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Leung, <i>et al.<\/i>: \u201cHigh voltage, high speed lateral IGBT in thin SOI for power IC,\u201d IEEE International SOI Conference Proceedings (1996) 132 (DOI: 10.1109\/SOI.1996.552529).","DOI":"10.1109\/SOI.1996.552529"},{"key":"6","unstructured":"[6] W.G. Homeyer, <i>et al.<\/i>: \u201cAdvanced power converters for more electric aircraft applications,\u201d IEEE Energy Conversion Conference (1997) 591 (DOI: 10.1109\/IECEC.1997.659256)."},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] T. Trajkovic, <i>et al.<\/i>: \u201cFlip-chip assembly and 3D stacking of 1000V lateral IGBT (LIGBT) dies,\u201d Proc. ISPSD (2016) 139 (DOI: 10.1109\/ISPSD.2016.7520797).","DOI":"10.1109\/ISPSD.2016.7520797"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] J.-P. Colinge: <i>Silicon-on-Insulator Technology: Materials to VLSI<\/i> (Kluwer Academic Publishers, Netherlands, 1997) 2nd ed. 38.","DOI":"10.1007\/978-1-4757-2611-4"},{"key":"9","unstructured":"[9] D.R. Disney, <i>et al.<\/i>: \u201cA trench-gate LIGBT structure and two LMCT structures in SOI substrates,\u201d Proc. ISPSD (1994) 405 (DOI: 10.1109\/ISPSD.1994.583808)."},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] M. Sambi, <i>et al.<\/i>: \u201c190V N-channel lateral IGBT integration in SOI 0.35um BCD technology,\u201d Proc. IEDM (2008) 1 (DOI: 10.1109\/IEDM.2008.4796633).","DOI":"10.1109\/IEDM.2008.4796633"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] B. Zhang, <i>et al.<\/i>: \u201cA novel no miller plateau SOI-LIGBT with low saturation current and improved switching performance,\u201d Trans. Electron Devices <b>67<\/b> (2020) 2066 (DOI: 10.1109\/TED.2020.2982656).","DOI":"10.1109\/TED.2020.2982656"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] L. Zhang, <i>et al.<\/i>: \u201cA U-shaped channel SOI_LIGBT with dual trenches,\u201d IEEE Trans. Electron Devices <b>64<\/b> (2017) 2587 (DOI: 10.1109\/TED.2017.2696258).","DOI":"10.1109\/TED.2017.2696258"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] T.P. Chow, <i>et al.<\/i>: \u201cThe effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors,\u201d IEEE Electron Device Lett. <b>9<\/b> (1988) 450 (DOI: 10.1109\/55.6942).","DOI":"10.1109\/55.6942"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] M.R. Simpson, <i>et al.<\/i>: \u201cAnalysis of negative differential resistance in the <i>I-V<\/i> characteristics of shorted-anode LIGBT\u2019s,\u201d IEEE Trans. Electron Devices <b>38<\/b> (1991) 1633 (DOI: 10.1109\/16.85160).","DOI":"10.1109\/16.85160"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] A. Kastalsky, <i>et al.<\/i>: \u201cA field-effect transistor with a negative differential resistance,\u201d IEEE Electron Device Lett. <b>5<\/b> (1984) 57 (DOI: 10.1109\/EDL.1984.25831).","DOI":"10.1109\/EDL.1984.25831"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] D.S. Byeon, <i>et al.<\/i>: \u201cThe separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime,\u201d Microelectronics Journal <b>30<\/b> (1999) 571 (DOI: 10.1016\/S0026-2692(98)00180-3).","DOI":"10.1016\/S0026-2692(98)00180-3"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] H. Hu, <i>et al.<\/i>: \u201cA novel low turn-off loss and snapback-free reverse-conducting SOI-LIGBT with integrated polysilicon diodes,\u201d IEEE Trans. Electron Devices <b>66<\/b> (2019) 4296 (DOI: 10.1109\/TED.2019.52898232).","DOI":"10.1109\/TED.2019.2936515"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] J. Wu, <i>et al.<\/i>: \u201cAn ultralow turn-off loss SOI-LIGBT with a high-voltage <i>p<\/i>-<i>i<\/i>-<i>n<\/i> diode integrated on field oxide,\u201d IEEE Trans. Electron Devices <b>66<\/b> (2019) 1831 (DOI: 10.1109\/TED.2019.52898232).","DOI":"10.1109\/TED.2019.2898232"},{"key":"19","unstructured":"[19] J.-H. Chun, <i>et al.<\/i>: \u201cA fast-switching SOI SA-LIGBT without NDR region,\u201d ISPSD (2000) 149 (DOI: 10.1109\/ISPSD.2000.856793)."},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] S. Hardikar, <i>et al.<\/i>: \u201cA fast switching segmented anode NPN controlled LIGBT,\u201d IEEE Electron Device Lett. <b>24<\/b> (2003) 701 (DOI: 10.1109\/LED.2003.819270).","DOI":"10.1109\/LED.2003.819270"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] L. Sun, <i>et al.<\/i>: \u201cNovel snapback-free SOI LIGBT with shorted anode and trench barriers,\u201d IEEE Trans. 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Chen, <i>et al.<\/i>: \u201cArea-efficient fast-speed lateral IGBT with a 3-D n-region-controlled anode,\u201d IEEE Electron Device Lett. <b>31<\/b> (2010) 467 (DOI: 10.1109\/LED.2010.2043638).","DOI":"10.1109\/LED.2010.2043638"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] L. Sun, <i>et al.<\/i>: \u201cFast-switching lateral IGBT with trench\/planar gate and integrated schottky barrier diode (SBD),\u201d ISPSD (2019) 379 (DOI: 10.1109\/ISPSD.2019.8757596).","DOI":"10.1109\/ISPSD.2019.8757596"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] L. Sun, <i>et al.<\/i>: \u201cAnalysis of the fast-switching LIGBT with double gates and integrated Schottky barrier diode,\u201d IEEE Trans. Electron Devices <b>66<\/b> (2019) 2675 (DOI: 10.1109\/TED.2019.2912207).","DOI":"10.1109\/TED.2019.2912207"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] W. Chen, <i>et al.<\/i>: \u201cA snapback-free and fast-switching shorted-anode LIGBT with multiple current P-plugs,\u201d IEEE J. Electron Devices Soc. (2020) 1 (DOI: 10.1109\/JEDS.2020.3001002).","DOI":"10.1109\/JEDS.2020.3001002"},{"key":"29","unstructured":"[29] TCAD Sentaurus User Guide (Synopsys, 2013) ver. D."},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] Y. 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