{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,10]],"date-time":"2025-05-10T04:15:57Z","timestamp":1746850557519},"reference-count":32,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"15","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2022,8,10]]},"DOI":"10.1587\/elex.19.20220221","type":"journal-article","created":{"date-parts":[[2022,6,28]],"date-time":"2022-06-28T22:10:11Z","timestamp":1656454211000},"page":"20220221-20220221","source":"Crossref","is-referenced-by-count":5,"title":["Design of capless LDO regulator with low voltage application based ESD protection circuit using SR-latch switch structure"],"prefix":"10.1587","volume":"19","author":[{"given":"Kwon Sang","family":"Wook","sequence":"first","affiliation":[{"name":"Department of Electronics and Electrical Engineering, Dankook University"}]},{"given":"Yong Seo","family":"Koo","sequence":"additional","affiliation":[{"name":"Department of Electronics and Electrical Engineering, Dankook University"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] X. Qu, <i>et al<\/i>.: \u201cA low-power on-chip LDO with advanced reference buffer,\u201d IEICE Electron. Express <b>11<\/b> (2014) 20140824 (DOI: 10.1587\/elex.11.20140824).","DOI":"10.1587\/elex.11.20140824"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] H. Li, <i>et al<\/i>.: \u201cA fully on-chip digitally assisted LDO regulator with improved regulation and transient responses,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>65<\/b> (2018) 4027 (DOI: 10.1109\/TCSI.2018.2851514).","DOI":"10.1109\/TCSI.2018.2851514"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] Y.-S. Koo: \u201cA design of low-area low drop-out regulator using body bias technique,\u201d IEICE Electron. Express <b>10<\/b> (2013) 20130300 (DOI: 10.1587\/elex.10.20130300).","DOI":"10.1587\/elex.10.20130300"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] J. Yin, <i>et al<\/i>.: \u201cAn 800mA load current LDO with wide input voltage range,\u201d ICCDS (2017) 174 (DOI: 10.1109\/ICCDS.2017.8120473).","DOI":"10.1109\/ICCDS.2017.8120473"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] A. Maity and A. Patra: \u201cTradeoffs aware design procedure for an adaptively biased capacitorless low dropout regulator using nested miller compensation,\u201d IEEE Trans. Power Electron. <b>31<\/b> (2016) 369 (DOI: 10.1109\/TPEL.2015.2398868).","DOI":"10.1109\/TPEL.2015.2398868"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] G. Li, <i>et al<\/i>.: \u201cDual active-feedback frequency compensation for output-capacitorless LDO with transient and stability enhancement in 65-nm CMOS,\u201d IEEE Trans. Power Electron. <b>35<\/b> (2020) 415 (DOI: 10.1109\/TPEL.2019.2910557).","DOI":"10.1109\/TPEL.2019.2910557"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] F. Lavalle-Aviles, <i>et al<\/i>.: \u201cA high power supply rejection and fast settling time capacitor-less LDO,\u201d IEEE Trans. Power Electron. <b>34<\/b> (2019) 474 (DOI: 10.1109\/TPEL.2018.2826922).","DOI":"10.1109\/TPEL.2018.2826922"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] S.S. Chong, <i>et al<\/i>.: \u201cA sub-1V transient-enhanced output-capacitorless LDO regulator with push-pull composite power transistor,\u201d IEEE Trans. Very Large Scale Integr. (VLSI) Syst. <b>22<\/b> (2014) 229 (DOI: 10.1109\/TVLSI.2013.2290702).","DOI":"10.1109\/TVLSI.2013.2290702"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] M. Al-Shyoukh, <i>et al<\/i>.: \u201cA transient-enhanced low-quiescent current low-dropout regulator with buffer impedance attenuation,\u201d IEEE J. Solid-State Circuits <b>42<\/b> (2007) 1732 (DOI: 10.1109\/JSSC.2007.900281).","DOI":"10.1109\/JSSC.2007.900281"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] G.A. Rincon-Mora: \u201cActive capacitor multiplier in Miller-compensated circuits,\u201d IEEE J. Solid-State Circuits <b>35<\/b> (2000) 26 (DOI: 10.1109\/4.818917).","DOI":"10.1109\/4.818917"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] J.-H. Jung, <i>et al<\/i>.: \u201cA fast transient response hybrid LDO with highly accurate DC voltage using countable bidirectional binary search and soft swap switching,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>67<\/b> (2020) 3272 (DOI: 10.1109\/TCSII.2020.2992056).","DOI":"10.1109\/TCSII.2020.2992056"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] W. Han, <i>et al<\/i>.: \u201cA 340-nA-quiescent 80-mA-load 0.02-fs-FOM active-capacitor-based low-dropout regulator in standard 0.18-\u00b5m CMOS,\u201d IEEE Solid-State Circuits Lett.<b>4<\/b> (2021) 125 (DOI: 10.1109\/LSSC.2021.3089975).","DOI":"10.1109\/LSSC.2021.3089975"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] A. Nakhlestan, <i>et al<\/i>.: \u201cLow-power area-efficient LDO with loop-gain and bandwidth enhancement using non-dominant pole movement technique for IoT applications,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>68<\/b> (2021) 692 (DOI: 10.1109\/TCSII.2020.3013646).","DOI":"10.1109\/TCSII.2020.3013646"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] C. R\u0103ducan, <i>et al<\/i>.: \u201cLDO with improved common gate class-AB OTA handles any load capacitors and provides fast response to load transients,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>67<\/b> (2020) 3740 (DOI: 10.1109\/TCSI.2020.3012376).","DOI":"10.1109\/TCSI.2020.3012376"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] J. Guo, <i>et al<\/i>.: \u201cA 6-\u00b5W chip-area-efficient output-capacitorless LDO in 90-nm CMOS technology,\u201d IEEE J. Solid-State Circuits <b>45<\/b> (2010) 1896 (DOI: 10.1109\/JSSC.2010.2053859).","DOI":"10.1109\/JSSC.2010.2053859"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] K.-I. Do, <i>et al<\/i>.: \u201c4H-SiC-based ESD protection design with optimization of segmented LIGBT for high-voltage applications,\u201d IEEE J. Electron Devices Soc. <b>9<\/b> (2021) 1017 (DOI: 10.1109\/JEDS.2021.3121212).","DOI":"10.1109\/JEDS.2021.3121212"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] K.-I. Do, <i>et al<\/i>.: \u201cA 4H-SiC MOSFET-based ESD protection with improved snapback characteristics for high-voltage applications,\u201d IEEE Trans. Power Electron. <b>36<\/b> (2021) 4921 (DOI: 10.1109\/TPEL.2020.3032917).","DOI":"10.1109\/TPEL.2020.3032917"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] K.-I. Do, <i>et al<\/i>.: \u201cA novel dual-directional SCR structure with high holding voltage for 12-V applications in 0.13-\u00b5m BCD process,\u201d IEEE Trans. Electron Devices <b>67<\/b> (2020) 5020 (DOI: 10.1109\/TED.2020.3023064).","DOI":"10.1109\/TED.2020.3023064"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] K.-I. Do, <i>et al<\/i>.: \u201cDesign of 4H-SiC-based silicon-controlled rectifier with high holding voltage using segment topology for high-voltage ESD protection,\u201d IEEE Electron Device Lett. <b>41<\/b> (2020) 1669 (DOI: 10.1109\/LED.2020.3022888).","DOI":"10.1109\/LED.2020.3022888"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] K.-I. Do, <i>et al<\/i>.: \u201cA gate-grounded NMOS-based dual-directional ESD protection with high holding voltage for 12V application,\u201d IEEE Trans. Device Mater. Rel. <b>20<\/b> (2020) 716 (DOI: 10.1109\/TDMR.2020.3022897).","DOI":"10.1109\/TDMR.2020.3022897"},{"key":"21","unstructured":"[21] K.-I. Do, <i>et al<\/i>.: \u201cA novel low dynamic resistance dual-directional SCR with high holding voltage for 12V applications,\u201d IEEE J. Electron Devices Soc. <b>8<\/b> (2020) 635 (DOI: 10.1109\/JEDS.2020.2999108)."},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] J. Tang, <i>et al<\/i>.: \u201cLow-power fast-transient capacitor-less LDO regulator with high slew-rate class-AB amplifier,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>66<\/b> (2018) 462 (DOI: 10.1109\/TCSII.2018.2865254).","DOI":"10.1109\/TCSII.2018.2865254"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] E.N.Y. Ho, <i>et al<\/i>.: \u201cA capacitor-less CMOS active feedback low-dropout regulator with slew-rate enhancement for portable on-chip application,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>57<\/b> (2010) 80 (DOI: 10.1109\/TCSII.2009.2038630).","DOI":"10.1109\/TCSII.2009.2038630"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] H. Kim, <i>et al<\/i>.: \u201cModeling and measurement of ground bounce induced by high-speed output buffer with on-chip low-dropout (LDO) regulator,\u201d IEEE Trans. Electromagn. Compat. <b>60<\/b> (2017) 1022 (DOI: 10.1109\/TEMC.2017.2759123).","DOI":"10.1109\/TEMC.2017.2759123"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] G. Li, <i>et al<\/i>.: \u201cDual active-feedback frequency compensation for output-capacitorless LDO with transient and stability enhancement in 65-nm CMOS,\u201d IEEE Trans. Power Electron. <b>35<\/b> (2019) 415 (DOI: 10.1109\/TPEL.2019.2910557).","DOI":"10.1109\/TPEL.2019.2910557"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] S.-W. Hong, <i>et al<\/i>.: \u201cHigh-gain wide-bandwidth capacitor-less low-dropout regulator (LDO) for mobile applications utilizing frequency response of multiple feedback loops,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>63<\/b> (2016) 46 (DOI: 10.1109\/TCSI.2015.2512702).","DOI":"10.1109\/TCSI.2015.2512702"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] K.-I. Do, <i>et al<\/i>.: \u201cA new SCR structure with high holding voltage and low on-resistance for 5-V applications,\u201d IEEE Trans. Electron Devices <b>67<\/b> (2020) 1052 (DOI: 10.1109\/TED.2020.2963994).","DOI":"10.1109\/TED.2020.2963994"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] K.-I. Do, <i>et al<\/i>.: \u201cA new dual-direction SCR with high holding voltage and low dynamic resistance for 5V application,\u201d IEEE J. Electron Devices Soc. <b>7<\/b> (2019) 601 (DOI: 10.1109\/JEDS.2019.2916399).","DOI":"10.1109\/JEDS.2019.2916399"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] K.-I. Do, <i>et al<\/i>.: \u201cStudy on 4H-SiC GGNMOS based ESD protection circuit with low trigger voltage using gate-body floating technique for 70-V applications,\u201d IEEE Electron Device Lett. <b>40<\/b> (2019) 283 (DOI: 10.1109\/LED.2018.2885846).","DOI":"10.1109\/LED.2018.2885846"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] B.-B. Song, <i>et al<\/i>.: \u201cSCR-based ESD protection using a penta-well for 5V applications,\u201d IEEE J. Electron Devices Soc. <b>6<\/b> (2018) 691 (DOI: 10.1109\/JEDS.2018.2817636).","DOI":"10.1109\/JEDS.2018.2817636"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] K.-I. Do, <i>et al<\/i>.: \u201cA novel dual-directional SCR structure with high holding voltage for 12-V applications in 0.13-\u00b5m BCD process,\u201d IEEE Trans. Electron Devices <b>68<\/b> (2021) 5020 (DOI: 10.1109\/TED.2021.3073182).","DOI":"10.1109\/TED.2021.3073182"},{"key":"32","unstructured":"[32] M.-D. Ker and S.-F. Hsu: <i>Transient-Induced Latchup in CMOS Integrated Circuits<\/i> (Wiley-IEEE Press, Singapore 2019) 197 (https:\/\/ieeexplore.ieee.org\/servlet\/opac?bknumber=5453758<i><\/i>)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/15\/19_19.20220221\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,13]],"date-time":"2022-08-13T03:14:55Z","timestamp":1660360495000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/15\/19_19.20220221\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,8,10]]},"references-count":32,"journal-issue":{"issue":"15","published-print":{"date-parts":[[2022]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.19.20220221","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,8,10]]},"article-number":"19.20220221"}}