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Express <b>13<\/b> (2016) 0882 (DOI: 10.1587\/elex.13.20160882).","DOI":"10.1587\/elex.13.20160882"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] A. Maity and A. Patra: \u201cTradeoffs aware design procedure for an adaptively biased capacitorless low dropout regulator using nested miller compensation,\u201d IEEE Trans. Power Electron. <b>31<\/b> (2016) 369 (DOI: 10.1109\/TPEL.2015.2398868).","DOI":"10.1109\/TPEL.2015.2398868"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] M. Fujishima and P.K.T. Mok: \u201cA capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation,\u201d IEEE J. Solid-State Circuits <b>38<\/b> (2003) 1691 (DOI: 10.1109\/JSSC.2003.817256).","DOI":"10.1109\/JSSC.2003.817256"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] F. Lavalle-Aviles, <i>et al<\/i>.: \u201cA high power supply rejection and fast settling time capacitor-less LDO,\u201d IEEE Trans. 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Circuits Syst. II, Exp. Briefs <b>66<\/b> (2018) 462 (DOI: 10.1109\/TCSII.2018.2865254).","DOI":"10.1109\/TCSII.2018.2865254"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] J.-H. Jung, <i>et al<\/i>.: \u201cA fast transient response hybrid LDO with highly accurate DC voltage using countable bidirectional binary search and soft swap switching,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>67<\/b> (2020) 3272 doi[10.1109\/TCSII.2020.2992056]10.1109\/TCSII.2020.2992056.","DOI":"10.1109\/TCSII.2020.2992056"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] X. Ma, <i>et al<\/i>.: \u201cA fully integrated LDO with 50-mV dropout for power efficiency optimization,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>67<\/b> (2020) 725 (DOI: 10.1109\/TCSII.2019.2919665).","DOI":"10.1109\/TCSII.2019.2919665"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] A. Nakhlestan, <i>et al<\/i>.: \u201cLow-power area-efficient LDO with loop-gain and bandwidth enhancement using non-dominant pole movement technique for IoT applications,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>68<\/b> (2021) 692 (DOI: 10.1109\/TCSII.2020.3013646).","DOI":"10.1109\/TCSII.2020.3013646"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] W.-C. Chen, <i>et al<\/i>.: \u201cA switchable digital-analog low-dropout regulator for analog dynamic voltage scaling technique,\u201d IEEE J. Solid-State Circuits <b>49<\/b> (2014) 740 (DOI: 10.1109\/JSSC.2013.2297395).","DOI":"10.1109\/JSSC.2013.2297395"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] R.J. Milliken, <i>et al<\/i>.: \u201cFull on-chip CMOS low-dropout voltage regulator,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>54<\/b> (2007) 1879 (DOI: 10.1109\/TCSI.2007.902615).","DOI":"10.1109\/TCSI.2007.902615"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] Y. Lu, <i>et al<\/i>.: \u201cA fully-integrated low-dropout regulator with full-spectrum power supply rejection,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>62<\/b> (2015) 707 (DOI: 10.1109\/TCSI.2014.2380644).","DOI":"10.1109\/TCSI.2014.2380644"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] E.N.Y. Ho and P.K.T. Mok: \u201cA capacitor-less CMOS active feedback low-dropout regulator with slew-rate enhancement for portable on-chip application,\u201d IEEE Trans. Circuits Sys. II, Exp. Briefs <b>57<\/b> (2010) 80 (DOI: 10.1109\/TCSII.2009.2038630).","DOI":"10.1109\/TCSII.2009.2038630"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] Q.-H. Duong, <i>et al<\/i>.: \u201cMultiple-loop design technique for high-performance low-dropout regulator,\u201d IEEE J. Solid-State Circuits <b>52<\/b> (2017) 2533 (DOI: 10.1109\/JSSC.2017.2717922).","DOI":"10.1109\/JSSC.2017.2717922"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] K. Keikhosravy and S. 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