{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,12]],"date-time":"2026-03-12T18:00:14Z","timestamp":1773338414906,"version":"3.50.1"},"reference-count":32,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"21","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2021,11,10]]},"DOI":"10.1587\/elex.18.20210345","type":"journal-article","created":{"date-parts":[[2021,9,30]],"date-time":"2021-09-30T22:12:33Z","timestamp":1633039953000},"page":"20210345-20210345","source":"Crossref","is-referenced-by-count":6,"title":["A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time"],"prefix":"10.1587","volume":"18","author":[{"given":"Tiantian","family":"Liu","sequence":"first","affiliation":[{"name":"The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuhua","family":"Quan","sequence":"additional","affiliation":[{"name":"The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuetong","family":"Zhou","sequence":"additional","affiliation":[{"name":"The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yufei","family":"Tian","sequence":"additional","affiliation":[{"name":"The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xinhong","family":"Cheng","sequence":"additional","affiliation":[{"name":"The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoyi","family":"Huang","sequence":"additional","affiliation":[{"name":"The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"},{"name":"The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] J. Millan, <i>et al<\/i>.: \u201cA survey of wide bandgap power semiconductor devices,\u201d IEEE Trans. Power Electron., <b>29<\/b> (2014) 2155 (DOI: 10.1109\/tpel.2013.2268900).","DOI":"10.1109\/TPEL.2013.2268900"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] J. Biela, <i>et al<\/i>.: \u201cSiC versus Si--evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors,\u201d IEEE Trans. Ind. Electron. <b>58<\/b> (2011) 2872 (DOI: 10.1109\/tie.2010.2072896).","DOI":"10.1109\/TIE.2010.2072896"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] A.K. Morya, <i>et al<\/i>.: \u201cWide bandgap devices in AC electric drives: opportunities and challenges,\u201d IEEE Trans. Transport. Electrific. <b>5<\/b> (2019) 3 (DOI: 10.1109\/tte.2019.2892807).","DOI":"10.1109\/TTE.2019.2892807"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] K. Shenai: \u201cHigh-density power conversion and wide-bandgap semiconductor power electronics switching devices,\u201d Proc. IEEE, <b>107<\/b> (2019) 2308 (DOI: 10.1109\/jproc.2019.2948554).","DOI":"10.1109\/JPROC.2019.2948554"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] S. Fukunaga and T. Funaki: \u201cAn experimental study on estimating dynamic junction temperature of SiC MOSFET,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180251 (DOI: 10.1587\/elex.15.20180251).","DOI":"10.1587\/elex.15.20180251"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] R. Kibushi, <i>et al<\/i>.: \u201cComparison of thermal properties between Si and SiC power MOSFET using electro-thermal analysis,\u201d 2017 IEEE International Conference on Electronics Packaging (ICEP) (2017) (DOI: 10.23919\/icep.2017.7939354).","DOI":"10.23919\/ICEP.2017.7939354"},{"key":"7","unstructured":"[7] X.-K. Li, <i>et al<\/i>.: \u201cResearch on performance comparisons of SiC MOSFET, CoolMOS, and Si MOSFET based on H-bridge double-sided LCC resonant network,\u201d 2015 IEEE International Conference on Industrial Informatics - Computing Technology, Intelligent Technology, Industrial Information Integration (2015) (DOI: 10.1109\/iciicii.2015.150)."},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] M. Slawinski, <i>et al<\/i>.: \u201cSystem study of SiC MOSFET and Si IGBT power module performance using a bidirectional buck-boost converter as evaluation platform,\u201d 2016 IEEE 18th European Conference on Power Electronics and Applications (EPE\u201916 ECCE Europe) (2016) (DOI: 10.1109\/epe.2016.7695334).","DOI":"10.1109\/EPE.2016.7695334"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] H. Yu, <i>et al<\/i>.: \u201cComparative study of temperature sensitive electrical parameters for junction temperature monitoring in SiC MOSFET and Si IGBT,\u201d 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia) (2020) (DOI: 10.1109\/pemc-ecceasia48364.2020.9367830).","DOI":"10.1109\/IPEMC-ECCEAsia48364.2020.9367830"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] S. Yin, <i>et al<\/i>.: \u201cComparative investigation of surge current capabilities of Si IGBT and SiC MOSFET for pulsed power application,\u201d IEEE Trans. Plasma Sci. <b>46<\/b> (2018) 2979 (DOI: 10.1109\/tps.2018.2849778).","DOI":"10.1109\/TPS.2018.2849778"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] T. Funaki, <i>et al<\/i>.: \u201cCharacterization of SiC power module for high switching frequency operation,\u201d IEICE Electron. Express <b>7<\/b> (2010) 1008 (DOI: 10.1587\/elex.7.1008).","DOI":"10.1587\/elex.7.1008"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] T. Funaki, <i>et al<\/i>.: \u201cComparative study of the static and switching characteristics of SiC and Si MOSFET,\u201d IEICE Electron. Express <b>8<\/b>(2011) 1215 (DOI: 10.1587\/elex.8.1215).","DOI":"10.1587\/elex.8.1215"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] L. Cao, <i>et al<\/i>.: \u201cComparative evaluation of the short circuit capability of SiC planar and trench power MOSFET,\u201d 2018 IEEE 2nd International Electrical and Energy Conference (CIEEC) (2018) (DOI: 10.1109\/cieec.2018.8745774).","DOI":"10.1109\/CIEEC.2018.8745774"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] D. Xing, <i>et al<\/i>.: \u201cCurrent saturation characteristics and single-pulse short-circuit tests of commercial SiC MOSFET,\u201d 2019 IEEE Energy Conversion Congress and Exposition (ECCE) (2019) (DOI: 10.1109\/ecce.2019.8913178).","DOI":"10.1109\/ECCE.2019.8913178"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] Y. Zhou, <i>et al<\/i>.: \u201cFailure models and comparison on short-circuit performances for SiC JFET and SiC MOSFET,\u201d 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) (2018) (DOI: 10.1109\/wipdaasia.2018.8734661).","DOI":"10.1109\/WiPDAAsia.2018.8734661"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] C. Ionita, <i>et al<\/i>.: \u201cComparative assessment of 3.3kV\/400A SiC MOSFET and Si IGBT power modules,\u201d 2017 IEEE Energy Conversion Congress and Exposition (ECCE) (2017) (DOI: 10.1109\/ecce.2017.8095946).","DOI":"10.1109\/ECCE.2017.8095946"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] J. Sun, <i>et al<\/i>.: \u201cComparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT,\u201d 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) (2016) (DOI: 10.1109\/ifws.2016.7803752).","DOI":"10.1109\/IFWS.2016.7803752"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] S. Mocevic, <i>et al<\/i>.: \u201cComparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: desaturation versus Rogowski switch-current sensor,\u201d IEEE Trans. Ind. Appl. <b>56<\/b> (2020) 2880 (DOI: 10.1109\/TIA.2020.2972816).","DOI":"10.1109\/TIA.2020.2972816"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] S. Ji, <i>et al<\/i>.: \u201cShort-circuit characterization and protection of 10-kV SiC MOSFET,\u201d IEEE Trans. Power Electron. <b>34<\/b> (2019) 1755 (DOI: 10.1109\/tpel.2018.2834463).","DOI":"10.1109\/TPEL.2018.2834463"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] Y. Gui, <i>et al<\/i>.: \u201cDesaturation detection for paralleled GaN E-HEMT phase leg,\u201d 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (2018) (DOI: 10.1109\/ecce.2018.8558252).","DOI":"10.1109\/ECCE.2018.8558252"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] Z. Hongyue, <i>et al<\/i>.: \u201cA self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection,\u201d IEICE Electron. Express, <b>17<\/b> (2020) 20200019 (DOI: 10.1587\/elex.17.20200019).","DOI":"10.1587\/elex.17.20200019"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] B. Wittig, <i>et al<\/i>.: \u201cAnalysis and design aspects of a desaturation detection circuit for low voltage power MOSFET,\u201d Proc. 14th IEEE International Power Electronics and Motion Control Conference EPE-PEMC 2010 (2010) (DOI: 10.1109\/epepemc.2010.5606838).","DOI":"10.1109\/EPEPEMC.2010.5606838"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] S. Yin, <i>et al<\/i>.: \u201cComparative design of gate drivers with short-circuit protection scheme for SiC MOSFET and Si IGBT,\u201d Energies <b>12<\/b> (2019) 4546 (DOI: 10.3390\/en12234546).","DOI":"10.3390\/en12234546"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] L. Yue, <i>et al<\/i>.: \u201cOver-current protection for series-connected IGBTs based on desaturation detection,\u201d 2020 IEEE Energy Conversion Congress and Exposition (ECCE) (2020) (DOI: 10.1109\/ecce44975.2020.9235674).","DOI":"10.1109\/ECCE44975.2020.9235674"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] X. Zhang, <i>et al<\/i>.: \u201cA self-adaptive blanking circuit for IGBT short-circuit protection based on Vce measurement,\u201d 2015 IEEE Energy Conversion Congress and Exposition (ECCE) (2015) (DOI: 10.1109\/ecce.2015.7310242).","DOI":"10.1109\/ECCE.2015.7310242"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] J. Kim and Y. Cho: \u201cOvercurrent and short-circuit protection method using desaturation detection of SiC MOSFET,\u201d 2020 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW) (2020) (DOI: 10.1109\/wow47795.2020.9291267).","DOI":"10.1109\/WoW47795.2020.9291267"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] X. Huang, <i>et al<\/i>.: \u201cA robust 10kV SiC MOSFET gate driver with fast overcurrent protection demonstrated in a MMC submodule,\u201d 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (2020) (DOI: 10.1109\/apec39645.2020.9124533).","DOI":"10.1109\/APEC39645.2020.9124533"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] Y. Shi, <i>et al<\/i>.: \u201cSwitching characterization and short-circuit protection of 1200V SiC MOSFET T-type module in PV inverter application,\u201d IEEE Trans. Ind. Electron. <b>64<\/b> (2017) 9135 (DOI: 10.1109\/tie.2017.2682800).","DOI":"10.1109\/TIE.2017.2682800"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] T. Bertelshofer, <i>et al<\/i>.: \u201cA temperature compensated overcurrent and short-circuit detection method for SiC MOSFET modules,\u201d 2017 19th IEEE European Conference on Power Electronics and Applications (EPE\u201917 ECCE Europe) (2017) (DOI: 10.23919\/epe17ecceeurope.2017.8099216).","DOI":"10.23919\/EPE17ECCEEurope.2017.8099216"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] B.J. Baliga: <i>Fundamentals of Power Semiconductor Devices<\/i>Springer International Publishing (2019).","DOI":"10.1007\/978-3-319-93988-9"},{"key":"31","unstructured":"[31] Cree, Inc.: C2M0040120D, Datasheet Rev. B (2015).Cree, Inc.: C2M0040120D, Datasheet Rev. B (2015). (https:\/\/assets.wolfspeed.com\/uploads\/2020\/12\/C2M0040120D.pdf)"},{"key":"32","unstructured":"[32] Cree, Inc.: E3M0280090D, Datasheet (2018). (https:\/\/assets.wolfspeed.com\/uploads\/2020\/12\/E3M0280090D.pdf)"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/18\/21\/18_18.20210345\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,8]],"date-time":"2024-05-08T04:29:26Z","timestamp":1715142566000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/18\/21\/18_18.20210345\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,11,10]]},"references-count":32,"journal-issue":{"issue":"21","published-print":{"date-parts":[[2021]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.18.20210345","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,11,10]]},"article-number":"18.20210345"}}