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Fichtenbaum, <i>et al<\/i>.: \u201cHalf-bridge GaN power ICs: performance and application,\u201d IEEE Power Electron. Mag. <b>4<\/b> (2017) 33 (DOI: 10.1109\/mpel.2017.2719220).","DOI":"10.1109\/MPEL.2017.2719220"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] C. Kuring, <i>et al<\/i>.: \u201cGaN-based multichip half-bridge power module integrated on high-voltage AlN ceramic substrate,\u201d IEEE Trans. Power Electron. <b>37<\/b> (2022) 11896 (DOI: 10.1109\/tpel.2022.3172659).","DOI":"10.1109\/TPEL.2022.3172659"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] L. Sayadi, <i>et al<\/i>.: \u201cThreshold voltage instability in p-GaN gate AlGaN\/GaN HFETs,\u201d IEEE Trans. Electron. Devices <b>65<\/b> (2018) 2454 (DOI: 10.1109\/TED.2018.2828702).","DOI":"10.1109\/TED.2018.2828702"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] M. 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Ly, <i>et al<\/i>.: \u201cA high voltage multi-purpose on-the-fly reconfigurable half-bridge gate driver for GaN HEMTs in 0.18-\u00b5m HV SOI CMOS technology,\u201d IEEE International New Circuits and Systems Conference IEEE (2020) (DOI: 10.1109\/ispsd.2019.8757574).","DOI":"10.1109\/NEWCAS49341.2020.9159781"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] Y. Cheng, <i>et al<\/i>.: \u201cGate reliability of schottky-type p-GaN gate HEMTs under AC positive gate bias stress with a switching drain bias,\u201d IEEE Electron Device Lett. <b>43<\/b> (2022) 1404 (DOI: 10.1109\/LED.2022.3188555).","DOI":"10.1109\/LED.2022.3188555"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] J. 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