{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,7,31]],"date-time":"2023-07-31T07:51:31Z","timestamp":1690789891006},"reference-count":31,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"1","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2022,1,10]]},"DOI":"10.1587\/elex.18.20210457","type":"journal-article","created":{"date-parts":[[2021,12,6]],"date-time":"2021-12-06T22:09:23Z","timestamp":1638828563000},"page":"20210457-20210457","source":"Crossref","is-referenced-by-count":2,"title":["A high-linearity 24-32-GHz amplifier with AM-AM\/PM compensation technology for 5G applications"],"prefix":"10.1587","volume":"19","author":[{"given":"Chunying","family":"Sun","sequence":"first","affiliation":[{"name":"School of Microelectronics, Tianjin University"}]},{"given":"Zonglin","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Physics, University of Electronic Science and Technology of China"}]},{"given":"Kaixue","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Tianjin University"}]},{"given":"Haipeng","family":"Fu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Tianjin University"}]},{"given":"Xiangyang","family":"Duan","sequence":"additional","affiliation":[{"name":"ZTE Corporation"}]},{"given":"Jianli","family":"Liu","sequence":"additional","affiliation":[{"name":"ZTE Corporation"}]},{"given":"Yenan","family":"Bie","sequence":"additional","affiliation":[{"name":"ZTE Corporation"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] Z. Zhang, <i>et al.<\/i>: \u201cDesign of a broadband high-efficiency Doherty power amplifier for 5G communication systems,\u201d IEICE Electron. Express <b>16<\/b> (2019) 20190371 (DOI: 10.1587\/elex.16.20190371).","DOI":"10.1587\/elex.16.20190371"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] F. Wang, <i>et al.<\/i>: \u201cDesign of broadband power amplifier based on a continuous harmonic control mode,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180367 (DOI: 10.1587\/elex.15.20180367).","DOI":"10.1587\/elex.15.20180367"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] S. Chen, <i>et al.<\/i>: \u201cA bandwidth enhanced Doherty power amplififier with a compact output combiner,\u201d IEEE Microw. Compon. Lett. <b>26<\/b> (2016) 434 (DOI: 10.1109\/LMWC.2016.2558108).","DOI":"10.1109\/LMWC.2016.2558108"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] Z. Cheng, <i>et al.<\/i>: \u201cA Doherty power amplifier with extended efficiency and bandwidth,\u201d IEICE Electron. Express <b>14<\/b> (2017) 0170188 (DOI: 10.1587\/elex.14.20170188).","DOI":"10.1587\/elex.14.20170188"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] S.R. Boroujeni, <i>et al.<\/i>: \u201cA broadband high-efficiency continuous class-AB power amplifier for millimeter-wave 5G and SATCOM phased-array transmitters,\u201d IEEE Trans. Microw. Theory Techn. <b>68<\/b> (2020) 3159 (DOI: 10.1109\/TMTT.2020.2983703).","DOI":"10.1109\/TMTT.2020.2983703"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] D.P. Nguyen, <i>et al.<\/i>: \u201cA 28-GHz symmetrical Doherty power amplifier using stacked-FET cells,\u201d IEEE Trans. Microw. Theory Techn. <b>66<\/b> (2018) 2628 (DOI: 10.1109\/TMTT.2018.2816024).","DOI":"10.1109\/TMTT.2018.2816024"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] S.N. Ali, <i>et al.<\/i>: \u201cTransformer-based predistortion linearizer for high linearity and high modulation efficiency in mm-wave 5G CMOS power amplifiers,\u201d IEEE Trans. Microw. Theory Techn. <b>67<\/b> (2019) 3074 (DOI: 10.1109\/TMTT.2019.2914900).","DOI":"10.1109\/TMTT.2019.2914900"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] S. Shakib, <i>et al.<\/i>: \u201cA highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS,\u201d IEEE J. Solid-State Circuits <b>51<\/b> (2016) 3020 (DOI: 10.1109\/JSSC.2016.2606584).","DOI":"10.1109\/JSSC.2016.2606584"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] H.G. Wu, <i>et al.<\/i>: \u201cFully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications,\u201d IEICE Electron. Express <b>14<\/b> (2017) 20171100 (DOI: 10.1587\/elex.14.20171100).","DOI":"10.1587\/elex.14.20171100"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] S. Li, <i>et al.<\/i>: \u201cMillimeter-wave continuous-mode power amplifier for 5G MIMO applications,\u201d IEEE Trans. Microw. Theory Techn. <b>67<\/b> (2019) 3088 (DOI: 10.1109\/TMTT.2019.2906592).","DOI":"10.1109\/TMTT.2019.2906592"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] M. Vigilante and P. Reynaert: \u201cA wideband class-AB power amplifier with 29-57-GHz AM-PM compensation in 0.9-V 28-nm bulk CMOS,\u201d IEEE J. Solid-State Circuits <b>53<\/b> (2018) 1288 (DOI: 10.1109\/JSSC.2017.2778275).","DOI":"10.1109\/JSSC.2017.2778275"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] P.M. Asbeck, <i>et al.<\/i>: \u201cPower amplifiers for mm-wave 5G applications: technology comparisons and CMOS-SOI demonstration circuits,\u201d IEEE Trans. Microw. Theory Techn. <b>67<\/b> (2019) 3099 (DOI: 10.1109\/TMTT.2019.2896047).","DOI":"10.1109\/TMTT.2019.2896047"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] S. Oshima, <i>et al.<\/i>: \u201cThird-harmonic envelope feedback method for high-efficiency linear power amplifiers,\u201d IEICE Trans. Electron. <b>E95-C<\/b> (2012) 713 (DOI: 10.1587\/transele.E95.C.713).","DOI":"10.1587\/transele.E95.C.713"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] C. Wang, <i>et al.<\/i>: \u201cA capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers,\u201d IEEE J. Solid-State Circuits <b>39<\/b> (2004) 1927 (DOI: 10.1109\/JSSC.2004.835834).","DOI":"10.1109\/JSSC.2004.835834"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] W. Ye, <i>et al.<\/i>: \u201c2.5A 2-to-6GHz class-AB power amplifier with 28.4% PAE in 65nm CMOS supporting 256QAM,\u201d IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers (2015) 1 (DOI: 10.1109\/ISSCC.2015.7062914).","DOI":"10.1109\/ISSCC.2015.7062914"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] B. Park, <i>et al.<\/i>: \u201cHighly linear mm-wave CMOS power amplifier,\u201d IEEE Trans. Microw. Theory Techn. <b>64<\/b> (2016) 4535 (DOI: 10.1109\/TMTT.2016.2623706).","DOI":"10.1109\/TMTT.2016.2623706"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] B. Fran\u00e7ois and P. Reynaert: \u201cHighly linear fully integrated wideband RF PA for LTE-advanced in 180-nm SOI,\u201d IEEE Trans. Microw. Theory Techn. <b>63<\/b> (2015) 649 (DOI: 10.1109\/TMTT.2014.2380319).","DOI":"10.1109\/TMTT.2014.2380319"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] S. Golara, <i>et al.<\/i>: \u201cProcesses of AM-PM distortion in large-signal single-FET amplifiers,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>64<\/b> (2017) 245 (DOI: 10.1109\/TCSI.2016.2604000).","DOI":"10.1109\/TCSI.2016.2604000"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] M.M. Tarar and R. Negra: \u201cDesign and implementation of wideband stacked distributed power amplifier in 0.13-um CMOS using uniform distributed topology,\u201d IEEE Trans. Microw. Theory Techn. <b>65<\/b> (2017) 5212 (DOI: 10.1109\/TMTT.2017.2769053).","DOI":"10.1109\/TMTT.2017.2769053"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] K. Kim and C. Nguyen: \u201cA concurrent Ku\/K\/Ka tri-band distributed power amplifier with negative-resistance active notch using SiGe BiCMOS process,\u201d IEEE Trans. Microw. Theory Techn. <b>62<\/b> (2014) 125 (DOI: 10.1109\/TMTT.2013.2292673).","DOI":"10.1109\/TMTT.2013.2292673"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] H. Park, <i>et al.<\/i>: \u201cA 6-18-GHz GaN reactively matched distributed power amplifier using simplified bias network and reduced thermal coupling,\u201d IEEE Trans. Microw. Theory Techn. <b>66<\/b> (2018) 2638 (DOI: 10.1109\/TMTT.2018.2817521).","DOI":"10.1109\/TMTT.2018.2817521"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] K.H. An, <i>et al.<\/i>: \u201cPower-combining transformer techniques for fully-integrated CMOS power amplifiers,\u201d IEEE J. Solid-State Circuits <b>43<\/b> (2008) 1064 (DOI: 10.1109\/JSSC.2008.920349).","DOI":"10.1109\/JSSC.2008.920349"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] Y. Zhao and J.R. Long: \u201cA wideband, dual-path, millimeter-wave power amplifier with 20dBm output power and PAE above 15% in 130nm SiGe-BiCMOS,\u201d IEEE J. Solid-State Circuits <b>47<\/b> (2012) 1981 (DOI: 10.1109\/JSSC.2012.2201275).","DOI":"10.1109\/JSSC.2012.2201275"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] D. Zhao and P. Reynaert: \u201cA 60-GHz dual-mode class AB power amplifier in 40-nm CMOS,\u201d IEEE J. Solid-State Circuits <b>48<\/b> (2013) 2323 (DOI: 10.1109\/JSSC.2013.2275662).","DOI":"10.1109\/JSSC.2013.2275662"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] Y. Zhang and P. Reynaert: \u201cA high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS,\u201d IEEE Radio Freq. Integr. Circuits Symp. (2017) 33 (DOI: 10.1109\/RFIC.2017.7969010).","DOI":"10.1109\/RFIC.2017.7969010"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] Z. Liu, <i>et al.<\/i>: \u201cA 42-62GHz transformer-based broadband mm-wave InP PA with second-harmonic waveform engineering and enhanced linearity,\u201d IEEE Trans. Microw. Theory Techn. <b>69<\/b> (2020) 756 (DOI: 10.1109\/TMTT.2020.3037092).","DOI":"10.1109\/TMTT.2020.3037092"},{"key":"27","unstructured":"[27] R. Ludwig and G. Bogdanov: <i>RF Circuit Design Theory and Applications<\/i> (Prentice-Hall, New Jersey, 2000) 2nd ed. 244."},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] Y.-T. Chang, <i>et al.<\/i>: \u201cA 28GHz power amplifier combing linearizer, adaptive bias and Gm compensation to improve back-off and P1dB efficiency,\u201d Eur. Microw. Conf. (2021) 170 (DOI: 10.23919\/EuMC48046.2021.9338061).","DOI":"10.23919\/EuMC48046.2021.9338061"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] Z. Li, <i>et al.<\/i>: \u201cA 24-30-GHz TRX front-end with high linearity and load-variation insensitivity for mm-wave 5G in 0.13-\u00b5m SiGe BiCMOS,\u201d IEEE Trans. Microw. Theory Techn. (2021) (DOI: 10.1109\/TMTT.2021.3101232).","DOI":"10.1109\/TMTT.2021.3101232"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] B. Sadhu, <i>et al.<\/i>: \u201cA 28-GHz 32-element TRX phased-array IC with concurrent dual-polarized operation and orthogonal phase and gain control for 5G communications,\u201d IEEE J. Solid-State Circuits <b>52<\/b> (2017) 3373 (DOI: 10.1109\/JSSC.2017.2766211).","DOI":"10.1109\/JSSC.2017.2766211"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] S. Hu, <i>et al.<\/i>: \u201cA 28-\/37-\/39-GHz linear doherty power amplifier in silicon for 5G applications,\u201d IEEE J. Solid-State Circuits <b>54<\/b> (2019) 1586 (DOI: 10.1109\/JSSC.2019.2902307).","DOI":"10.1109\/JSSC.2019.2902307"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/1\/19_18.20210457\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,15]],"date-time":"2022-01-15T03:45:23Z","timestamp":1642218323000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/1\/19_18.20210457\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,1,10]]},"references-count":31,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2022]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.18.20210457","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,1,10]]},"article-number":"18.20210457"}}