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Chong and P.K. Chan, \u201cA sub-1V transient-enhanced output-capacitorless LDO regulator with push-pull composite power transistor,\u201d IEEE Trans. Very Large Scale Integr. (VLSI) Syst. <b>22<\/b> (2014) 2297 (DOI: 10.1109\/TVLSI.2013.2290702).","DOI":"10.1109\/TVLSI.2013.2290702"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] W.-C. Chen, <i>et al<\/i>.: \u201c94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone,\u201d 2018 IEEE International Solid-State Circuits Conference (ISSCC) (2018) 436 (DOI: 10.1109\/ISSCC.2018.8310371).","DOI":"10.1109\/ISSCC.2018.8310371"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] J. P\u00e9rez-Bail\u00f3n, <i>et al<\/i>.: \u201cAn all-MOS low-power fast-transient 1.2V LDO regulator,\u201d 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (2017) 337 (DOI: 10.1109\/PRIME.2017.7974176).","DOI":"10.1109\/PRIME.2017.7974176"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] H.H. Hammam, <i>et al<\/i>.: \u201cA low power high PSR wide load LDO with load-dependent feedforward cancellation technique,\u201d 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) (2021) 216 (DOI: 10.1109\/MWSCAS47672.2021.9531681).","DOI":"10.1109\/MWSCAS47672.2021.9531681"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] A. Van den Bossche, <i>et al<\/i>.: \u201cMosfets used in ideal diode circuits for Lundell alternator rectifiers,\u201d 2018 Thirteenth International Conference on Ecological Vehicles and Renewable Energies (EVER) (2018) 1 (DOI: 10.1109\/EVER.2018.8362385).","DOI":"10.1109\/EVER.2018.8362385"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] Z. Xu, <i>et al<\/i>.: \u201cAn analysis and experimental approach to MOS controlled diodes behavior,\u201d IEEE Trans. Power Electron. <b>15<\/b> (2000) 916 (DOI: 10.1109\/63.867681).","DOI":"10.1109\/63.867681"},{"key":"7","unstructured":"[7] Datasheet of LT4321, https:\/\/www.analog.com\/media\/en\/technical-documentation\/data-sheets\/4321f.pdf"},{"key":"8","unstructured":"[8] Datasheet of LT4356, https:\/\/www.analog.com\/media\/en\/technical-documentation\/tech-articles\/lt-journal-article\/LTMag-V17N04-08-LT4356-JHerr.pdf"},{"key":"9","unstructured":"[9] Technical document of surge-stoppers, https:\/\/www.analog.com\/media\/en\/technical-documentation\/product-selector-card\/Surge-Stoppers.pdf"},{"key":"10","unstructured":"[10] Texas Instruments: \u201cAutomotive line transient protection circuit,\u201d https:\/\/www.ti.com\/lit\/an\/snva717\/snva717.pdf"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] A. Porzio, <i>et al<\/i>.: \u201cExperimental and 3D simulation study on the role of the parasitic BJT activation in SEB\/SEGR of power MOSFET,\u201d 2005 8th European Conference on Radiation and Its Effects on Components and Systems (2005) PC23 (DOI: 10.1109\/RADECS.2005.4365576).","DOI":"10.1109\/RADECS.2005.4365576"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] K. Endo and K. Nakamae: \u201cTemporally- and spatially-resolved observations of current filament dynamics in insulated gate bipolar transistor chip during avalanche breakdown,\u201d IEEE Trans. Device Mater. Rel. <b>19<\/b> (2019) 723 (DOI: 10.1109\/TDMR.2019.2953197).","DOI":"10.1109\/TDMR.2019.2953197"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] P. Pop, et al.: \u201cReverse polarity protection for automotive NMOS LDO,\u201d 2021 International Semiconductor Conference (CAS) (2021) 235 (DOI: 10.1109\/CAS52836.2021.9604200).","DOI":"10.1109\/CAS52836.2021.9604200"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] H.-P. Hong and J.-C. Wu: \u201cA reverse-voltage protection circuit for MOSFET power switches,\u201d IEEE J. Solid-State Circuits <b>36<\/b> (2001) 152 (DOI: 10.1109\/4.896242).","DOI":"10.1109\/4.896242"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] E. Biagi, <i>et al<\/i>.: \u201cUniversal output stage with reverse polarity protection for automotive applications,\u201d 2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (2014) 929 (DOI: 10.1109\/SPEEDAM.2014.6872110).","DOI":"10.1109\/SPEEDAM.2014.6872110"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] S. Cho, <i>et al<\/i>.: \u201cHighly reliable automotive integrated protection circuit for human body model ESD of +6kV, over voltage, and reverse voltage,\u201d Electronics Letters <b>53<\/b> (2017) 843 (DOI: 10.1049\/el.2017.0780).","DOI":"10.1049\/el.2017.0780"},{"key":"17","unstructured":"[17] M. Puig Vidal, <i>et al<\/i>.: \u201cLatch-up test structures for reliability analysis of a floating well based smart power technology,\u201d ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures (1993) 111 (DOI: 10.1109\/ICMTS.1993.292885)."},{"key":"18","unstructured":"[18] Infineon: app note, \u201cReverse polarit protection for embedded power ICs,\u201d https:\/\/www.infineon.com\/dgdl\/Infineon-Reverse_Polarity_Protection-AN-v01_00-EN.pdf?fileId=5546d46267c74c9a01684be08bf45dfb"},{"key":"19","unstructured":"[19] Infineon: \u201cIntroduction to automotive linear voltage regulator,\u201d https:\/\/www.infineon.com\/dgdl\/Introduction%20to%20Automotive%20Linear%20Voltage%20Regulators%20BR-2014.pdf?fileId=5546d46146d18cb40147440c4569288d"},{"key":"20","unstructured":"[20] H.-C. Chow: \u201cBidirectional buffer for mixed voltage applications,\u201d 1999 IEEE International Symposium on Circuits and Systems (ISCAS) (1999) 270 (DOI: 10.1109\/ISCAS.1999.777855)."},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] E. Bruun, \u201cReverse-voltage protection methods for CMOS circuits,\u201d IEEE J. Solid-State Circuits <b>24<\/b> (1989) 100 (DOI: 10.1109\/4.16309).","DOI":"10.1109\/4.16309"},{"key":"22","unstructured":"[22] F. Scrimizzi, <i>et al<\/i>.: \u201cAutomotive-grade P-channel power MOSFETs for static, dynamic and repetitive reverse polarity protection,\u201d PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (2016) 1."},{"key":"23","unstructured":"[23] K. Sakamoto, <i>et al<\/i>.: \u201cAn intelligent power MOSFET with reverse battery protection for automotive applications,\u201d Proc. 8th International Symposium on Power Semiconductor Devices and ICs (ISPSD\u201996) (1996) 57 (DOI: 10.1109\/ISPSD.1996.509448)."},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] K. Sakamoto, <i>et al<\/i>.: \u201cAn intelligent power IC with reverse battery protection for fast-switching high-side solenoid drive,\u201d IEEE Trans. Electron Devices <b>46<\/b> (1999) 1775 (DOI: 10.1109\/16.777169).","DOI":"10.1109\/16.777169"},{"key":"25","unstructured":"[25] V. Macary, <i>et al<\/i>.: \u201cA novel LDMOS structure with high negative voltage capability for reverse battery protection in automotive IC\u2019s,\u201d Proceedings of the 2000 BIPOLAR\/BiCMOS Circuits and Technology Meeting (Cat. no.00CH37124) (2000) 90 (DOI: 10.1109\/BIPOL.2000.886180)."},{"key":"26","unstructured":"[26] C. Zhou, <i>et al<\/i>.: \u201cSelf-protected GaN power devices with reverse drain blocking and forward current limiting capabilities,\u201d 2010 22nd International Symposium on Power Semiconductor Devices &amp; IC\u2019s (ISPSD) (2010) 343."},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] Y. Shi, <i>et al<\/i>., \u201cA high-performance GaN E-mode reverse blocking MISHEMT with MIS field effect drain for bidirectional switch,\u201d 2017 29th International Symposium on Power Semiconductor Devices and IC\u2019s (ISPSD) (2017) 207 (DOI: 10.23919\/ISPSD.2017.7988924).","DOI":"10.23919\/ISPSD.2017.7988924"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] J. Lei, <i>et al<\/i>.: \u201cReverse-blocking AlGaN\/GaN normally-off MIS-HEMT with double-recessed gated Schottky drain,\u201d 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2018) 276 (DOI: 10.1109\/ISPSD.2018.8393656).","DOI":"10.1109\/ISPSD.2018.8393656"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] S. Mori, <i>et al<\/i>.: \u201cDemonstration of 3kV 4H-SiC reverse blocking MOSFET,\u201d 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2016) 271 (DOI: 10.1109\/ISPSD.2016.7520830).","DOI":"10.1109\/ISPSD.2016.7520830"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] J. Lei, <i>et al<\/i>.: \u201cReverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance,\u201d IEEE Electron Device Lett. <b>39<\/b> (2018) 1003 (DOI: 10.1109\/LED.2018.2832180).","DOI":"10.1109\/LED.2018.2832180"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/19\/19_19.20220347\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,10]],"date-time":"2024-05-10T04:27:48Z","timestamp":1715315268000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/19\/19\/19_19.20220347\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,10,10]]},"references-count":30,"journal-issue":{"issue":"19","published-print":{"date-parts":[[2022]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.19.20220347","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,10,10]]},"article-number":"19.20220347"}}