>27<\/b> (2019) 14321 (DOI: 10.1364\/OE.27.014321)."},{"key":"54","unstructured":"[54] I. Garc\u00eda L\u00f3pez, <i>et al.<\/i>: \u201cMonolithically integrated Si photonics transmitters in 0.25 \u00b5m BiCMOS platform for high-speed optical communications,\u201d 2018 IEEE\/MTT-S International Microwave Symposium - IMS (2018) 1312 (DOI: 10.1109\/MWSYM.2018.8439351)."},{"key":"55","unstructured":"[55] Y. Urino, <i>et al.<\/i>: \u201cFirst demonstration of athermal silicon optical interposers with quantum dot lasers operating up to 125\u00b0C,\u201d J. Lightw. Technol. <b>33<\/b> (2015) 1223 (DOI: 10.1109\/JLT.2014.2380811)."},{"key":"56","unstructured":"[56] Y. Arakawa and H. Sakaki: \u201cMultidimensional quantum well laser and temperature dependence of its threshold current,\u201d Appl. Phys. Lett. <b>40 <\/b>(1982) 939 (DOI: 10.1063\/1.92959)."},{"key":"57","unstructured":"[57] N. Dupuis, <i>et al.<\/i>: \u201cA 4 <i>\u00d7<\/i> 4 Electrooptic silicon photonic switch fabric with net neutral insertion loss,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 178 (DOI: 10.1109\/JLT.2019.2945678)."},{"key":"58","unstructured":"[58] T. Matsumoto, <i>et al.<\/i>: \u201cHybrid-integration of SOA on silicon photonics platform based on flip-chip bonding,\u201d J. Lightw. Technol. <b>37<\/b> (2019) 307 (DOI: 10.1109\/JLT.2018.2870128)."},{"key":"59","unstructured":"[59] T. Nakahara, <i>et al.<\/i>: \u201cHybrid integration of smart pixels by using polyimide bonding: demonstration of a GaAs p-i-n photodiode\/CMOS receiver,\u201d J. Sel. Top. Quantum Electron. <b>5<\/b> (1999) 209 (DOI: 10.1109\/2944.778287)."},{"key":"60","unstructured":"[60] S. Matsuo, <i>et al.<\/i>: \u201cDirectly modulated buried heterostructure DFB laser on SiO<sub>2<\/sub>\/Si substrate fabricated by regrowth of InP using bonded active layer,\u201d Opt. Express <b>22<\/b> (2014) 12139 (DOI: 10.1364\/OE.22.012139)."},{"key":"61","unstructured":"[61] T. Aihara, <i>et al.<\/i>: \u201cMach-Zehnder modulator using membrane InGaAsP phase shifters and SOAs inside interferometer arms on Si photonics platform,\u201d 2020 Optical Fiber Communications Conference and Exhibition (OFC) (2020) M2B.5 (DOI: 10.1364\/OFC.2020.M2B.5)."},{"key":"62","unstructured":"[62] T. Hiraki, <i>et al.<\/i>: \u201cMembrane InGaAsP Mach-Zehnder modulator integrated with optical amplifier on Si platform,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 3030 (DOI: 10.1109\/JLT.2020.2977426)."},{"key":"63","unstructured":"[63] M. Sugo, <i>et al.<\/i>: \u201cRoom-temperature operation of an InGaAsP double-hetero structure laser emitting at 1.55 \u00b5m on a Si substrate,\u201d Appl. Phys. Lett. <b>57<\/b> (1990) 593 (DOI: 10.1063\/1.103608)."},{"key":"64","unstructured":"[64] S. Sun, <i>et al.<\/i>: \u201c120 Gbs<sup>-1<\/sup> hybrid silicon and lithium niobate modulators with on-chip termination resistor,\u201d 2020 Optical Fiber Communications Conference and Exhibition (OFC) (2020) M2B.7 (DOI: 10.1364\/OFC.2020.M2B.7)."},{"key":"65","unstructured":"[65] M. He, <i>et al.<\/i>: \u201cHigh-performance hybrid silicon and lithium niobate Mach-Zehnder modulators for 100 Gbits<sup>-1<\/sup> and beyond,\u201d Nature Photonics <b>13<\/b> (2019) 359 (DOI: 10.1038\/s41566-019-0378-6)."},{"key":"66","unstructured":"[66] V. Sorianello, <i>et al.<\/i>: \u201cGraphene on silicon modulators,\u201d J. Lightw. Technol. <b>38<\/b> (2020) 2782 (DOI: 10.1109\/JLT.2020.2974189)."},{"key":"67","unstructured":"[67] V. Sorianello, <i>et al.<\/i>: \u201cGraphene-silicon phase modulators with gigahertz bandwidth,\u201d Nature Photonics <b>12<\/b> (2018) 44 (DOI: 10.1038\/s41566-017-0071-6)."},{"key":"68","unstructured":"[68] C. Kieninger, <i>et al.<\/i>: \u201cUltra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,\u201d Optica <b>5<\/b> (2018) 739 (DOI: 10.1364\/OPTICA.5.000739)."},{"key":"69","unstructured":"[69] M. Takenaka, <i>et al.<\/i>: \u201cIII-V\/Si hybrid MOS optical phase shifter for Si photonic integrated circuits,\u201d J. Lightw. Technol. <b>37<\/b> (2019) 1474 (DOI: 10.1109\/JLT.2019.2892752)."},{"key":"70","unstructured":"[70] Q. Li, <i>et al.<\/i>: \u201cOptical phase modulators based on reverse-biased III-V\/Si hybrid metal-oxide-semiconductor capacitors,\u201d Photon. Technol. Lett. <b>32<\/b> (2020) 345 (DOI: 10.1109\/LPT.2020.2973174)."},{"key":"71","unstructured":"[71] Y. Ikuma, <i>et al.<\/i>: \u201cProposal of a small self-holding 2<i>\u00d7<\/i>2 optical switch using phase-change material,\u201d IEICE Electron. Express <b>5<\/b> (2008) 442 (DOI: 10.1587\/elex.5.442)."},{"key":"72","unstructured":"[72] Y. Ikuma, <i>et al.<\/i>: \u201cSmall-sized optical gate switch using Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> phase-change material integrated with a silicon waveguide,\u201d Electron. Lett. <b>46<\/b> (2010) 368 (DOI: 10.1049\/el.2010.3588)."},{"key":"73","unstructured":"[73] D. Tanaka, <i>et al.<\/i>: \u201cUltra-small, self-holding, optical gate switch using Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> with a multi-mode Si waveguide,\u201d Opt. Express <b>20<\/b> (2012) 10283 (DOI: 10.1364\/OE.20.010283)."},{"key":"74","unstructured":"[74] T. Moriyama, <i>et al.<\/i>: \u201cUltra-compact, self-holding asymmetric Mach-Zehnder interferometer switch using Ge<sub>2<\/sub>Sb<sub>2<\/sub>Te<sub>5<\/sub> phase-change material,\u201d IEICE Electron. Express <b>11<\/b> (2014) 20140538 (DOI: 10.1587\/elex.11.20140538)."},{"key":"75","unstructured":"[75] K. Kato, <i>et al.<\/i>: \u201cCurrent-driven phase-change optical gate switch using indium-tin-oxide heater,\u201d Appl. Phys. Exp. <b>10<\/b> (2017) 072201 (DOI: 10.7567\/APEX.10.072201)."},{"key":"76","unstructured":"[76] A.S. Hassanien and I. Sharma: \u201cBand-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge<sub>15-<i>x<\/i><\/sub>Sb<i><sub>x<\/sub><\/i>Se<sub>50<\/sub>Te<sub>35<\/sub> thin films: influences of Sb upon some optical characterizations and physical parameters,\u201d J. Alloys Compd. <b>798<\/b> (2019) 750 (DOI: 10.1016\/j.jallcom.2019.05.252)."},{"key":"77","unstructured":"[77] Y. Zhang, <i>et al.<\/i>: \u201cReshaping light: reconfigurable photonics enabled by broadband low-loss optical phase change materials,\u201d Proc. SPIE 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI (2019) 109820Q (DOI: 10.1117\/12.2513385)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/22\/17_17.20202002\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,11,28]],"date-time":"2020-11-28T03:31:09Z","timestamp":1606534269000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/17\/22\/17_17.20202002\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,25]]},"references-count":77,"journal-issue":{"issue":"22","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.17.20202002","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,11,25]]}}}