{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,12,16]],"date-time":"2023-12-16T05:13:28Z","timestamp":1702703608563},"reference-count":33,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"23","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2023,12,10]]},"DOI":"10.1587\/elex.20.20230360","type":"journal-article","created":{"date-parts":[[2023,10,5]],"date-time":"2023-10-05T22:51:47Z","timestamp":1696546307000},"page":"20230360-20230360","source":"Crossref","is-referenced-by-count":0,"title":["A low-supply-voltage high-power-handling stacked SPDT switch based on feedforward capacitors"],"prefix":"10.1587","volume":"20","author":[{"given":"Jiyang","family":"Shen","sequence":"first","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Li","family":"Li","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chen","family":"Jin","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qingping","family":"Song","sequence":"additional","affiliation":[{"name":"Beijing Institute of Control and Electronic Technology"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kaijiang","family":"Xu","sequence":"additional","affiliation":[{"name":"Aerospace Information Research Institute, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chao","family":"Luo","sequence":"additional","affiliation":[{"name":"Aerospace Information Research Institute, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fuhai","family":"Zhao","sequence":"additional","affiliation":[{"name":"Aerospace Information Research Institute, Chinese Academy of Sciences"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhiyu","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Faxin","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hua","family":"Chen","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] A. Eltaliawy and J.R. Long: \u201cA broadband, mm-wave SPST switch with minimum 50-dB isolation in 45-nm SOI-CMOS,\u201d IEEE Trans. Microw. Theory Techn. <b>69<\/b> (2021) 2899 (DOI: 10.1109\/TMTT.2021.3066977).","DOI":"10.1109\/TMTT.2021.3066977"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] M. Lokhandwala, <i>et al<\/i>.: \u201cA high-power 24-40-GHz transmit-receive front end for phased arrays in 45-nm CMOS SOI,\u201d IEEE Trans. Microw. Theory Techn. <b>68<\/b> (2020) 4775 (DOI: 10.1109\/TMTT.2020.2998011).","DOI":"10.1109\/TMTT.2020.2998011"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] X.S. Wang and C.P. Yue: \u201cA dual-band SP6T T\/R switch in SOI CMOS with 37-dBm P<sub>-0.1dB<\/sub> for GSM\/W-CDMA handsets,\u201d IEEE Trans. Microw. Theory Techn. <b>62<\/b> (2014) 861 (DOI: 10.1109\/TMTT.2014.2308306).","DOI":"10.1109\/TMTT.2014.2308306"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] D. Im and K. Lee: \u201cStacked-FET linear SOI CMOS SPDT antenna switch with input P1dB greater than 40dBm,\u201d IEICE Electron. Express <b>9<\/b> (2012) 1813 (DOI: 10.1587\/elex.9.1813).","DOI":"10.1587\/elex.9.1813"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] Z. Zhang, <i>et al<\/i>.: \u201cDual SPDT\/SP3T SOI CMOS switch adopting alternative bias strategy with enhanced performance compared to the conventional case,\u201d IEICE Electron. Express <b>13<\/b> (2016) 20160322 (DOI: 10.1587\/elex.13.20160322).","DOI":"10.1587\/elex.13.20160322"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] D.P. Nguyen, <i>et al<\/i>.: \u201cA K-band high power and high isolation stacked-FET single pole double throw MMIC switch using resonating capacitor,\u201d IEEE Microw. Wireless Compon. Lett. <b>26<\/b> (2016) 696 (DOI: 10.1109\/LMWC.2016.2597235).","DOI":"10.1109\/LMWC.2016.2597235"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] K.-Y. Lin, <i>et al<\/i>.: \u201cMillimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks,\u201d IEEE Trans. Microw. Theory Techn. <b>51<\/b> (2003) 1076 (DOI: 10.1109\/TMTT.2003.809676).","DOI":"10.1109\/TMTT.2003.809676"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] H.-R. Zhu, <i>et al<\/i>.: \u201cMiniaturized, ultra-wideband and high isolation single pole double throw switch by using \u03c0-type topology in GaAs pHEMT technology,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>68<\/b> (2021) 191 (DOI: 10.1109\/TCSII.2020.3001171).","DOI":"10.1109\/TCSII.2020.3001171"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] K. Hettak, <i>et al<\/i>.: \u201cBroadband high-power GaN SPDT switch using stacked-shunt fets and resonance inductors,\u201d Microwave and Optical Technology Letters <b>55<\/b> (2013) 2093 (DOI: 10.1002\/mop.27788).","DOI":"10.1002\/mop.27788"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] M. Yu, <i>et al<\/i>.: \u201cThe development of a high power SP4T RF switch in GaN HFET technology,\u201d IEEE Microw. Wireless Compon. Lett. <b>17<\/b> (2007) 894 (DOI: 10.1109\/LMWC.2007.910515).","DOI":"10.1109\/LMWC.2007.910515"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] T. Kim, <i>et al<\/i>.: \u201cHighly linear K-\/Ka-band SPDT switch based on traveling-wave concept in a 150-nm GaN pHEMT process,\u201d IEEE Microw. Wireless Compon. Lett. <b>32<\/b> (2022) 987 (DOI: 10.1109\/LMWC.2022.3161498).","DOI":"10.1109\/LMWC.2022.3161498"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] Y.-D. Chen and A. Chin: \u201cHigh-power switch using LC resonator and asymmetric MOS transistor for 5G applications,\u201d IEEE Microw. Wireless Compon. Lett. <b>31<\/b> (2021) 304 (DOI: 10.1109\/LMWC.2020.3047821).","DOI":"10.1109\/LMWC.2020.3047821"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] H.-W. Kim, <i>et al<\/i>.: \u201cDesign and analysis of CMOS T\/R switches with the impedance transformation technique,\u201d IEEE Microw. Wireless Compon. Lett. <b>27<\/b> (2017) 1137 (DOI: 10.1109\/LMWC.2017.2758321).","DOI":"10.1109\/LMWC.2017.2758321"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] Y. Jin and C. Nguyen: \u201cUltra-compact high-linearity high-power fully integrated DC-20-GHz 0.18-\u00b5m CMOS T\/R switch,\u201d IEEE Trans. Microw. Theory Techn. <b>55<\/b> (2007) 30 (DOI: 10.1109\/TMTT.2006.888944).","DOI":"10.1109\/TMTT.2006.888944"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] J. Luo, <i>et al<\/i>.: \u201cA D-band SPST switch using parallel-stripline swap with defected ground structure,\u201d IEICE Electron. Express <b>14<\/b> (2017) 20171104 (DOI: 10.1587\/elex.14.20171104).","DOI":"10.1587\/elex.14.20171104"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] S. Wang and Z.-K. Li: \u201cA 6-32GHz T\/R switch in 0.18-\u00b5m CMOS technology,\u201d IEICE Electron. Express <b>9<\/b> (2012) 590 (DOI: 10.1587\/elex.9.590).","DOI":"10.1587\/elex.9.590"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] K. Miyatbuji and D. Ueda: \u201cA GaAs high power RF single-pole dual throw switch IC for digital-mobile communication system,\u201d IEEE J. Solid-State Circuits <b>30<\/b> (1995) 979 (DOI: 10.1109\/4.406396).","DOI":"10.1109\/4.406396"},{"key":"18","unstructured":"[18] S. Tanata, <i>et al<\/i>.: \u201cA 3V MMIC chip set for 1.9GHz mobile communication systems,\u201d 1995 ISSCC (1995) 144 (DOI: 10.1109\/ISSCC.1995.535467)."},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] H. Alshammary, <i>et al<\/i>.: \u201cA code-domain RF signal processing front end with high self-interference rejection and power handling for simultaneous transmit and receive,\u201d IEEE J. Solid-State Circuits <b>55<\/b> (2020) 1199 (DOI: 10.1109\/JSSC.2019.2960486).","DOI":"10.1109\/JSSC.2019.2960486"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] D. Im, <i>et al<\/i>.: \u201cA stacked-FET linear SOI CMOS cellular antenna switch with an extremely low-power biasing strategy,\u201d IEEE Trans. Microw. Theory Techn. <b>63<\/b> (2015) 1964 (DOI: 10.1109\/TMTT.2015.2427801).","DOI":"10.1109\/TMTT.2015.2427801"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] A.A.S. Abdo, <i>et al<\/i>.: \u201cA low-loss high-linearity SOI SP6T antenna switch using diode biasing method,\u201d IEICE Electron. Express <b>16<\/b> (2019) 20190494 (DOI: 10.1587\/elex.16.20190494).","DOI":"10.1587\/elex.16.20190494"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] M. Ahn, <i>et al<\/i>.: \u201cA high power CMOS switch using substrate body switching in multistack structure,\u201d IEEE Microw. Wireless Compon. Lett. <b>17<\/b> (2007) 682 (DOI: 10.1109\/LMWC.2007.903462).","DOI":"10.1109\/LMWC.2007.903462"},{"key":"23","unstructured":"[23] M. Pourakbar, <i>et al<\/i>.: \u201cDesign and implementation of high power, high linearity stacked RF FET switches in a 250nm silicon on sapphire process,\u201d 2011 APMC (2011) 299."},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] C.S. Levy, <i>et al<\/i>.: \u201cA CMOS SOI stacked shunt switch with sub-500ps time constant and 19-Vpp breakdown,\u201d 2013 IEEE CSICS (2013) 1 (DOI: 10.1109\/CSICS.2013.6659196).","DOI":"10.1109\/CSICS.2013.6659196"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] J. Ren, <i>et al<\/i>.: \u201cUniform voltage distribution analysis for high peak voltage antenna tuner switch,\u201d Microwave and Optical Technology Letter <b>63<\/b> (2021) 1552 (DOI: 10.1002\/mop.32800).","DOI":"10.1002\/mop.32800"},{"key":"26","unstructured":"[26] M. Ahn, <i>et al<\/i>.: \u201c3W SPDT antenna switch design using standard 0.18\u00b5m CMOS process,\u201d 2008 IEEE MTT-S (2008) 555 (DOI: 10.1109\/MWSYM.2008.4633226)."},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] M. Ahn, <i>et al<\/i>.: \u201cA 1.8-GHz 33-dBm P<sub>-0.1dB<\/sub> CMOS T\/R switch using stacked FETs with feed-forward capacitors in a floated well structure,\u201d IEEE Trans. Microw. Theory Techn. <b>57<\/b> (2009) 2661 (DOI: 10.1109\/TMTT.2009.2031928).","DOI":"10.1109\/TMTT.2009.2031928"},{"key":"28","unstructured":"[28] S. Koya, <i>et al<\/i>.: \u201cIntergate-channel-connected multi-gate PHEMT devices for antenna switch applications,\u201d 2008 IEEE MTT-S (2008) 1287 (DOI: 10.1109\/MWSYM.2008.4633295)."},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] C. Hill, <i>et al<\/i>.: \u201cRF watt-level low-insertion-loss high-bandwidth SOI CMOS switches,\u201d IEEE Trans. Microw. Theory Techn. <b>66<\/b> (2018) 5724 (DOI: 10.1109\/TMTT.2018.2876825).","DOI":"10.1109\/TMTT.2018.2876825"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] V.N.K. Malladi and M. Miller: \u201cA 48dBm peak power RF switch in SOI process for 5G mMIMO applications,\u201d 2019 IEEE TMSMIC (2019) 1 (DOI: 10.1109\/SIRF.2019.8709096).","DOI":"10.1109\/SIRF.2019.8709096"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] J. Kwon, <i>et al<\/i>.: \u201cSub-6GHz GaAs pHEMT SPDT switch with low insertion loss and high power handling capability using dual-gate technique,\u201d 2023 IEEE WAMICON (2023) 49 (DOI: 10.1109\/WAMICON57636.2023.10124891).","DOI":"10.1109\/WAMICON57636.2023.10124891"},{"key":"32","doi-asserted-by":"crossref","unstructured":"[32] V.N.K. Malladi, <i>et al<\/i>.: \u201cA 2-6GHz, 45dBm peak power T\/R SPDT switch for 5G mMIMO applications,\u201d 2018 IEEE BCICTS (2018) 89 (DOI: 10.1109\/BCICTS.2018.8551151).","DOI":"10.1109\/BCICTS.2018.8551151"},{"key":"33","doi-asserted-by":"crossref","unstructured":"[33] F. Thome and O. Ambacher: \u201cHighly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330GHz,\u201d IEEE Trans. Microw. Theory Techn. <b>66<\/b> (2018) 1998 (DOI: 10.1109\/TMTT.2017.2777980).","DOI":"10.1109\/TMTT.2017.2777980"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/20\/23\/20_20.20230360\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,12,16]],"date-time":"2023-12-16T03:18:41Z","timestamp":1702696721000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/20\/23\/20_20.20230360\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,12,10]]},"references-count":33,"journal-issue":{"issue":"23","published-print":{"date-parts":[[2023]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.20.20230360","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,12,10]]},"article-number":"20.20230360"}}