{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,11]],"date-time":"2024-02-11T00:12:05Z","timestamp":1707610325731},"reference-count":37,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2024,2,10]]},"DOI":"10.1587\/elex.20.20230328","type":"journal-article","created":{"date-parts":[[2023,8,21]],"date-time":"2023-08-21T22:51:22Z","timestamp":1692658282000},"page":"20230328-20230328","source":"Crossref","is-referenced-by-count":0,"title":["A high-linearity SP5T SOI switch with a resistive biasing network and capacitance &amp; resistor compensation technology"],"prefix":"10.1587","volume":"21","author":[{"given":"Ruiyang","family":"Zhang","sequence":"first","affiliation":[{"name":"School of Microelectronics, Tianjin University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kaixue","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Tianjin University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haipeng","family":"Fu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Tianjin University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Puhuan","family":"Huang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Tianjin University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] G.A. Akpakwu, <i>et al<\/i>.: \u201cA survey on 5G networks for the internet of things: Communication technologies and challenges,\u201d IEEE Access <b>6<\/b> (2018) 3619 (DOI: 10.1109\/ACCESS.2017.2779844).","DOI":"10.1109\/ACCESS.2017.2779844"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] K. Sakaguchi, <i>et al<\/i>.: \u201cWhere, when, and how mmWave is used in 5G and beyond,\u201d IEICE Trans. Electron. <b>E103-C<\/b> (2017) 790 (DOI: 10.1587\/transele.E100.C.790).","DOI":"10.1587\/transele.E100.C.790"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] D. Choudhury: \u201c5G wireless and millimeter wave technology evolution: An overview,\u201d 2015 IEEE MTT-S International Microw. Symp. (2012) 1 (DOI: 10.1109\/MWSYM.2015.7167093).","DOI":"10.1109\/MWSYM.2015.7167093"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] J. Cui, <i>et al<\/i>.: \u201cMonolithic single-pole sixteen-throw T\/R switch for next-generation front-end module,\u201d IEEE Microw. Wireless Compon. Lett. <b>24<\/b> (2014) 345 (DOI: 10.1109\/LMWC.2014.2309082).","DOI":"10.1109\/LMWC.2014.2309082"},{"key":"5","unstructured":"[5] H. Tosaka, <i>et al<\/i>.: \u201cAn antenna switch MMIC using E\/D mode p-HEMT for GSM\/DCS\/PCS\/WCDMA bands application,\u201d IEEE Radio Frequency Integr. Circuits Symp. (2003) 519 (DOI: 10.1109\/RFIC.2003.1213998)."},{"key":"6","unstructured":"[6] Z. Gu, <i>et al<\/i>.: \u201cLow insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a\/b\/g applications,\u201d 2004 IEEE Radio Frequency Integr. Circuits Symp. (2004) 505 (DOI: 10.1109\/RFIC.2004.1320667)."},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] T. Kim, <i>et al<\/i>.: \u201cHighly linear K-\/Ka-band SPDT switch based on traveling-wave concept in a 150-nm GaN pHEMT process,\u201d IEEE Microw. Wireless Compon. Lett. <b>32<\/b> (2022) 987 (DOI: 10.1109\/LMWC.2022.3161498).","DOI":"10.1109\/LMWC.2022.3161498"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] S. Koya, <i>et al<\/i>.: \u201cDesign and performance of intergate-channel-connected multi-gate pHEMT for antenna switch,\u201d IEICE Trans. Electron. <b>E94-C<\/b> (2011) 1053 (DOI: 10.1587\/transele.E94.C.1053).","DOI":"10.1587\/transele.E94.C.1053"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] D. Kelly, <i>et al<\/i>.: \u201cThe state-of-the-art of silicon-on-sapphire CMOS RF switches,\u201d IEEE Compound Semiconductor Integr. Circuit Symp. (CSICS) (2005) 4 (DOI: 10.1109\/CSICS.2005.1531812).","DOI":"10.1109\/CSICS.2005.1531812"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] X.S. Wang and C.P. Yue: \u201cA dual-band SP6T T\/R switch in SOI CMOS with 37-dBm <i>P<\/i><sub>-0.1dB<\/sub> for GSM\/W-CDMA handsets,\u201d IEEE Trans. Microw. Theory Techn. <b>62<\/b> (2014) 861 (DOI: 10.1109\/TMTT.2014.2308306).","DOI":"10.1109\/TMTT.2014.2308306"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] Z.H. Zhang, <i>et al<\/i>.: \u201cDual SPDT\/SP3T SOI CMOS switch adopting alternative bias strategy with enhanced performance compared to the conventional case,\u201d IEICE Electron. Express <b>13<\/b> (2016) 20160322 (DOI: 10.1587\/elex.13.20160322).","DOI":"10.1587\/elex.13.20160322"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] A.A.S. Abdo, <i>et al<\/i>.: \u201cA low-loss high-linearity SOI SP6T antenna switch using diode biasing method,\u201d IEICE Electron. Express <b>16<\/b> (2019) 20190494 (DOI: 10.1587\/elex.16.20190494).","DOI":"10.1587\/elex.16.20190494"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] V. Kumar, <i>et al<\/i>.: \u201cCommon mode disturbance tolerant broadband differential SPDT switch for Ka-band radar,\u201d IEICE Electron. Express <b>18<\/b> (2021) 20200428 (DOI: 10.1587\/elex.18.20200428).","DOI":"10.1587\/elex.18.20200428"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] M. Ahn, <i>et al<\/i>.: \u201cA high-power CMOS switch using a novel adaptive voltage swing distribution method in multistack FETs,\u201d IEEE Trans. Microw. Theory Techn. <b>56<\/b> (2008) 849 (DOI: 10.1109\/TMTT.2008.919047).","DOI":"10.1109\/TMTT.2008.919047"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] S. Wang and Z. Li: \u201cA 6-32GHz T\/R switch in 0.18-\u00b5m CMOS technology,\u201d IEICE Electron. Express <b>9<\/b> (2012) 590 (DOI: 10.1587\/elex.9.590).","DOI":"10.1587\/elex.9.590"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] F. Gacim and P. Descamps: \u201cAccurate modelling and optimization of inhomogeneous substrate related losses in SPDT switch IC design for WLAN applications,\u201d 2017 IEEE Radio Frequency Integr. Circuits Symp. (RFIC) (2017) 128 (DOI: 10.1109\/RFIC.2017.7969034).","DOI":"10.1109\/RFIC.2017.7969034"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] X. Fu, <i>et al<\/i>.: \u201cA CMOS SPDT RF switch with 68dB isolation and 1.0dB loss feathering switched resonance network for MIMO applications,\u201d IEICE Trans. Electron. <b>E104-C<\/b> (2021) 280 (DOI: 10.1587\/transele.2020CDP0004).","DOI":"10.1587\/transele.2020CDP0004"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] K.K. Tokgoz, <i>et al<\/i>.: \u201cDesign of low-loss 60GHz integrated antenna switch in 65nm CMOS,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180067 (DOI: 10.1587\/elex.15.20180067).","DOI":"10.1587\/elex.15.20180067"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] D. Im and K. Lee: \u201cStacked-FET linear SOI CMOS SPDT antenna switch with input P1dB greater than 40dBm,\u201d IEICE Electron. Express <b>9<\/b> (2012) 1813 (DOI: 10.1587\/elex.9.1813).","DOI":"10.1587\/elex.9.1813"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] C. Tinella, <i>et al<\/i>.: \u201cA high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band,\u201d IEEE J. Solid-State Circuits <b>38<\/b> (2003) 1279 (DOI: 10.1109\/JSSC.2003.813289).","DOI":"10.1109\/JSSC.2003.813289"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] Q. Chaudhry, <i>et al<\/i>.: \u201cA linear CMOS SOI SP14T antenna switch for cellular applications,\u201d 2012 IEEE Radio Frequency Integr. Circuits Symp. (2012) 155 (DOI: 10.1109\/RFIC.2012.6242253).","DOI":"10.1109\/RFIC.2012.6242253"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] B. Yu, <i>et al<\/i>.: \u201cUltra-wideband low-loss switch design in high-resistivity trap-rich SOI with enhanced channel mobility,\u201d IEEE Trans. Microw. Theory Techn. <b>65<\/b> (2017) 3937 (DOI: 10.1109\/TMTT.2017.2696944).","DOI":"10.1109\/TMTT.2017.2696944"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] X.S. Wang, <i>et al<\/i>.: \u201cConcurrent design analysis of high-linearity SP10T switch with 8.5kV ESD protection,\u201d IEEE J. Solid-State Circuits <b>49<\/b> (2014) 1927 (DOI: 10.1109\/JSSC.2014.2331956).","DOI":"10.1109\/JSSC.2014.2331956"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] M. Yeh, <i>et al<\/i>.: \u201cDesign and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance,\u201d IEEE Trans. Microw. Theory Techn. <b>54<\/b> (2006) 31 (DOI: 10.1109\/TMTT.2005.860894).","DOI":"10.1109\/TMTT.2005.860894"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] N.A. Talwalkar, <i>et al<\/i>.: \u201cIntegrated CMOS transmit-receive switch using LC-tuned substrate bias for 2.4-GHz and 5.2-GHz applications,\u201d IEEE J. Solid-State Circuits <b>39<\/b> (2004) 863 (DOI: 10.1109\/JSSC.2004.827809).","DOI":"10.1109\/JSSC.2004.827809"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] H. Kim, <i>et al<\/i>.: \u201cA high power CMOS differential T\/R switch using multi-section impedance transformation technique,\u201d 2010 IEEE Radio Frequency Integr. Circuits Symp. (2010) 483 (DOI: 10.1109\/RFIC.2010.5477353).","DOI":"10.1109\/RFIC.2010.5477353"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] H. Kim, <i>et al<\/i>.: \u201cDesign and analysis of CMOS T\/R switches with the impedance transformation technique,\u201d IEEE Microw. Wireless Compon. Lett. <b>27<\/b> (2017) 1137 (DOI: 10.1109\/LMWC.2017.2758321).","DOI":"10.1109\/LMWC.2017.2758321"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] J. Cha, <i>et al<\/i>.: \u201cA low-power CMOS antenna-switch driver using shared-charge recycling charge pump,\u201d IEEE Trans. Microw. Theory Techn. <b>58<\/b> (2010) 3626 (DOI: 10.1109\/TMTT.2010.2086374).","DOI":"10.1109\/TMTT.2010.2086374"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] D. Im, <i>et al<\/i>.: \u201cA stacked-FET linear SOI CMOS cellular antenna switch with an extremely low-power biasing strategy,\u201d IEEE Trans. Microw. Theory Techn. <b>63<\/b> (2015) 1964 (DOI: 10.1109\/TMTT.2015.2427801).","DOI":"10.1109\/TMTT.2015.2427801"},{"key":"30","unstructured":"[30] Y. Zhu, <i>et al<\/i>.: \u201cAnalytical model of voltage division inside stacked-FET switch,\u201d 2014 Asia-Pacific Microwave Conference (2014) 750."},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] Y. Zhu, <i>et al<\/i>.: \u201cHigh voltage SOI stacked switch with varying periphery FETs,\u201d 2015 Asia-Pacific Microwave Conference (APMC) (2015) 1 (DOI: 10.1109\/APMC.2015.7413448).","DOI":"10.1109\/APMC.2015.7413448"},{"key":"32","doi-asserted-by":"crossref","unstructured":"[32] M. Ahn, <i>et al<\/i>.: \u201cA 1.8-GHz 33-dBm <i>P<\/i><sub>-0.1dB<\/sub> CMOS T\/R switch using stacked FETs with feed-forward capacitors in a floated well structure,\u201d IEEE Trans. Microw. Theory Techn. <b>57<\/b> (2009) 2661 (DOI: 10.1109\/TMTT.2009.2031928).","DOI":"10.1109\/TMTT.2009.2031928"},{"key":"33","doi-asserted-by":"crossref","unstructured":"[33] Z. Zhang, <i>et al<\/i>.: \u201cEnhanced stacked-FETs SOI-CMOS switch biasing strategy for high power applications,\u201d 2019 IEEE Asia-Pacific Microwave Conference (APMC) (2019) 1295 (DOI: 10.1109\/APMC46564.2019.9038418).","DOI":"10.1109\/APMC46564.2019.9038418"},{"key":"34","doi-asserted-by":"crossref","unstructured":"[34] J. Ren, <i>et al<\/i>.: \u201cUniform voltage distribution analysis for high peak voltage antenna tuner switch,\u201d Microw. Opt. Technol. Lett. <b>63<\/b> (2021) 1551 (DOI: 10.1002\/mop.32800).","DOI":"10.1002\/mop.32800"},{"key":"35","doi-asserted-by":"crossref","unstructured":"[35] A. Joseph, <i>et al<\/i>.: \u201cPower handling capability of an SOI RF switch,\u201d 2013 IEEE Radio Frequency Integr. Circuits Symp. (RFIC) (2013) 385 (DOI: 10.1109\/RFIC.2013.6569611).","DOI":"10.1109\/RFIC.2013.6569611"},{"key":"36","doi-asserted-by":"crossref","unstructured":"[36] T. Lee and S. Lee: \u201cModeling of SOI FET for RF switch applications,\u201d 2010 IEEE Radio Frequency Integr. Circuits Symp. (2010) 479 (DOI: 10.1109\/RFIC.2010.5477300).","DOI":"10.1109\/RFIC.2010.5477300"},{"key":"37","doi-asserted-by":"crossref","unstructured":"[37] C. Tinella, <i>et al<\/i>.: \u201c0.13\u00b5m CMOS SOI SP6T antenna switch for multi-standard handsets,\u201d 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2006) 4 (DOI: 10.1109\/SMIC.2005.1587904).","DOI":"10.1109\/SMIC.2005.1587904"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/3\/21_20.20230328\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,2,10]],"date-time":"2024-02-10T03:24:47Z","timestamp":1707535487000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/3\/21_20.20230328\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,2,10]]},"references-count":37,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.20.20230328","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,2,10]]},"article-number":"20.20230328"}}