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Galib, <i>et al.<\/i>: \u201cSupply voltage decision methodology to minimize SRAM standby power under radiation environment,\u201d IEEE Trans. Nucl. Sci. <b>62<\/b> (2015) 1349 (DOI: 10.1109\/TNS.2015.2420094).","DOI":"10.1109\/TNS.2015.2420094"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] H. Jeong, <i>et al.<\/i>: \u201cTrip-point bit-line precharge sensing scheme for single-ended SRAM,\u201d IEEE Trans. Very Large Scale Integr. (VLSI) Syst. <b>23<\/b> (2015) 1370 (DOI: 10.1109\/TVLSI.2014.2337958).","DOI":"10.1109\/TVLSI.2014.2337958"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] N. Maroof and B.-S. Kong: \u201c10T SRAM using half-<i>V<sub>DD<\/sub><\/i> precharge and row-wise dynamically powered read port for low switching power and ultralow RBL leakage,\u201d IEEE Trans. Very Large Scale Integr. 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