{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,24]],"date-time":"2024-08-24T04:31:16Z","timestamp":1724473876931},"reference-count":33,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"19","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2023,10,10]]},"DOI":"10.1587\/elex.20.20230307","type":"journal-article","created":{"date-parts":[[2023,8,17]],"date-time":"2023-08-17T22:57:38Z","timestamp":1692313058000},"page":"20230307-20230307","source":"Crossref","is-referenced-by-count":1,"title":["Blade-type phase-change random access memory technology, challenge and prospect"],"prefix":"10.1587","volume":"20","author":[{"given":"Weikun","family":"Xie","sequence":"first","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group"},{"name":"School of Automation Engineering, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lei","family":"Wang","sequence":"additional","affiliation":[{"name":"Nanjing University of Posts and Telecommunications"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Long","family":"Chen","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Houjun","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Automation Engineering, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] H.-S.P. 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