{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T16:02:13Z","timestamp":1772208133040,"version":"3.50.1"},"reference-count":31,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2022,5,25]]},"DOI":"10.1587\/elex.19.20220144","type":"journal-article","created":{"date-parts":[[2022,4,24]],"date-time":"2022-04-24T22:09:20Z","timestamp":1650838160000},"page":"20220144-20220144","source":"Crossref","is-referenced-by-count":3,"title":["A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression"],"prefix":"10.1587","volume":"19","author":[{"given":"Jian","family":"Jin","sequence":"first","affiliation":[{"name":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"}]},{"given":"Mengyuan","family":"Sun","sequence":"additional","affiliation":[{"name":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"}]},{"given":"Yannan","family":"Yang","sequence":"additional","affiliation":[{"name":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"}]},{"given":"Min","family":"Xu","sequence":"additional","affiliation":[{"name":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"}]},{"given":"David Wei","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] J. Glaser: \u201cHow GaN power transistors drive high-performance lidar: generating ultrafast pulsed power with GaN FETs,\u201d IEEE Power Electron. Mag. <b>4<\/b> (2017) 25 (DOI: 10.1109\/MPEL.2016.2643099).","DOI":"10.1109\/MPEL.2016.2643099"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] K.J. Chen, <i>et al.<\/i>: \u201cGaN-on-Si power technology: devices and applications,\u201d IEEE Trans. Electron Devices <b>64<\/b> (2017) 779 (DOI: 10.1109\/TED.2017.2657579).","DOI":"10.1109\/TED.2017.2657579"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] J. Mill\u00e1n, <i>et al<\/i>.: \u201cA survey of wide bandgap power semiconductor devices,\u201d IEEE Trans. Power Electron. <b>29<\/b> (2014) 2155 (DOI: 10.1109\/TPEL.2013.2268900).","DOI":"10.1109\/TPEL.2013.2268900"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] E.A. Jones, <i>et al.<\/i>: \u201cCharacterization of an enhancement-mode 650-V GaN HFET,\u201d 2015 IEEE Energy Conversion Congress and Exposition (ECCE) (2015) 400 (DOI: 10.1109\/ECCE.2015.7309716).","DOI":"10.1109\/ECCE.2015.7309716"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] D. Reusch and J. Strydom: \u201cEvaluation of gallium nitride transistors in high frequency resonant and soft-switching DC-DC converters,\u201d IEEE Trans. Power Electron. <b>30<\/b> (2015) 5151 (DOI: 10.1109\/TPEL.2014.2364799).","DOI":"10.1109\/TPEL.2014.2364799"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] K. Nagaoka, <i>et al.<\/i>: \u201cHigh-speed gate drive circuit for SiC MOSFET by GaN HEMT,\u201d IEICE Electron. Express <b>12<\/b> (2015) 20150285 (DOI: 10.1587\/elex.12.20150285).","DOI":"10.1587\/elex.12.20150285"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] H. Yamaguchi: \u201cRecent trend in next generation power electronics R&amp;D,\u201d IEEJ Transactions on Power and Energy <b>132<\/b> (2012) 209 (DOI: 10.1541\/ieejpes.132.209).","DOI":"10.1541\/ieejpes.132.209"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] J. Biela, <i>et al.<\/i>: \u201cSiC versus Si--evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors,\u201d IEEE Trans. Ind. Electron. <b>58<\/b> (2011) 2872 (DOI: 10.1109\/TIE.2010.2072896).","DOI":"10.1109\/TIE.2010.2072896"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] L. Zhang, <i>et al.<\/i>: \u201cA high efficiency inverter design for Google little box challenge,\u201d 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2015) 319 (DOI: 10.1109\/WiPDA.2015.7369302).","DOI":"10.1109\/WiPDA.2015.7369302"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] D. Neumayr, <i>et al.<\/i>: \u201cThe essence of the little box challenge-part A: Key design challenges &amp; solutions,\u201d CPSS Transactions on Power Electronics and Applications <b>5<\/b> (2020) 158 (DOI: 10.24295\/CPSSTPEA.2020.00014).","DOI":"10.24295\/CPSSTPEA.2020.00014"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] K.A. Kim, <i>et al.<\/i>: \u201cOpening the box: survey of high power density inverter techniques from the little box challenge,\u201d CPSS Transactions on Power Electronics and Applications <b>2<\/b> (2017) 131 (DOI: 10.24295\/CPSSTPEA.2017.00013).","DOI":"10.24295\/CPSSTPEA.2017.00013"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] G. Tang, <i>et al.<\/i>: \u201cHigh-speed, high-reliability GaN power device with integrated gate driver,\u201d 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2018) 76 (DOI: 10.1109\/ISPSD.2018.8393606).","DOI":"10.1109\/ISPSD.2018.8393606"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] S. Ujita, <i>et al.<\/i>: \u201cA fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC converters,\u201d 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) (2016) 1 (DOI: 10.1109\/VLSIC.2016.7573496).","DOI":"10.1109\/VLSIC.2016.7573496"},{"key":"14","unstructured":"[14] Efficient Power Conversion Corporation Inc.: \u201cReduce audible noise in motor drive designs using eGaN FETs and ICs\u201d (2021)."},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] A. Lidow, <i>et al<\/i>.: <i>GaN Transistors for Efficient Power Conversion<\/i> (Wiley, New York, 2014) 2nd ed. 39 (DOI: 10.1002\/9781118844779).","DOI":"10.1002\/9781118844779"},{"key":"16","unstructured":"[16] B.J. Baliga: <i>Fundamentals of Power Semiconductor Devices<\/i> (Springer Science &amp; Business Media, 2010) 27 (DOI: 10.1007\/978-3-319-93988-9)."},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] Z. Chen, <i>et al.<\/i>: \u201cExperimental parametric study of the parasitic inductance influence on mosfet switching characteristics,\u201d The 2010 International Power Electronics Conference: ECCE ASIA (2010) 164 (DOI: 10.1109\/IPEC.2010.5543851).","DOI":"10.1109\/IPEC.2010.5543851"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] H. Sato, <i>et al.<\/i>: \u201cDevelopment of SiC power module for high-speed switching operation,\u201d 2013 IEEE Electrical Design of Advanced Packaging Systems Symposium (EDAPS) (2013) 13 (DOI: 10.1109\/EDAPS.2013.6724445).","DOI":"10.1109\/EDAPS.2013.6724445"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] S. Sato, <i>et al.<\/i>: \u201cDevelopment of a high-speed switching silicon carbide power module,\u201d Materials Science Forum <b>963<\/b> (2019) 864 (DOI: 10.24295\/CPSSTPEA.2017.00013).","DOI":"10.4028\/www.scientific.net\/MSF.963.864"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] Z. Dong, <i>et al.<\/i>: \u201cA gate drive circuit with mid-level voltage for GaN transistors in a 7-MHz isolated resonant converter,\u201d 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) (2015) 731 (DOI: 10.1109\/APEC.2015.7104431).","DOI":"10.1109\/APEC.2015.7104431"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] R. Xie, <i>et al.<\/i>: \u201cAn analytical model for false turn-on evaluation of GaN transistor in bridge-leg configuration,\u201d 2016 IEEE Energy Conversion Congress and Exposition (ECCE) (2016) 1 (DOI: 10.1109\/ECCE.2016.7854840).","DOI":"10.1109\/ECCE.2016.7854840"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] T. Iwaki, <i>et al.<\/i>: \u201cAn analysis of false turn-on phenomenon of GaN HEMT with parasitic components,\u201d 2017 IEEE International Telecommunications Energy Conference (INTELEC) (2017) 731 (DOI: 10.1109\/INTLEC.2017.8214160).","DOI":"10.1109\/INTLEC.2017.8214160"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] R. Matsumoto, <i>et al.<\/i>: \u201cOptimization of the balance between the gate-drain capacitance and the common source inductance for preventing the oscillatory false triggering of fast switching GaN-FETs,\u201d 2017 IEEE Energy Conversion Congress and Exposition (ECCE) (2017) 405 (DOI: 10.1109\/ECCE.2017.8095811).","DOI":"10.1109\/ECCE.2017.8095811"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] R. Matsumoto, <i>et al.<\/i>: \u201cOptimization of the balance between the gate-drain capacitance and the common source inductance for preventing the oscillatory false triggering of fast switching GaN-FETs,\u201d 2017 IEEE Energy Conversion Congress and Exposition (ECCE) (2017) 405 (DOI: 10.1109\/ECCE.2017.8095811).","DOI":"10.1109\/ECCE.2017.8095811"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] J. Chen, <i>et al.<\/i>: \u201cAn RC snubber circuit to suppress false triggering oscillation for GaN based half-bridge circuits,\u201d 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) (2019) 670 (DOI: 10.1109\/PEDG.2019.8807646).","DOI":"10.1109\/PEDG.2019.8807646"},{"key":"26","unstructured":"[26] GaN Systems Inc.: \u201cHow to drive GaN enhancement mode power switching transistors\u201d (2014)."},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] E.A. Jones, <i>et al.<\/i>: \u201cReview of commercial GaN power devices and GaN-based converter design challenges,\u201d IEEE J. Emerg. Sel. Topics Power Electron. <b>4<\/b> (2016) 707 (DOI: 10.1109\/JESTPE.2016.2582685).","DOI":"10.1109\/JESTPE.2016.2582685"},{"key":"28","unstructured":"[28] Texas Instruments Inc.: LMG1025 Datasheet (2020)."},{"key":"29","unstructured":"[29] Texas Instruments Inc.: LMG1025-Q1 EVM User\u2019s Guide (Rev. B) (27020)."},{"key":"30","unstructured":"[30] G.R. Blackwell: <i>The Electronic Packaging Handbook<\/i> (CRC Press, 2017) 588 (DOI: 10.1201\/9781420049848)."},{"key":"31","unstructured":"[31] Efficient Power Conversion Corporation Inc.: EPC2019 Datasheet (2021)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/10\/19_19.20220144\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,28]],"date-time":"2022-05-28T04:52:26Z","timestamp":1653713546000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/10\/19_19.20220144\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,5,25]]},"references-count":31,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2022]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.19.20220144","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,5,25]]},"article-number":"19.20220144"}}