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Leung, <i>et al.<\/i>: \u201cHigh voltage, high speed lateral IGBT in thin SOI for power IC,\u201d IEEE International SOI Conference Proceedings (1996) 132 (DOI: 10.1109\/SOI.1996.552529).","DOI":"10.1109\/SOI.1996.552529"},{"key":"5","unstructured":"[5] W.G. Homeyer, <i>et al.<\/i>: \u201cAdvanced power converters for more electric aircraft applications,\u201d IEEE Energy Conversion Conference (1997) 591 (DOI: 10.1109\/IECEC.1997.659256)."},{"key":"6","unstructured":"[6] T. Terashima and J. Moritani: \u201cHigh speed lateral-IGBT with a passive gatetomohide,\u201d Proc. ISPSD (2005) 91 (DOI: 10.1109\/ISPSD.2005.1487958)."},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] P.A. Gough, <i>et al.<\/i>: \u201cFast switching lateral insulated gate transistor,\u201d Proc. IEDM (1986) 218 (DOI: 10.1109\/IEDM.1986.191153).","DOI":"10.1109\/IEDM.1986.191153"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] B.J. 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Disney, <i>et al.<\/i>: \u201cA trench-gate LIGBT structure and two LMCT structures in SOI substrates,\u201d Proc. ISPSD (1994) 405 (DOI: 10.1109\/ISPSD.1994.583808)."},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] M. Sambi, <i>et al.<\/i>: \u201c190V N-channel lateral IGBT integration in SOI 0.35um BCD technology,\u201d Proc. IEDM (2008) 1 (DOI: 10.1109\/IEDM.2008.4796633).","DOI":"10.1109\/IEDM.2008.4796633"},{"key":"14","unstructured":"[14] A.W. Ludikhuize: \u201cA review of RESURF technology,\u201d Proc. ISPSD (2000) 11 (DOI: 10.1109\/ISPSD.2000.856763)."},{"key":"15","unstructured":"[15] G. Amaratunga and F. Udrea: \u201cPower devices for high voltage integrated circuits: new device and technology concepts,\u201d Proc. International Semiconductor Conference (2001) 441 (DOI: 10.1109\/SMICND.2001.967503)."},{"key":"16","unstructured":"[16] B.J. Baliga: <i>The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor<\/i> (William Andrew, 2015) 187."},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] M.R. Simpson: \u201cAnalysis of negative differential resistance in the <i>I-V<\/i> characteristics of shorted-anode LIGBT\u2019s,\u201d IEEE Trans. Electron Devices <b>38<\/b> (1991) 1633 (DOI: 10.1109\/16.85160).","DOI":"10.1109\/16.85160"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] D.S. Byeon, <i>et al.<\/i>: \u201cThe separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime,\u201d Microelectronics Journal <b>30<\/b> (1999) 571 (DOI: 10.1016\/S0026-2692(98)00180-3).","DOI":"10.1016\/S0026-2692(98)00180-3"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] E.M. Findlay and F. Udrea: \u201cReverse-conducting insulated gate bipolar transistor: a review of current technologies,\u201d IEEE Trans. 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