{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T02:04:25Z","timestamp":1769047465211,"version":"3.49.0"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"12","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2022,6,25]]},"DOI":"10.1587\/elex.19.20220157","type":"journal-article","created":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T22:09:30Z","timestamp":1652220570000},"page":"20220157-20220157","source":"Crossref","is-referenced-by-count":5,"title":["A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications"],"prefix":"10.1587","volume":"19","author":[{"given":"Haohan","family":"Yang","sequence":"first","affiliation":[{"name":"Smart Sensing R&amp;D Centre, Institute of Microelectronics of Chinese Academy of Science"},{"name":"Institute of Microelectronics, University of Chinese Academy of Sciences"}]},{"given":"Heng","family":"You","sequence":"additional","affiliation":[{"name":"Smart Sensing R&amp;D Centre, Institute of Microelectronics of Chinese Academy of Science"},{"name":"Institute of Microelectronics, University of Chinese Academy of Sciences"}]},{"given":"Shushan","family":"Qiao","sequence":"additional","affiliation":[{"name":"Smart Sensing R&amp;D Centre, Institute of Microelectronics of Chinese Academy of Science"},{"name":"Institute of Microelectronics, University of Chinese Academy of Sciences"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] B.P. Crow, <i>et al<\/i>.: \u201cIEEE 802.11 wireless local area networks,\u201d IEEE Commun. Mag. <b>35<\/b> (1997) 116 (DOI: 10.1109\/35.620533).","DOI":"10.1109\/35.620533"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] G.R. Hiertz, <i>et al<\/i>.: \u201cIEEE 802.11s: the WLAN mesh standard,\u201d IEEE Wireless Commun. <b>17<\/b> (2010) 104 (DOI: 10.1109\/MWC.2010.5416357).","DOI":"10.1109\/MWC.2010.5416357"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] S. Baek, <i>et al<\/i>.: \u201cA 5.5-GHz CMOS power amplifier using parallel-combined transistors with cascode adaptive biasing for WLAN applications,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180336 (DOI: 10.1587\/elex.15.20180336).","DOI":"10.1587\/elex.15.20180336"},{"key":"4","unstructured":"[4] M.S. Gast: <i>802.11ac: A Survival Guide: Wi-Fi at Gigabit and Beyond<\/i>(O\u2019Reilly Media, 2013)."},{"key":"5","unstructured":"[5] E.H. Ong, <i>et al<\/i>.: \u201cIEEE 802.11ac: enhancements for very high throughput WLANs,\u201d 2011 IEEE 22nd International Symposium on Personal, Indoor and Mobile Radio Communications (2011) (DOI: 10.1109\/PIMRC.2011.6140087)."},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] B. Liu, <i>et al<\/i>.: \u201cA highly efficient fully integrated GaN power amplifier for 5-GHz WLAN 802.11ac application,\u201d IEEE Microw. Wireless Compon. Lett. <b>28<\/b> (2018): 437 (DOI: 10.1109\/LMWC.2018.2812107).","DOI":"10.1109\/LMWC.2018.2812107"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] S. Anderson and N. Snir: \u201cAn asymmetrical parallel-combined cascode CMOS WiFi 5GHz 802.11ac RF power amplifier,\u201d 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (2018) (DOI: 10.1109\/RFIC.2018.8429025).","DOI":"10.1109\/RFIC.2018.8429025"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] B. Bellalta: \u201cIEEE 802.11ax: high-efficiency WLANs,\u201d IEEE Wireless Commun. <b>23<\/b>(2016) 38 (DOI: 10.1109\/MWC.2016.7422404).","DOI":"10.1109\/MWC.2016.7422404"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] E. Khorov, <i>et al<\/i>.: \u201cA tutorial on IEEE 802.11ax high efficiency WLANs,\u201d IEEE Commun. Surveys Tuts. <b>21<\/b> (2018) 197 (DOI: 10.1109\/COMST.2018.2871099).","DOI":"10.1109\/COMST.2018.2871099"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] Q. Qu, <i>et al<\/i>.: \u201cSurvey and performance evaluation of the upcoming next generation WLANs standard-IEEE 802.11 ax,\u201d Mobile Networks and Applications <b>24<\/b> (2019) 1461 (DOI: 10.1007\/s11036-019-01277-9).","DOI":"10.1007\/s11036-019-01277-9"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] I. Ju, <i>et al<\/i>.: \u201cHighly linear high-power 802.11 AC\/AX WLAN SiGe HBT power amplifiers with a compact 2nd-Harmonic-Shorted four-way transformer and a thermally compensating dynamic bias circuit,\u201d IEEE J. Solid-State Circuits <b>55<\/b> (2020) 2356 (DOI: 10.1109\/JSSC.2020.2993720).","DOI":"10.1109\/JSSC.2020.2993720"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] B. Liu, <i>et al<\/i>.: \u201cA fully integrated class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application,\u201d IEEE Microw. Wireless Compon. Lett. <b>28<\/b> (2018) 434 (DOI: 10.1109\/LMWC.2018.2811338).","DOI":"10.1109\/LMWC.2018.2811338"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] B. Liu, <i>et al<\/i>.: \u201cReconfigurable 2.4-\/5-GHz dual-band transmitter front-end supporting 1024-QAM for WLAN 802.11 ax application in 40-nm CMOS,\u201d IEEE Trans. Microw. Theory Techn. <b>68<\/b> (2020) 4018 (DOI: 10.1109\/TMTT.2020.2990460).","DOI":"10.1109\/TMTT.2020.2990460"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] M.S. Mugisho, <i>et al<\/i>.: \u201cGeneralized class-E power amplifier with shunt capacitance and shunt filter,\u201d IEEE Trans. Microw. Theory Techn. <b>67<\/b> (2019) 3464 (DOI: 10.1109\/TMTT.2019.2923514).","DOI":"10.1109\/TMTT.2019.2923514"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] T. Ohira: \u201cLoad impedance perturbation formulas for class-E power amplifiers,\u201d IEICE Commun. Express <b>9<\/b> (2020) 482 (DOI: 10.1587\/comex.2020XBL0085).","DOI":"10.1587\/comex.2020XBL0085"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] K.N. Surakitbovorn and J.M. Rivas-Davila: \u201cOn the optimization of a class-E power amplifier with GaN HEMTs at megahertz operation,\u201d IEEE Trans. Power Electron. <b>35<\/b> (2019) 4009 (DOI: 10.1109\/TPEL.2019.2939549).","DOI":"10.1109\/TPEL.2019.2939549"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] S. Jee, <i>et al<\/i>.: \u201cSwitching behavior of class-E power amplifier and its operation above maximum frequency,\u201d IEEE Trans. Microw. Theory Techn. <b>60<\/b> (2011) 89 (DOI: 10.1109\/TMTT.2011.2173208).","DOI":"10.1109\/TMTT.2011.2173208"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] P. Aflaki, <i>et al<\/i>.: \u201cDesign and implementation of an inverse class-F power amplifier with 79% efficiency by using a switch-based active device model,\u201d 2008 IEEE Radio and Wireless Symposium (2008) (DOI: 10.1109\/RWS.2008.4463519).","DOI":"10.1109\/RWS.2008.4463519"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] K. Chen and D. Peroulis: \u201cA 3.1-GHz class-F power amplifier with 82% power-added-efficiency,\u201d IEEE Microw. Wireless Componen. Lett. <b>23<\/b> (2013) 436 (DOI: 10.1109\/LMWC.2013.2271295).","DOI":"10.1109\/LMWC.2013.2271295"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] A. Pirasteh, <i>et al<\/i>.: \u201cA modified class-F power amplifier with miniaturized harmonic control circuit,\u201d AEU-International Journal of Electronics and Communications <b>97<\/b> (2018) 202 (DOI: 10.1016\/j.aeue.2018.10.022).","DOI":"10.1016\/j.aeue.2018.10.022"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] Z. Yang, <i>et al<\/i>.: \u201cA precise harmonic control technique for high efficiency concurrent dual-band continuous Class-F power amplifier,\u201d IEEE Access <b>6<\/b> (2018) 51864 (DOI: 10.1109\/ACCESS.2018.2870865).","DOI":"10.1109\/ACCESS.2018.2870865"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] X. Yu, <i>et al<\/i>.: \u201cC-cand 60W GaN power amplifier MMIC designed with harmonic tuned approach,\u201d Electron. Lett. <b>52<\/b> (2016) 219 (DOI: 10.1049\/el.2015.3017).","DOI":"10.1049\/el.2015.3017"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] J. Son, <i>et al<\/i>.: \u201cBroadband saturated power amplifier with harmonic control circuits,\u201d IEEE Microw. Wireless Compon. Lett. <b>24<\/b> (2013) 185 (DOI: 10.1109\/LMWC.2013.2292925).","DOI":"10.1109\/LMWC.2013.2292925"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] D.P. Nguyen, <i>et al<\/i>.: \u201cA wideband high efficiency Ka-band MMIC power amplifier for 5G wireless communications,\u201d 2019 IEEE International Symposium on Circuits and Systems (ISCAS) (2019) (DOI: 10.1109\/ISCAS.2019.8702092).","DOI":"10.1109\/ISCAS.2019.8702092"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] L. Huang, <i>et al<\/i>.: \u201cAn InGaP\/GaAs HBT power amplifier for 4.9-5.9GHz wireless-LAN applications,\u201d 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (2014) (DOI: 10.1109\/ICSICT.2014.7021517).","DOI":"10.1109\/ICSICT.2014.7021517"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] H. Kim, <i>et al<\/i>.: \u201c1.9GHz band highly linear 2-stage power amplifier MMIC based on InGaP\/GaAs HBT,\u201d 2009 Asia Pacific Microwave Conference (2009) (DOI: 10.1109\/APMC.2009.5385378).","DOI":"10.1109\/APMC.2009.5385378"},{"key":"27","unstructured":"[27] W.-C. Hua, <i>et al<\/i>.: \u201cHigh-linearity and temperature-insensitive 2.4GHz SiGe power amplifier with dynamic-bias control,\u201d 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium-Digest of Papers (2005) (DOI: 10.1109\/RFIC.2005.1489887)."},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] H. Li, <i>et al<\/i>.: \u201cA high linearity adaptive bias SiGe power amplifier for 5G communication,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>68<\/b> (2021) 2770 (DOI: 10.1109\/TCSII.2021.3065708).","DOI":"10.1109\/TCSII.2021.3065708"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] T. Oka, <i>et al<\/i>.: \u201cA high-power low-distortion GaAs HBT power amplifier for mobile terminals used in broadband wireless applications.\u201d IEEE J. Solid-State Circuits <b>42<\/b> (2007) 2123 (DOI: 10.1109\/JSSC.2007.904154).","DOI":"10.1109\/JSSC.2007.904154"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] I. Ju, <i>et al<\/i>.: \u201cHighly linear high-power 802.11ac\/ax WLAN SiGe HBT power amplifiers with a compact 2nd-Harmonic-Shorted four-way transformer and a thermally compensating dynamic bias circuit,\u201d IEEE J. Solid-State Circuits <b>55<\/b> (2020) 2356 (DOI: 10.1109\/JSSC.2020.2993720).","DOI":"10.1109\/JSSC.2020.2993720"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/12\/19_19.20220157\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,9]],"date-time":"2024-05-09T05:04:37Z","timestamp":1715231077000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/12\/19_19.20220157\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,25]]},"references-count":30,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2022]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.19.20220157","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,6,25]]},"article-number":"19.20220157"}}